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Discovery of III–V Semiconductors: Physical Properties and Application
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The 56 checked references that resolve
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Die Diffusionskoeffizienten von Antimon und Arsen in Germanium bei verschiedenen Konzentrationen und die Diffusion bestimmter Störstellenprofile durch Programmdiffusion
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Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology
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Middle-infrared chalcogenide glass fibers with losses lower than 100 db km−1
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Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Operating principle and semiconductor selection
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Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verification
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In1−<i>x</i>Ga<i>x</i>As-GaSb1−<i>y</i>As<i>y</i> heterojunctions by molecular beam epitaxy
resolves10.1134/S1063782607020091
Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system
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Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of composition
resolves10.1134/1.1331795
Type II broken-gap InAs/GaIn0.17As0.22Sb heterostructures with abrupt planar interface
resolves10.1088/0268-1242/19/10/R03
Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions
resolves10.1134/1.1187965
Magnetotransport in a semimetal channel in p-Ga1−x
InxAsySb1−y
/p-InAs heterostructures with various compositions of the solid solution
resolves10.1002/pssa.200306295
Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
resolves10.1016/j.jmmm.2008.11.032
Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
resolves10.1103/PhysRevLett.107.136603
Evidence for Helical Edge Modes in Inverted<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>InAs</mml:mi><mml:mo>/</mml:mo><mml:mi>GaSb</mml:mi></mml:math>Quantum Wells
resolves10.1049/ip-opt:20020348
Type II GaSb based photodiodes operating in spectral range 1.5–4.8 µm at room temperature
resolves10.1109/3.7106
Carrier dynamics and recombination mechanisms in staggered-alignment heterostructures
resolves10.1134/1.1601668
High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring
resolves10.1134/1.1359816
High-efficiency 3.4–4.4 μm light-emitting diodes based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure operating at room temperature
resolves10.1016/j.vibspec.2009.08.001
Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs
resolves10.1134/S1063782610010100
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
resolves10.1117/12.723507
Optoelectronic sensors on GaSb- and InAs-based heterostructures for ecological monitoring and medical diagnostics
resolves10.1134/S1063784210020167
Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 μm) optron consisting of an LED array and a wideband photodiode
resolves10.1117/12.742322
<title>High-speed photodiodes for 2.0-4.0 μm spectral range</title>
resolves10.1134/S1063782609080259
Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate
resolves10.1016/j.jcrysgro.2010.10.144
Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
resolves10.1134/S1063782617080310
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
resolves10.1134/S1063782614060220
On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate
resolves10.1134/S1063782614070197
High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in n-InAs matrix
resolves10.1134/S1063782613010144
Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers
resolves10.1063/1.4739279
Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells
resolves10.1134/S1063782616060038
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers
resolves10.1117/1.JNP.10.046013
Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells
resolves10.1134/S1063782617100141
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field
resolves10.1016/j.jcrysgro.2016.11.079
InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy
resolves10.1063/1.1577834
A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
resolves10.1134/1.1601656
Rare-earth elements in the technology of III–V compounds and devices based on these compounds
resolves10.1134/1.1405894
Terahertz injection electroluminescence in multiperiod quantum-cascade AlGaAs/GaAs structures
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