Reference health
A Facile Approach Towards Wrinkle-Free Transfer of 2d-Mos2 Films Via Hydrophilic Si3n4 Substrate Engineering
27/27 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
20 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 27 checked references that resolve
resolves10.1021/nl301702r
High-Performance Single Layered WSe<sub>2</sub> p-FETs with Chemically Doped Contacts
resolves10.1038/s41467-021-23711-x
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
resolves10.1038/s41467-017-01824-6
Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array
resolves10.1126/science.aba1416
Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices
resolves10.1038/s41467-020-17517-6
Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method
resolves10.1038/s41699-021-00264-7
Bottom-up water-based solution synthesis for a large MoS2 atomic layer for thin-film transistor applications
resolves10.1021/acsnano.0c09430
High-Crystalline Monolayer Transition Metal Dichalcogenides Films for Wafer-Scale Electronics
resolves10.1007/s12274-020-2787-8
Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit
resolves10.1002/adma.202003542
High‐Throughput Growth of Wafer‐Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening
resolves10.1021/acs.chemmater.7b01367
Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS<sub>2</sub> by Pulsed Metal–Organic Chemical Vapor Deposition
resolves10.1021/acsami.0c02393
Exceptionally Uniform and Scalable Multilayer MoS<sub>2</sub> Phototransistor Array Based on Large-Scale MoS<sub>2</sub> Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization
resolves10.1021/acs.nanolett.0c02531
Wafer-Scale Highly Oriented Monolayer MoS<sub>2</sub> with Large Domain Sizes
resolves10.1038/s41565-021-00963-8
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire
resolves10.1038/nmat3633
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
resolves10.1002/adfm.201401389
Highly Uniform Trilayer Molybdenum Disulfide for Wafer‐Scale Device Fabrication
resolves10.1002/smll.201102654
Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate
resolves10.1021/acsnano.7b03819
Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS<sub>2</sub> Continuous Films
resolves10.1021/acsami.7b10676
Wafer-Scale Integration of Highly Uniform and Scalable MoS<sub>2</sub> Transistors
resolves10.1021/acs.chemmater.8b03128
Selective Transfer of Rotationally Commensurate MoS<sub>2</sub> from an Epitaxially Grown van der Waals Heterostructure
resolves10.1002/smtd.202000072
Wafer‐Scale Fabrication of Nanopore Devices for Single‐Molecule DNA Biosensing using MoS<sub>2</sub>
resolves10.1021/nn5057673
Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Monolayer and Few-Layer MoS<sub>2</sub> Films onto Arbitrary Substrates
resolves10.1039/C6CP00036C
Thickness dependence of surface energy and contact angle of water droplets on ultrathin MoS
<sub>2</sub>
films
resolves10.1021/acsnano.0c10759
Ultraflat Sub-10 Nanometer Gap Electrodes for Two-Dimensional Optoelectronic Devices
The 20 references without a DOI — listed, not checked
no DOI — not checkedThe Road for 2D Semiconductors in the Silicon Age
no DOI — not checkedref2
no DOI — not checkedref5
no DOI — not checkedref7
no DOI — not checkedref8
no DOI — not checkedUniversal mechanical exfoliation of large-area 2D crystals
no DOI — not checkedCentimeter-scale Green Integration of Layer-by-Layer 2D TMD vdW Heterostructures on Arbitrary Substrates by Water-Assisted Layer Transfer
no DOI — not checkedref23
no DOI — not checkedref24
no DOI — not checkedBatch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass
no DOI — not checkedControllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film
no DOI — not checkedRaman Spectroscopy of Suspended MoS2
no DOI — not checkedref37
no DOI — not checkedSurface roughness induced electron mobility degradation in InAs nanowires
no DOI — not checkedRational Design on Wrinkle-Less Transfer of Transition Metal Dichalcogenide Monolayer by Adjustable Wettability-Assisted Transfer Method
no DOI — not checkedref41
no DOI — not checkedSelf-Assembly of Three-Dimensional Metal Islands: Nonstrained versus Strained Islands
no DOI — not checkedFast transient charging at the graphene/ SiO2 interface causing hysteretic device characteristics
no DOI — not checkedref46
no DOI — not checkedFast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric
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