Reference health
Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GST
30/30 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
6 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 30 checked references that resolve
resolves10.1143/JJAP.39.745
Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Thin Films
resolves10.1143/JJAP.32.5241
Completely Erasable Phase Change Optical Disc II: Application of Ag-In-Sb-Te Mixed-Phase System for Rewritable Compact Disc Compatible with CD-Velocity and Double CD-Velocity
resolves10.1063/1.1604172
Te-free, Sb-based phase-change materials for high-speed rewritable optical recording
resolves10.1109/TED.2008.2010568
Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell
resolves10.1149/1.2409482
Phase-Change Behavior of Stoichiometric Ge[sub 2]Sb[sub 2]Te[sub 5] in Phase-Change Random Access Memory
resolves10.1063/1.2821845
Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling
resolves10.1063/1.3127223
Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices
resolves10.1149/1.3137056
Change of Damage Mechanism by the Frequency of Applied Pulsed DC in the Ge[sub 2]Sb[sub 2]Te[sub 5] Line
resolves10.1063/1.3184584
Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field
resolves10.1109/IEDM.2010.5703444
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
resolves10.1109/IEDM.2010.5703440
The impact of hole-induced electromigration on the cycling endurance of phase change memory
resolves10.1146/annurev.physchem.56.092503.141307
REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation and Functionalization
resolves10.1016/j.apsusc.2004.03.129
Ti diffusion in chalcogenides: a ToF-SIMS depth profile characterization approach
resolves10.1063/1.2450656
Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack
resolves10.1016/j.mee.2008.09.009
Thermal stress effects of Ge2Sb2Te5 phase change material: Irreversible modification with Ti adhesion layers and segregation of Te
resolves10.1016/0040-6031(84)87142-7
Phase diagram of the ternary system GeSbTe. I. The subternary GeTeSb2Te3Te
resolves10.1063/1.3183952
Characterization of phase change memory materials using phase change bridge devices
resolves10.1126/science.1177483
Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid
resolves10.1063/1.348620
Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory
resolves10.1063/1.3357379
The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5
resolves10.1063/1.2719148
Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress
The 6 references without a DOI — listed, not checked
no DOI — not checkedS. Lai , Tech. Dig. - Int. Electron Devices Meet., 2008, pp. 10.1.1–10.1.4.
no DOI — not checkedC. Jeong, S. Ahn, Y. Hwang, Y. Song, J. Oh, S. Lee, S. Lee, K. Ryoo, J. Park, J. Shin, et al. , in IEEE Nonvolatile Semiconductor Memory Workshop, pp. 28–29 (2004).
no DOI — not checkedK. Kim and S. J. Ahn , “Reliability investigations for manufacturable high density PRAM,”IEEE International Reliability Physics Symposium, pp. 157–162, (2005).
no DOI — not checkedI. Kim, S. Cho, D. Im, E. Cho, D. Kim, G. Oh, D. Ahn, S. Park, S. Nam, J. Moon, et al. , inSymposium on VLSI Technology, 2010, p. T19.3.
no DOI — not checkedA. Padilla, G. W. Burr, C. T. Rettner, T. Topuria, P. M. Rice, B. Jackson, K. Virwani, A. J. Kellock, D. Dupouy, A. Debunne, et al. , J. Appl. Phys., accepted.
no DOI — not checkedK. D. Childs, B. A. Carlson, L. A. LaVanier, J. F. Moulder, D. F. Paul, W. F. Stickle, and D. G. Watson ,Handbook of Auger Electron Spectroscopy, Physical Electronics, Inc., (1995).
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