Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 153 checked references that resolve
resolves10.1103/PhysRev.140.A536Optical Absorption of a Few Unit-Cell Layers of Mo<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1073/pnas.1405435111Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
resolves10.1039/C399200013861T-MoS
<sub>2</sub>
, a new metallic modification of molybdenum disulfide
resolves10.1103/PhysRevB.44.3955Raman study and lattice dynamics of single molecular layers of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevB.5.895Superconductivity and Magnetoresistance in Nb<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1080/00018737500101391Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides
resolves10.1143/JPSJ.51.219Electrical Transport Properties in 2<i>H</i>-NbS<sub>2</sub>, -NbSe<sub>2</sub>, -TaS<sub>2</sub> and -TaSe<sub>2</sub>
resolves10.1039/c3nr00723eLarge-scale synthesis of NbS2 nanosheets with controlled orientation on graphene by ambient pressure CVD
resolves10.1103/PhysRevLett.105.136805Atomically Thin
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
<mml:msub>
<mml:mi>MoS</mml:mi>
<mml:mn>2</mml:mn>
</mml:msub>
</mml:math>
: A New Direct-Gap Semiconductor
resolves10.1038/nnano.2013.277Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
resolves10.1103/PhysRevLett.111.216805Optical Spectrum of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>: Many-Body Effects and Diversity of Exciton States
resolves10.1103/PhysRevB.88.045412Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevLett.108.196802Coupled Spin and Valley Physics in Monolayers of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>and Other Group-VI Dichalcogenides
resolves10.1103/PhysRevB.84.153402Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
resolves10.1038/srep04215New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides
resolves10.1021/nl5014597Probing the Interlayer Coupling of Twisted Bilayer MoS<sub>2</sub> Using Photoluminescence Spectroscopy
resolves10.1038/nmat4091Vertical and in-plane heterostructures from WS2/MoS2 monolayers
resolves10.1021/nl303583vHigh Performance Multilayer MoS<sub>2</sub> Transistors with Scandium Contacts
resolves10.1021/nn403248yFabrication and Transfer of Flexible Few-Layers MoS<sub>2</sub> Thin Film Transistors to Any Arbitrary Substrate
resolves10.1103/PhysRevB.88.115145Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>T</mml:mi></mml:math>-TaS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mi>x</mml:mi></mml:msub></mml:math>
resolves10.1063/1.4805003Superconductivity induced by Se-doping in layered charge-density-wave system 1<i>T</i>-TaS2−<i>x</i>Se<i>x</i>
resolves10.1557/PROC-140-277Synthesis and Characterization of MoS<sub>2</sub> Thin Films Grown by Pulsed Laser Evaporation
resolves10.1021/ja051654gPorous MoS<sub>2</sub> Synthesized by Ultrasonic Spray Pyrolysis
resolves10.1007/BF02652388Lubrication with sputtered MoS2 films: Principles,operation, and limitations
resolves10.1007/BF01106824Thin films of molybdenum and tungsten disulphides by metal organic chemical vapour deposition
resolves10.1149/1.2221182Synthesis of MoS2 Thin Film by Chemical Vapor Deposition Method and Discharge Characteristics as a Cathode of the Lithium Secondary Battery
resolves10.1021/nl2043612Growth of Large-Area and Highly Crystalline MoS<sub>2</sub> Thin Layers on Insulating Substrates
resolves10.1038/nmat4061Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
resolves10.1021/nl3026357Extraordinary Room-Temperature Photoluminescence in Triangular WS<sub>2</sub> Monolayers
resolves10.1002/adma.201104798Synthesis of Large‐Area MoS<sub>2</sub> Atomic Layers with Chemical Vapor Deposition
resolves10.1038/srep01866Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films
resolves10.1038/nature11408Graphene and boron nitride lateral heterostructures for atomically thin circuitry
resolves10.1063/1.4893961Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry
resolves10.1021/nl301061bArtificially Stacked Atomic Layers: Toward New van der Waals Solids
resolves10.1021/nn501723yField-Effect Transistors Built from All Two-Dimensional Material Components
resolves10.1038/nmat3386Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
resolves10.1063/1.4709732Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer
resolves10.1021/nl200464jDirect Growth of Graphene/Hexagonal Boron Nitride Stacked Layers
resolves10.1021/nl204562jvan der Waals Epitaxy of MoS<sub>2</sub> Layers Using Graphene As Growth Templates
resolves10.1038/ncomms5541Low-density three-dimensional foam using self-reinforced hybrid two-dimensional atomic layers
resolves10.1007/BF01671439Growth conditions and structural characterization of MoSexTe2−x(0 ⩽x ⩽ 2) single crystals
resolves10.1007/BF00539953Synthesis and characterization of molybdenum-tungsten mixed sulphoselenide, Mo0.5W0.5S x Se2?x (0 ? x ? 2)
resolves10.1038/nmat4064Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
resolves10.1063/1.4895469Facile synthesis of MoS2 and MoxW1-xS2 triangular monolayers
resolves10.1002/adma.201306095Growth of Large‐Area 2D MoS<sub>2(1‐<i>x</i>)</sub>Se<sub>2<i>x</i></sub> Semiconductor Alloys
resolves10.1021/nl4032296Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide
resolves10.1103/PhysRevB.88.195313Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1364/OE.21.004908Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
resolves10.1038/srep01755Identification of individual and few layers of WS2 using Raman Spectroscopy
resolves10.1103/PhysRevB.87.115413Raman spectroscopy of shear and layer breathing modes in multilayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1021/nn504088gExcited Excitonic States in 1L, 2L, 3L, and Bulk WSe<sub>2</sub> Observed by Resonant Raman Spectroscopy
resolves10.1063/1.4793203Cross-plane thermal properties of transition metal dichalcogenides
resolves10.1039/C3CP53746CThermal anisotropy in nano-crystalline MoS
<sub>2</sub>
thin films
resolves10.1063/1.4732522Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
resolves10.1063/1.4824893Sulfur vacancies in monolayer MoS2 and its electrical contacts
resolves10.1021/nl4043505MoS<sub>2</sub> P-type Transistors and Diodes Enabled by High Work Function MoO<sub><i>x</i></sub> Contacts
resolves10.1021/nn406603hToward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides
resolves10.1021/nl501275pHigh Mobility WSe<sub>2</sub> p<i>-</i> and n<i>-</i>Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
resolves10.1021/nl5009037All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor
resolves10.1038/nmat4080Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
resolves10.1063/1.4768218Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
resolves10.1021/nn501013cField-Effect Transistors Based on Few-Layered α-MoTe<sub>2</sub>
resolves10.1063/1.4820408WSe2 field effect transistors with enhanced ambipolar characteristics
resolves10.1063/1.4894426High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
resolves10.1021/nl304777eRole of Metal Contacts in Designing High-Performance Monolayer n-Type WSe<sub>2</sub> Field Effect Transistors
resolves10.1142/S1793292012500373HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE
resolves10.1021/nn405037sExtraordinary Photoresponse in Two-Dimensional In<sub>2</sub>Se<sub>3</sub> Nanosheets
resolves10.1021/nn501226zPhosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
resolves10.1021/nn402954eFlexible and Transparent MoS<sub>2</sub> Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
resolves10.1002/adma.201402008Interface Engineering for High‐Performance Top‐Gated MoS<sub>2</sub> Field‐Effect Transistors
resolves10.1021/nl302015vIntegrated Circuits Based on Bilayer MoS<sub>2</sub> Transistors
resolves10.1021/nl404795zGraphene/MoS<sub>2</sub> Hybrid Technology for Large-Scale Two-Dimensional Electronics
resolves10.1021/nn5009929High-Gain Inverters Based on WSe<sub>2</sub> Complementary Field-Effect Transistors
resolves10.1063/1.4859655A small-signal generator based on a multi-layer graphene/molybdenum disulfide heterojunction
resolves10.1002/smll.201401872Floating Gate Memory-based Monolayer MoS<sub>2</sub>Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics
resolves10.1063/1.4817409Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
resolves10.1038/nnano.2012.224Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
resolves10.1021/nl301335qHighly Flexible MoS<sub>2</sub> Thin-Film Transistors with Ion Gel Dielectrics
resolves10.1002/smll.201302081Functionalized MoS<sub>2</sub> Nanosheet‐Based Field‐Effect Biosensor for Label‐Free Sensitive Detection of Cancer Marker Proteins in Solution
resolves10.1038/srep05209Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes
resolves10.1063/1.4862745Enhancing the photocurrent and photoluminescence of single crystal monolayer MoS<sub>2</sub> with resonant plasmonic nanoshells
resolves10.1021/nn500532fStrong Photoluminescence Enhancement of MoS<sub>2</sub> through Defect Engineering and Oxygen Bonding
resolves10.1021/nl403036hTunable Photoluminescence of Monolayer MoS<sub>2</sub> via Chemical Doping
resolves10.1021/nn4041987Electrochemical Control of Photoluminescence in Two-Dimensional MoS<sub>2</sub> Nanoflakes
resolves10.1021/nn303973rExciton Dynamics in Suspended Monolayer and Few-Layer MoS<sub>2</sub> 2D Crystals
resolves10.1038/nnano.2013.206Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
resolves10.1038/nnano.2014.25Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
resolves10.1038/nnano.2014.26Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
resolves10.1038/nnano.2013.219Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
resolves10.1126/science.1141483Identification of Active Edge Sites for Electrochemical H
<sub>2</sub>
Evolution from MoS
<sub>2</sub>
Nanocatalysts
resolves10.1038/nchem.1589The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
resolves10.1021/ja0504690Biomimetic Hydrogen Evolution: MoS<sub>2</sub>Nanoparticles as Catalyst for Hydrogen Evolution
resolves10.1038/nmat3439Engineering the surface structure of MoS2 to preferentially expose active edge sites for electrocatalysis
resolves10.1021/nl2020476Core–shell MoO<sub>3</sub>–MoS<sub>2</sub> Nanowires for Hydrogen Evolution: A Functional Design for Electrocatalytic Materials
resolves10.1038/ncomms2472Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets
resolves10.1039/C3EE42620CGrowth of noble metal nanoparticles on single-layer TiS
<sub>2</sub>
and TaS
<sub>2</sub>
nanosheets for hydrogen evolution reaction
resolves10.1021/nn501479eMoS<sub>2</sub> Quantum Dot-Interspersed Exfoliated MoS<sub>2</sub> Nanosheets
resolves10.1073/pnas.1316792110Electrochemical tuning of vertically aligned MoS
<sub>2</sub>
nanofilms and its application in improving hydrogen evolution reaction
checked 2026-07-23 — re-checked daily as this page is visited;
titles and statuses come from Crossref and DataCite and are not part of the signed record
Both snippets point at the live badge image and link back to this page. The
badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.