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Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures
33/33 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
17 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 33 checked references that resolve
resolves10.1134/S1063782606120116
Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells
resolves10.1088/0953-8984/16/31/006
Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
resolves10.1016/0039-6028(73)90337-3
Third-derivative modulation spectroscopy with low-field electroreflectance
resolves10.1063/1.3462299
Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement
resolves10.1063/1.1609651
Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure
resolves10.1063/1.346176
Correlation of interference effects in photoreflectance spectra with GaAs homolayer thickness
resolves10.1063/1.2437729
Fermi level shift in GaInNAsSb∕GaAs quantum wells upon annealing studied by contactless electroreflectance
resolves10.1063/1.2743382
Contactless electroreflectance investigation of energy levels in a 1.3μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs∕GaAs quantum wells
resolves10.1063/1.119160
Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure
resolves10.1063/1.3213613
Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations
resolves10.1063/1.1556176
Effect of InAs quantum dots on the Fermi level pinning of undoped-n+ type GaAs surface studied by contactless electroreflectance
resolves10.1063/1.1737065
Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells
resolves10.1063/1.2355551
On the modulation mechanisms in photoreflectance of an ensemble of self-assembled InAs∕GaAs quantum dots
resolves10.1063/1.368288
Characterization of a graded index of refraction separate confinement heterostructure (GRINSCH) laser structure using contactless electroreflectance
resolves10.1016/j.apsusc.2006.05.073
Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure: A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wells
resolves10.1063/1.2817258
Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells
resolves10.1063/1.1873052
Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance
resolves10.1063/1.121759
Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures
resolves10.1063/1.3266011
Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues
resolves10.1063/1.1774258
The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed
resolves10.1063/1.1628393
Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy
resolves10.1063/1.1776312
Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs
resolves10.1063/1.3125508
Photoreflectance study of exciton energies and linewidths for homoepitaxial and heteroepitaxial GaN layers
resolves10.1103/PhysRevB.10.4228
Band nonparabolicities, broadening, and internal field distributions: The spectroscopy of Franz-Keldysh oscillations
resolves10.1088/0268-1242/21/10/005
Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers
resolves10.1063/1.3592801
The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures
resolves10.1063/1.3073718
Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–1.65 μm: Broadening of the fundamental transition
resolves10.1063/1.2714686
The formation of self-assembled InAs∕GaAs quantum dots emitting at 1.3μm followed by photoreflectance spectroscopy
The 17 references without a DOI — listed, not checked
no DOI — not checkedIntrinsic limitations to the doping of wide gap semiconductors
no DOI — not checkedContactless electroreflectance and photo luminescence study of highly strained InGaAs double quantum wells a
no DOI — not checkedModulated reflectivity probing of quantum dot and wetting layer states in InAs InP quantum dot laser structures a
no DOI — not checkedPhotoreflectance spec troscopy of low dimensional semiconductor structures
no DOI — not checkedand Photoreflectance and contactless electrore flectance spectroscopy of GaAs based structures : The below band gap oscillation features
no DOI — not checkedand Photoreflectance spectroscopy of step like GaInNAs GaAs quantum wells a
no DOI — not checkedEvidence for Fermi level shift in GaInAs / GaAs quantum well upon nitrogen incorpo ration Solid State
no DOI — not checkedApplication of contactless electroreflectance to III nitrides
no DOI — not checkedApplication of contactless electroreflectance to study the epi readiness of m plane GaN substrates obtained by ammo nothermal method
no DOI — not checkedContactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs / AlGaAs resonant cavity Solid State
no DOI — not checkedOn the deep ness of contactless electroreflectance probing in semicon ductor structures a
no DOI — not checkedContactless electroreflectance studies of II VI nanostruc tures grown by molecular beam epitaxy
no DOI — not checkedPhotoreflectance spectroscopy of microstructures Semiconductors and Semi metals Vol edited by Academic Press New York
no DOI — not checkedModulation spectroscopy of semiconduc tor materials interfaces and microstructures : an overview San Diego
no DOI — not checkedOptically probed wetting layer in InAs InP quantum dash structures
no DOI — not checkedSemi conductor heterostructures and device structures investigated by photo reflectance spectroscopy
no DOI — not checkedPhoto modulated reflectance and transmittance : optical character ization of novel semiconductor materials and device struc tures Thin Solid
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