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Effect of Annealing Temperature on Resistive Switching Behavior of Al/ La0.7sr0.3mno3 /Lanio3 Devices
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 26 checked references that resolve
resolves10.1088/0268-1242/31/6/063002
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
resolves10.1186/s11671-020-03299-9
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
resolves10.1186/s11671-015-0740-7
Physical and chemical mechanisms in oxide-based resistance random access memory
resolves10.1186/s11671-016-1570-y
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
resolves10.1016/j.ceramint.2020.12.064
Resistive random access memory characteristics of NiO thin films with an oxygen-deficient NiO0.95 layer
resolves10.1063/1.126464
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
resolves10.1016/j.matlet.2014.01.157
Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography
resolves10.1088/1361-6463/aa9c8d
Modulation of resistive switching characteristics for individual BaTiO
<sub>3</sub>
microfiber by surface oxygen vacancies
resolves10.1063/1.1915529
Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag–La0.7Ca0.3MnO3–Pt sandwiches
resolves10.1016/j.ssc.2007.06.006
Study on the resistive switching properties of epitaxial La0.67Sr0.33MnO3 films
resolves10.1166/jnn.2011.3202
Aluminum Oxide Formation at Al/La<sub>1−<i>x</i></sub>Sr<sub><i>x</i></sub>MnO<sub>3</sub> Interface: A Computational Study for Resistance Random Access Memory Applications
resolves10.1063/1.2211147
Interface resistance switching at a few nanometer thick perovskite manganite active layers
resolves10.1016/j.apsusc.2021.151711
Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions
resolves10.1016/j.jallcom.2010.10.134
Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications
resolves10.1063/1.4943788
Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories
resolves10.1063/1.1562009
Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol–gel
resolves10.1063/5.0001770
Fowler–Nordheim tunneling-assisted enhancement of tunneling electroresistance effect through a composite barrier
resolves10.1063/1.4962655
Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
resolves10.1063/5.0009645
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier
resolves10.1016/j.ceramint.2019.09.089
Electrochemical tuning induced oxygen vacancies for the photoluminescence enhancement
resolves10.1039/D1NR07000B
Engineering the oxygen vacancies of rocksalt-type high-entropy oxides for enhanced electrocatalysis
resolves10.1002/smll.201101796
Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO<sub>3</sub> Resistive Switching Memories
resolves10.1039/C0JM02256J
Phase evolution of perovskite LaNiO
<sub>3</sub>
nanofibers for supercapacitor application and p-type gas sensing properties of LaOCl–NiO composite nanofibers
The 11 references without a DOI — listed, not checked
no DOI — not checkedref2
no DOI — not checkedNew Conduction and Reversible Memory Phenomena in Thin Insulating Films
no DOI — not checkedReliable Resistive Switching and Synaptic Behaviors Based on a TiO x -Doped N Memristor for Information Storage and Neuromorphic Computing
no DOI — not checkedReliable analog resistive switching behaviors achieved using memristive devices in AlO x /HfO x bilayer structure for neuromorphic systems
no DOI — not checkedResistive switching characteristics of Ti/ZrO 2 /Pt RRAM device
no DOI — not checkedref16
no DOI — not checkedEnhanced resistive switching behavior of CH 3 NH 3 PbI 3 based resistive random access memory by nickel doping
no DOI — not checkedTrap-assisted tunneling resistance switching effect in CeO 2 /La 0
no DOI — not checkedDiode-like volatile resistive switching properties in amorphous Sr-doped LaMnO 3 thin films under lower current compliance
no DOI — not checkedLow-temperature characteristics of magnesium fluoride based bipolar RRAM devices
no DOI — not checkedNonvolatile resistive switching behaviour and the mechanism in Nd:BiFeO 3 /Nb:SrTiO 3 heterostructure
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