Reference health
Scaling carbon nanotube complementary transistors to 5-nm gate lengths
37/37 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
10 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 37 checked references that resolve
resolves10.1021/nl0717107
Doping-Free Fabrication of Carbon Nanotube Based Ballistic CMOS Devices and Circuits
resolves10.1021/nl049222b
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
resolves10.1021/nl8018802
Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage
resolves10.1109/TNANO.2008.2006903
Circuit-Level Performance Benchmarking and Scalability Analysis of Carbon Nanotube Transistor Circuits
resolves10.1021/nn506806b
Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio
resolves10.1109/TNANO.2005.851402
Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors
resolves10.1109/TED.2015.2457424
A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part II: Extrinsic Elements, Performance Assessment, and Design Optimization
resolves10.1088/0957-4484/17/18/029
Properties of short channel ballistic carbon nanotube transistors with ohmic contacts
resolves10.1021/nn301302n
Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts
resolves10.1021/nn305277d
Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes
resolves10.1109/TNANO.2004.842073
Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
resolves10.1021/nn5024363
Defining and Overcoming the Contact Resistance Challenge in Scaled Carbon Nanotube Transistors
resolves10.1126/science.aac8006
End-bonded contacts for carbon nanotube transistors with low, size-independent resistance
resolves10.1021/nl9025488
Alignment Controlled Growth of Single-Walled Carbon Nanotubes on Quartz Substrates
resolves10.1021/nn400847r
T-Gate Aligned Nanotube Radio Frequency Transistors and Circuits with Superior Performance
resolves10.1021/nl100022u
Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics
The 10 references without a DOI — listed, not checked
no DOI — not checkedW. M. Holt in IEEE International Solid-State Circuits Conference (ISSCC) 2016 IEEE International (IEEE 2016); 10.1109/ISSCC.2016.7417888.
no DOI — not checkedK. J. Kuhn et al . in Electron Devices Meeting (IEDM) 2012 IEEE International (IEEE 2012); 10.1109/IEDM.2012.6479001.
no DOI — not checkedM. Luisier et al . in International Electron Devices Meeting (IEDM) 2012 IEEE International (IEEE 2012); 10.1109/IEDM.2011.6131531.
no DOI — not checkedA. D. Franklin et al . in International Electron Devices Meeting (IEDM) 2012 IEEE International (IEEE 2012); 10.1109/IEDM.2012.6478979.
no DOI — not checkedS. Natarajan et al . in International Electron Devices Meeting (IEDM) 2014 IEEE International (IEEE 2014); 10.1109/IEDM.2014.7046976.
no DOI — not checkedC. Auth et al . in Symposium on VLSI Technology 2012 IEEE International (IEEE 2012); 10.1109/VLSIT.2012.6242496.
no DOI — not checkedS. Migita et al . in International Electron Devices Meeting (IEDM) 2012 IEEE International (IEEE 2012); 10.1109/IEDM.2012.6479006.
no DOI — not checkedH. Lee et al . in Symposium on VLSI Technology 2006 IEEE International (IEEE 2006); 10.1109/VLSIT.2006.1705215.
no DOI — not checkedB. Yu et al . in 2002 IEEE International (IEEE 2002); 10.1109/IEDM.2002.1175825.
no DOI — not checkedInternational Technology Roadmap for Semiconductors (2013 edition); www.itrs2.net/2013-itrs.html.
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