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Growth Dynamics of Epitaxial Interfacial Carbon Layers at the Epitaxial Al2o3(0001)/Cu(111) Interface for Scalable High-Quality Graphene Transfer Applications

https://doi.org/10.2139/ssrn.4160564
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20/20 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

10 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 20 checked references that resolve
resolves10.1038/s41586-019-1573-9
Graphene and two-dimensional materials for silicon technology
resolves10.1038/nature26160
Unconventional superconductivity in magic-angle graphene superlattices
resolves10.1016/j.scib.2017.07.005
Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil
resolves10.1021/acsnano.8b02444
Highly Oriented Monolayer Graphene Grown on a Cu/Ni(111) Alloy Foil
resolves10.1038/s41565-019-0622-8
Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil
resolves10.1021/acs.jpcc.5b09461
Epitaxial Al<sub>2</sub>O<sub>3</sub>(0001)/Cu(111) Template Development for CVD Graphene Growth
resolves10.1021/acsnano.7b06196
Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates
resolves10.1016/j.carbon.2020.02.074
Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology
resolves10.1021/acs.chemmater.0c02296
Crystal Orientation Dependent Oxidation Modes at the Buried Graphene–Cu Interface
resolves10.1021/acs.chemmater.8b04196
Do-It-Yourself Transfer of Large-Area Graphene Using an Office Laminator and Water
resolves10.1002/adma.201505123
Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication
resolves10.1016/j.apsusc.2018.04.261
Study on the formation of graphene by ion implantation on Cu, Ni and CuNi alloy
resolves10.1007/s10853-017-1710-5
Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation
resolves10.1021/nl201362n
Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition
resolves10.1016/j.carbon.2011.11.020
Few-layer graphene synthesis on a dielectric substrate
resolves10.1021/acsami.8b07655
Intergrain Diffusion of Carbon Radical for Wafer-Scale, Direct Growth of Graphene on Silicon-Based Dielectrics
resolves10.1016/j.scriptamat.2004.03.028
The solubility of C in solid Cu
resolves10.1063/1.4817829
Giant secondary grain growth in Cu films on sapphire
resolves10.1002/smll.201402483
Study on the Diffusion Mechanism of Graphene Grown on Copper Pockets
resolves10.1021/acs.jpcc.7b09622
Dominant Kinetic Pathways of Graphene Growth in Chemical Vapor Deposition: The Role of Hydrogen
The 10 references without a DOI — listed, not checked
no DOI — not checkedPreparation and uses of large area single crystal metal foils
no DOI — not checkedEpitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 �C via Chemical Vapor Deposition
no DOI — not checkedEpitaxial (111) films of Cu, Ni, and Cu xNi y on ?-Al 2O 3 (0001) for graphene growth by chemical vapor deposition
no DOI — not checkedref13
no DOI — not checkedThe Wet-Oxidation of a Cu(111) Foil Coated by Single Crystal Graphene
no DOI — not checkedDirect graphene synthesis on SiO 2 /Si substrate by ion implantation
no DOI — not checkedBarrier-assisted ion beam synthesis of transfer-free graphene on an arbitrary substrate
no DOI — not checkedDirect fabrication of graphene on SiO2 enabled by thin film stress engineering
no DOI — not checkedref25
no DOI — not checkedGraphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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