Reference health
Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
25/25 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 25 checked references that resolve
resolves10.1143/JJAP.36.L382
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
resolves10.1063/1.121560
Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers
resolves10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO;2-K
Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences
resolves10.1063/1.1448668
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
resolves10.1063/1.122247
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
resolves10.1063/1.1645994
Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
resolves10.1063/1.1426237
Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy
resolves10.1103/PhysRevB.69.045310
Photocurrent spectroscopy as a tool for determining piezoelectric fields in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:math>multiple quantum well light emitting diodes
resolves10.1109/LED.2010.2051406
Effects of Patterned Sapphire Substrates on Piezoelectric Field in Blue-Emitting InGaN Multiple Quantum Wells
resolves10.1103/PhysRevB.60.8849
Effects of macroscopic polarization in III-V nitride multiple quantum wells
resolves10.1063/1.4941815
Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes
resolves10.1063/1.123727
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
resolves10.1016/j.jcrysgro.2014.09.049
Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
resolves10.1063/1.4926865
Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions
resolves10.7567/JJAP.55.05FJ03
Large Stokes-like shift in N-polar
InGaN/GaN multiple-quantum-well light-emitting diodes
resolves10.1063/1.1493229
Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy
resolves10.1103/PhysRevB.66.035334
Field-dependent carrier decay dynamics in strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:math>quantum wells
resolves10.1063/1.1314906
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
resolves10.1109/JQE.2012.2186610
Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes
resolves10.1063/1.4754079
Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
The 1 reference without a DOI — listed, not checked
no DOI — not checkedLefebvre P, Morel A, Gallart M, Taliercio T, Allègre J, Gil B, Mathieu H (2001) High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy. Appl Phys Lett 78:9
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