Reference health
Signatures of Bright‑To‑Dark Exciton Conversion in Corrugated Mos2 Monolayers
32/32 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
11 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 32 checked references that resolve
resolves10.1103/PhysRevB.99.195454
Dark exciton based strain sensing in tungsten-based transition metal dichalcogenides
resolves10.1103/PhysRevB.93.205423
Exciton radiative lifetime in transition metal dichalcogenide monolayers
resolves10.1038/s41699-018-0074-2
Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
resolves10.1016/j.eml.2017.01.008
A review on mechanics and mechanical properties of 2D materials—Graphene and beyond
resolves10.1021/nl501793a
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS<sub>2</sub>, WS<sub>2</sub>, and Their Bilayer Heterostructures
resolves10.1021/acs.nanolett.6b02615
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS<sub>2</sub>
resolves10.1103/PhysRevB.88.155404
Strain effects on the spin-orbit-induced band structure splittings in monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>and graphene
resolves10.1080/08927022.2016.1233549
Band gap and electronic properties of molybdenum disulphide under strain engineering: density functional theory calculations
resolves10.1021/acs.nanolett.7b04868
Strain Control of Exciton–Phonon Coupling in Atomically Thin Semiconductors
resolves10.1038/srep41593
Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts
resolves10.1002/adma.201602854
Piezophototronic Effect in Single‐Atomic‐Layer MoS<sub>2</sub> for Strain‐Gated Flexible Optoelectronics
resolves10.1038/nature13792
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
resolves10.1021/acsnano.5b07545
Periodic Modulation of the Doping Level in Striped MoS<sub>2</sub> Superstructures
resolves10.1002/adma.201602626
Indirect Bandgap Puddles in Monolayer MoS<sub>2</sub> by Substrate‐Induced Local Strain
resolves10.1039/C7NR03537C
Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS
<sub>2</sub>
nanosheets
resolves10.1038/nphoton.2012.285
Strain-engineered artificial atom as a broad-spectrum solar energy funnel
resolves10.1002/adma.200601625
Nanofacet Lithography: A New Bottom‐Up Approach to Nanopatterning and Nanofabrication by Soft Replication of Spontaneously Faceted Crystal Surfaces
resolves10.1016/j.eurpolymj.2015.12.020
Poly(ethylene oxide)-block-polystyrene thin films morphology controlled by drying conditions and substrate topography
resolves10.1126/science.1168108
Macroscopic 10-Terabit–per–Square-Inch Arrays from Block Copolymers with Lateral Order
resolves10.1039/C3NR06462J
Dependence of coupling of quasi 2-D MoS
<sub>2</sub>
with substrates on substrate types, probed by temperature dependent Raman scattering
resolves10.1021/acs.nanolett.7b02322
Highly Localized Strain in a MoS<sub>2</sub>/Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy
resolves10.1103/PhysRevB.95.165301
Enhanced spin-flip scattering by surface roughness in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>armchair nanoribbons
The 11 references without a DOI — listed, not checked
no DOI — not checkedRadiative lifetimes of excitons and trions in monolayers of the metal dichalcogenide MoS 2
no DOI — not checkedref14
no DOI — not checkedMeasurement of the Spin-Forbidden Dark Excitons in MoS 2 and MoSe 2 monolayers
no DOI — not checkedThickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX 2 semiconductors
no DOI — not checkedStrain effects on monolayer MoS 2 field effect transistors
no DOI — not checkedStrain tuning of optical emission energy and polarization in monolayer and bilayer MoS 2
no DOI — not checkedLattice strain effects on the optical properties of MoS 2 nanosheets
no DOI — not checkedOptoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide
no DOI — not checkedRaman-scattering measurements and first-principles calculations of strain-induced phononshifts in monolayer MoS 2
no DOI — not checkedResonant Raman and photoluminescence spectra of suspended molybdenum disulphide
no DOI — not checkedProbing nanoscale variations in strain and band structure of MoS 2 on Au nanopyramids using tip-enhanced Raman spectroscopy
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