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Effect of Surface Reactive Site Density and Reactivity on the Growth of Atomic Layer Deposited WN[sub x]C[sub y] Films
31/31 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 31 checked references that resolve
resolves10.1016/0040-6090(93)90680-N
Advanced multilayer metallization schemes with copper as interconnection metal
resolves10.1063/1.1940727
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
resolves10.1063/1.1585111
Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization
resolves10.1149/1.1652054
Characterization of Atomic Layer Deposited WN[sub x]C[sub y] Thin Film as a Diffusion Barrier for Copper Metallization
resolves10.1063/1.1631070
Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films
resolves10.1063/1.1810193
Island growth as a growth mode in atomic layer deposition: A phenomenological model
resolves10.1063/1.1787624
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
resolves10.1063/1.2182074
The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNxCy films
resolves10.1016/0169-4332(89)90552-7
Some considerations of the thermodynamics and kinetics of the chemical vapour deposition of tungsten
resolves10.1021/j100121a040
An IR and NMR study of the chemisorption of titanium tetrachloride on silica
resolves10.1021/ja00350a003
Solid-state NMR studies of the reactions of silica surfaces with polyfunctional chloromethylsilanes and ethoxymethylsilanes
resolves10.1143/JJAP.29.L2401
Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical Treatments
resolves10.1063/1.346669
The study of the thermal oxide films on silicon wafers by Fourier transform infrared attenuated total reflection spectroscopy
resolves10.1063/1.336651
Hydrogen in low-pressure chemical-vapor-deposited silicon (oxy)nitride films
resolves10.1103/PhysRevB.48.5444
Dynamic behavior of hydrogen in silicon nitride and oxynitride films made by low-pressure chemical vapor deposition
resolves10.1016/0040-6090(90)90217-2
Oxidation of silicon (oxy)nitride and nitridation of silicon dioxide: Manifestations of the same chemical reaction system?
resolves10.1063/1.1874301
Interface characterization of nanoscale laminate structures on dense dielectric substrates by x-ray reflectivity
resolves10.1002/1521-3862(20020704)8:4<149::AID-CVDE149>3.0.CO;2-F
Diffusion Barrier Deposition on a Copper Surface by Atomic Layer Deposition
The 7 references without a DOI — listed, not checked
no DOI — not checkedS. Smith, G. Book, W. M. Li, Y. M. Sun, P. Gillespie, M. Tuominen, and K. Pfeifer , in
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no DOI — not checkedhttp://public.itrs.net/
no DOI — not checkedW-M. Li, K. Elers, J. Kostamo, S. Kaipio, H. Huotari, M. Soininen, P. J. Soininen, M. Tuominen, S. Haukka, S. Smith, and W. Besling , in
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no DOI — not checkedS. Haukka, M. Tuominen, E. Vainonen-Ahlgren, E. Tois, W. M. Li, and J. W. Maes , in
Advanced Short-Time Thermal Processing for Si-Based CMOS Devices
, F. Roozeboom, E. Gusev, L.-J. Chen, M.C. Ozturk, D.-L. Kwong, and P. Timans, Editors, PV 2003-14, p. 405, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).
no DOI — not checked10.1149/1.2203239_r25
no DOI — not checkedM. R. Baklanov, D. G. Shamiryan, G. P. Beyer, T. Conrad, S. Vanhaelemeersch, and K. Maex , in
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no DOI — not checkedM. R. Baklanov, T. Conrad, F. Lanckmans, S. Vanhaelemeersch, D. Holmes, and K. Maex , in
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