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Synthesis of large scale MoS<sub>2</sub> for electronics and energy applications

https://doi.org/10.1557/jmr.2016.100
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31/31 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

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The 31 checked references that resolve
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resolves10.1038/nchem.1589
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Structural, electrical and mechanical properties of magnetron sputtered NiTi/PZT/TiOx thin film heterostructures
resolves10.1038/nnano.2010.279
Single-layer MoS2 transistors
resolves10.1063/1.4902937
Domain engineering of physical vapor deposited two-dimensional materials
resolves10.1002/adma.201402847
Edge‐Oriented MoS<sub>2</sub> Nanoporous Films as Flexible Electrodes for Hydrogen Evolution Reactions and Supercapacitor Devices
resolves10.1016/0040-6090(80)90493-9
Sputtered MoS2 lubricant coating improvements
resolves10.1002/smll.201102654
Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate
resolves10.1021/nn405938z
Few-Layer MoS<sub>2</sub>: A Promising Layered Semiconductor
resolves10.1038/nmat3633
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
resolves10.1073/pnas.0502848102
Two-dimensional atomic crystals
resolves10.1038/nnano.2012.193
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
resolves10.1103/PhysRevLett.105.136805
Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>MoS</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> : A New Direct-Gap Semiconductor
resolves10.1021/la053148a
Fabrication and Investigation of Nanostructures on Transition Metal Dichalcogenide Surfaces Using a Scanning Tunneling Microscope
resolves10.1063/1.4905476
Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices
resolves10.1080/10408436.2013.836075
Synthesis, Properties, and Applications of 2-D Materials: A Comprehensive Review
resolves10.1039/C5TA08095A
Directly deposited MoS <sub>2</sub> thin film electrodes for high performance supercapacitors
resolves10.1038/srep01866
Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films
resolves10.1021/am506198b
Growth of Large-Scale and Thickness-Modulated MoS<sub>2</sub> Nanosheets
resolves10.1021/acsami.5b00887
Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS<sub>2</sub>/Graphene Schottky Junction
resolves10.1080/14786437108217011
The lattice vibrations of the MoS<sub>2</sub>structure
resolves10.1038/nnano.2013.100
Ultrasensitive photodetectors based on monolayer MoS2
resolves10.1149/1.2778851
Electrochemical Double-Layer Capacitance of MoS[sub 2] Nanowall Films
resolves10.1063/1.4868108
Investigation of the optical properties of MoS<sub>2</sub> thin films using spectroscopic ellipsometry
resolves10.1557/JMR.1989.0180
Orientation of rf-sputter-deposited MoS<sub>2</sub> films
resolves10.1002/chem.200204635
Formation of MoS<sub>2</sub> Inorganic Fullerenes (IFs) by the Reaction of MoO<sub>3</sub> Nanobelts and S
resolves10.1002/anie.201106004
Single‐Layer Semiconducting Nanosheets: High‐Yield Preparation and Device Fabrication
resolves10.1002/smll.201370112
Flexible Electronics: Highly Flexible and Transparent Multilayer MoS<sub>2</sub> Transistors with Graphene Electrodes (Small 19/2013)
resolves10.1063/1.4885391
Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition
resolves10.1126/science.1226419
Liquid Exfoliation of Layered Materials
resolves10.1073/pnas.1316792110
Electrochemical tuning of vertically aligned MoS <sub>2</sub> nanofilms and its application in improving hydrogen evolution reaction
The 1 reference without a DOI — listed, not checked
no DOI — not checkedEmerging energy applications of two-dimensional layered materials
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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