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Evaluation of piezoresistivity properties of sputtered ZnO thin films

https://doi.org/10.1590/s1516-14392014005000080
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12/12 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

4 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 12 checked references that resolve
resolves10.1016/j.tsf.2004.06.194
Fabrication of ZnO thin film diode using laser annealing
resolves10.1016/j.sna.2008.01.012
Top-gate ZnO thin-film transistors with a polymer dielectric designed for ultraviolet optical gating
resolves10.1016/j.ijhydene.2010.02.006
Sensing mechanism of hydrogen gas sensor based on RF-sputtered ZnO thin films
resolves10.1063/1.328019
Structures and SAW properties of rf-sputtered single-crystal films of ZnO on sapphire
resolves10.1016/S0022-0248(02)02496-X
Investigation of piezoelectric ZnO film deposited on diamond like carbon coated onto Si substrate under different sputtering conditions
resolves10.1016/j.apsusc.2007.03.020
Influence of substrate temperature on the optical and piezoelectric properties of ZnO thin films deposited by rf magnetron sputtering
resolves10.1016/j.proeng.2010.09.183
Fabrication and characterization of a <mml:math altimg="si1.gif" display="inline" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.elsevier.com/xml/ja/dtd" xmlns:ja="http://www.elsevier.com/xml/ja/dtd" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:tb="http://www.elsevier.com/xml/common/table/dtd" xmlns:sb="http://www.elsevier.com/xml/common/struct-bib/dtd" xmlns:ce="http://www.elsevier.com/xml/common/dtd" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:cals="http://www.elsevier.com/xml/common/cals/dtd"><mml:mstyle mathvariant="normal"><mml:mi>SiC</mml:mi></mml:mstyle><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mstyle mathvariant="normal"><mml:mi>SiO</mml:mi></mml:mstyle></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:mstyle mathvariant="normal"><mml:mi>Si</mml:mi></mml:mstyle></mml:math> piezoresistive pressure sensor
resolves10.1016/S0040-6090(96)09274-7
Characterization and optimization of zinc oxide films by r.f. magnetron sputtering
resolves10.1016/S0924-4247(01)00812-3
4H-SiC: a material for high temperature Hall sensor
resolves10.1016/j.ceramint.2003.12.197
ZnO thin films produced by magnetron sputtering
resolves10.1016/j.apsusc.2013.02.045
Capacitive humidity-sensing properties of Zn2SiO4 film grown on silicon nanoporous pillar array
resolves10.1063/1.349794
Electrical and optical properties of boron-doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition
The 4 references without a DOI — listed, not checked
no DOI — not checkedref10
no DOI — not checkedref11
no DOI — not checkedref12
no DOI — not checkedref15
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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