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XPS Analysis of AuGeNi/Cleaved GaAs(110) Interface

https://doi.org/10.1155/2016/7574526
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17/17 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 17 checked references that resolve
resolves10.1016/s0040-6090(97)00439-2
A survey of ohmic contacts to III-V compound semiconductors
resolves10.1016/S1468-6996(01)00150-4
Development of refractory ohmic contact materials for gallium arsenide compound semiconductors
resolves10.1088/0268-1242/23/2/025019
Ohmic contacts to pseudomorphic HEMTs with low contact resistance due to enhanced Ge penetration through AlGaAs layers
resolves10.1016/0040-6090(87)90283-5
In situ X-ray diffraction study of the effects of germanium and nickel concentrations on melting in gold-based contacts to gallium arsenide
resolves10.1063/1.332011
Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs
resolves10.1016/0169-4332(93)90241-3
Characterisation of TiN coatings and of the TiN/Si interface by X-ray photoelectron spectroscopy and Auger electron spectroscopy
resolves10.1016/0021-9517(79)90237-9
The extent of charge localization on oxygen ions and catalytic activity on solid state oxides in allylic oxidation of propylene
resolves10.1116/1.571450
An XPS study of the oxidation of AlAs thin films grown by MBE
resolves10.1016/0169-4332(91)90063-p
XPS valence band studies of the bonding chemistry of germanium oxides and related systems
resolves10.1016/0022-3093(93)90170-3
Core level binding energy shifts in liquid binary alloys: AuGa
resolves10.1016/j.jcrysgro.2007.11.001
Angle-resolved XPS structural investigation of GaAs surfaces
resolves10.1016/0040-6090(78)90341-3
Behaviour of gold in the vicinity of the interface during annealing
resolves10.1016/0040-6090(87)90436-6
Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies: X-ray photoelectron spectroscopy, tunable electron energy loss spectroscopy and Auger electron spectroscopy
resolves10.1063/1.2743729
X-ray photoelectron spectroscopic study of the formation of catalytic gold nanoparticles on ultraviolet-ozone oxidized GaAs(100) substrates
resolves10.1016/0368-2048(74)85015-2
ESCA study of molecular GeS3-x Tex As2 glasses
resolves10.1021/j100505a006
An ESCA study of the termination of the passivation of elemental metals
resolves10.1116/1.577913
Core level x-ray photoelectron spectroscopy of Au<i>x</i>Ga<i>y</i> alloys
The 2 references without a DOI — listed, not checked
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no DOI — not checked13
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