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ITO as a Diffusion Barrier Between Si and Cu

21/21 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 21 checked references that resolve

resolves10.1103/PhysRevB.44.12742

Copper passivation of boron in silicon and boron reactivation kinetics

resolves10.1149/1.1421348

Physics of Copper in Silicon

resolves10.1016/S0167-9317(97)00091-9

Advanced materials for future interconnections of the future need and strategy

resolves10.1063/1.111875

Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W)

resolves10.1063/1.349594

Tantalum-based diffusion barriers in Si/Cu VLSI metallizations

resolves10.1016/S0040-6090(96)08553-7

WNx diffusion barriers between Si and Cu

resolves10.1016/0169-4332(96)00464-3

Diffusion barrier property of TaN between Si and Cu

resolves10.1063/1.347059

Reactively sputtered TiN as a diffusion barrier between Cu and Si

resolves10.1007/s003390050539

Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

resolves10.1063/1.369172

Barrier properties and failure mechanism of Ta–Si–N thin films for Cu interconnection

resolves10.1016/S0169-4332(03)00871-7

Characteristics of sputtered TaBx thin films as diffusion barriers between copper and silicon

resolves10.1063/1.366346

Nanostructured Ta-Si-N diffusion barriers for Cu metallization

resolves10.1063/1.1468904

Diffusion barrier properties of amorphous TiB2 for application in Cu metallization

resolves10.1016/S0040-6090(02)00163-3

Transparent and conducting ITO films: new developments and applications

resolves10.1016/S0040-6090(97)00526-9

Electrical, optical and structural characteristics of indium-tin-oxide thin films deposited on glass and polymer substrates

resolves10.1016/S0040-6090(99)00094-2

Application of ITO films to photocatalysis

resolves10.1016/S0040-6090(96)08865-7

Preparation and piezoresistive properties of reactively sputtered indium tin oxide thin films

resolves10.1016/j.vacuum.2004.01.081

Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering

resolves10.1149/1.1393462

Diffusion Barrier Properties of Sputtered TiB[sub 2] Between Cu and Si

resolves10.1063/1.1509102

Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon

resolves10.1016/S0040-6090(03)01384-1

Investigation on diffusion barrier properties of reactive sputter deposited TiAl N O thin films for Cu metallization

The 2 references without a DOI — listed, not checked

no DOI — not checked10.1149/1.1860511_r1

no DOI — not checkedS. P. Murarka, I. V. Verner, and R. J. Gutmann,Fundametal Mechanisms for Microelectronic Application, John Wiley & Sons, New York (2000).

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

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