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Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications
25/25 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 25 checked references that resolve
resolves10.1117/1.NPh.4.1.011014
Infrared imaging: a potential powerful tool for neuroimaging and neurodiagnostics
resolves10.1117/1.JMM.16.3.034504
Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application
resolves10.1016/S1350-4495(02)00227-X
A two-stack, multi-color quantum well infrared photodetector for mid- and long-wavelength infrared detection
resolves10.1063/1.1592315
Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP
resolves10.1063/1.4769038
Room temperature continuous wave operation of λ <b>∼</b> 3–3.2 μm quantum cascade lasers
resolves10.1002/pssb.200880501
Evidence of carrier leakage into the L‐valley in InAs‐based quantum cascade lasers under high hydrostatic pressure
resolves10.1016/j.jcrysgro.2014.12.021
Strain compensated CdSe/ZnSe/ZnCdMgSe quantum wells as building blocks for near to mid-IR intersubband devices
resolves10.1002/pssc.201510257
Growth and characterization of ZnCdSe/ZnCdMgSe two‐color quantum well infrared photodetectors
resolves10.1109/JSTQE.2008.920317
Interband and Intersubband Optical Properties of Doped n-$\hbox{Zn}_{\bf 0.46}\hbox{Cd}_{\bf 0.54}\hbox{Se/Zn}_{\bf 0.24}\hbox{Cd}_{\bf 0.25}\hbox{Mg}_{\bf 0.51}\hbox{Se}$ Multiple Quantum Wells for Intersubband Device Applications
resolves10.1116/1.2723761
Study of intersubband transitions of ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications
resolves10.1116/1.1878992
Optical characterization and evaluation of the conduction band offset for ZnCdSe∕ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy
resolves10.1103/PhysRevB.50.8663
Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells
resolves10.1088/0022-3727/49/11/115111
MgSe/CdSe coupled quantum wells with optimized MgSe coupling layer thickness and near infrared intersubband absorption around 1.55 μm
resolves10.1111/jmi.12983
Comparing Xe<sup>+</sup>pFIB and Ga<sup>+</sup>FIB for TEM sample preparation of Al alloys: Minimising FIB‐induced artefacts
resolves10.1038/s41598-020-66564-y
Effect of Ion Irradiation Introduced by Focused Ion-Beam Milling on the Mechanical Behaviour of Sub-Micron-Sized Samples
resolves10.1016/j.ultramic.2020.113135
An in-situ method for protecting internal cracks/pores from ion beam damage and reducing curtaining for TEM sample preparation using FIB
resolves10.1002/pssa.200881405
Use of contactless electroreflectance in the development of quantum cascade lasers from ZnCdSe/ZnCdMgSe
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