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Numerical investigation of strain effects on properties of AlGaAs/InGaAs multiple quantum well solar cells
22/22 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 22 checked references that resolve
resolves10.1063/1.105553
Short-circuit current and energy efficiency enhancement in a low-dimensional structure photovoltaic device
resolves10.1063/1.366510
Observation of suppressed radiative recombination in single quantum well p-i-n photodiodes
resolves10.1103/PhysRevLett.78.5014
Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
resolves10.1109/16.791981
Detailed balance efficiency limits with quasi-Fermi level variations [QW solar cell]
resolves10.1103/PhysRev.84.129
The Effects of Pressure and Temperature on the Resistance of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>Junctions in Germanium
resolves10.1063/1.363574
Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well <i>p</i>–<i>i</i>–<i>n</i> diodes
resolves10.1016/S0927-0248(00)00346-9
Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells
resolves10.1109/TED.2003.813475
Modeling of multiple-quantum-well solar cells including capture, escape, and recombination of photoexcited carriers in quantum wells
resolves10.1103/PhysRevB.52.8132
First-principles calculations of effective-mass parameters of AlN and GaN
resolves10.1063/1.324472
The effect of elastic strain on energy band gap and lattice parameter in III-V compounds
resolves10.4236/jcc.2013.17010
Study on the Luminescence Properties of the Strain Compensated Quantum Well
resolves10.1016/0927-0248(95)00060-7
Experimental analysis of the efficiency of heterostructure GaAsAlGaAs solar cells
resolves10.1016/S0927-0248(00)00411-6
Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells
The 10 references without a DOI — listed, not checked
no DOI — not checkedEfficiency of multiple quantum well solar cells
no DOI — not checkedQuasi-Fermi level separation in quantum well solar cells
no DOI — not checkedA detailed study of the radiative currents from double quantum well solar cells
no DOI — not checkedGallium arsenide/indium gallium arsenide multi-quantum well solar cells
no DOI — not checkedExperimental analysis of GaAs-InGaAs MQW solar cells
no DOI — not checkedQuantum well solar cell dark currents
no DOI — not checkedao-57-24-7045-R21
no DOI — not checkedao-57-24-7045-R22
no DOI — not checkedPhysical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime
no DOI — not checkedIn-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), [110], and (111) Si
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