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Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes

44/44 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 44 checked references that resolve

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High-quantum-efficiency ultraviolet solar-blind AlGaN photocathode detector with a sharp spectral sensitivity threshold at 300 nm

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Negative electron affinity GaAs wire-array photocathodes

resolves10.1016/j.ultramic.2019.04.010

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Perspectives on Designer Photocathodes for X-ray Free-Electron Lasers: Influencing Emission Properties with Heterostructures and Nanoengineered Electronic States

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First Lasing of the CAEP THz FEL facility Driven by a Superconducting Accelerator

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Scanning ultrafast electron microscopy: A novel technique to probe photocarrier dynamics with high spatial and temporal resolutions

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NEA photocathode for SEM application

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Patterned negative electron affinity photocathodes for maskless electron beam lithography

resolves10.1109/TDEI.2015.005126

High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

resolves10.1103/PhysRevSTAB.17.042802

Maximum intensity, transmission limited cold electron beams from GaAs photocathode in the eV and sub-eV kinetic energy range

resolves10.1007/s00339-016-0532-7

Spectral sensitivity of graded composition AlGaAs/GaAs nanowire photodetectors

resolves10.1364/OE.23.019478

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Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector

resolves10.1126/science.aag2472

Optically resonant dielectric nanostructures

resolves10.1038/nnano.2015.304

All-dielectric metamaterials

resolves10.1364/OPN.28.1.000024

Meta-Optics with Mie Resonances

resolves10.1021/acsphotonics.7b01038

Functional Meta-Optics and Nanophotonics Governed by Mie Resonances

resolves10.1038/ncomms1691

Broadband omnidirectional antireflection coating based on subwavelength surface Mie resonators

resolves10.1021/nl9036627

Semiconductor Nanowire Optical Antenna Solar Absorbers

resolves10.1364/OE.21.026285

Designing dielectric resonators on substrates: Combining magnetic and electric resonances

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On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays

resolves10.1063/1.3647847

Theoretical analysis and modeling of light trapping in high efficicency GaAs nanowire array solar cells

resolves10.1038/nphoton.2013.32

Single-nanowire solar cells beyond the Shockley–Queisser limit

resolves10.1038/ncomms2509

GaAs nanopillar-array solar cells employing in situ surface passivation

resolves10.1063/1.4775578

Enhanced external quantum efficiency in rectangular single nanowire solar cells

resolves10.1021/acs.nanolett.5b01008

Broadband Quantum Efficiency Enhancement in High Index Nanowire Resonators

resolves10.1021/nl400083g

Direct-Bandgap Epitaxial Core–Multishell Nanopillar Photovoltaics Featuring Subwavelength Optical Concentrators

resolves10.1103/PhysRevAccelBeams.19.103402

Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes

resolves10.1007/BF00896137

Negative affinity 3–5 photocathodes: Their physics and technology

resolves10.1063/1.2435075

Variation of quantum-yield curves for GaAs photocathodes under illumination

resolves10.1016/j.optcom.2016.01.031

Photoemission characteristics of graded band-gap AlGaAs/GaAs wire photocathode

resolves10.1063/1.4794822

Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes

resolves10.1002/9783527618156

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Empirical low-field mobility model for III–V compounds applicable in device simulation codes

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Analysis of quantum efficiency improvement in spin-polarized photocathode

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resolves10.1364/OE.23.0A1220

Light-trapping in photon enhanced thermionic emitters

The 2 references without a DOI — listed, not checked

no DOI — not checkedSemiconductors

no DOI — not checkedGALLIUM ARSENIDE GaAs

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