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On Local Activity and Edge of Chaos in a NaMLab Memristor
50/50 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
8 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 50 checked references that resolve
resolves10.1007/978-3-319-71048-8_7
Memristor and Memristor Circuit Modelling Based on Methods of Nonlinear System Theory
resolves10.1109/TCSI.2020.2978460
Theoretical Foundations of Memristor Cellular Nonlinear Networks: A DRM<sub>2</sub>-Based Method to Design Memcomputers With Dynamic Memristors
resolves10.1109/TCSI.2019.2957813
Theoretical Foundations of Memristor Cellular Nonlinear Networks: Stability Analysis With Dynamic Memristors
resolves10.3389/fnano.2021.633026
System-Theoretic Methods for Designing Bio-Inspired Mem-Computing Memristor Cellular Nonlinear Networks
resolves10.1049/el.2011.2913
Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be ‘self-crossing’
resolves10.1021/acs.nanolett.9b01554
Fast Spiking of a Mott VO<sub>2</sub>–Carbon Nanotube Composite Device
resolves10.1109/IEDM.2014.7047135
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
resolves10.1109/JPROC.2014.2313954
Neuromorphic Electronic Circuits for Building Autonomous Cognitive Systems
resolves10.1109/ISCAS51556.2021.9401280
Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbO<sub>x</sub> Memristors
resolves10.1063/1.5026506
Perspective: Memcomputing: Leveraging memory and physics to compute efficiently
resolves10.1142/S0218127498000152
Edge of Chaos and Local Activity Domain of FitzHugh-Nagumo Equation
resolves10.1126/science.aaw5581
Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing
resolves10.1063/1.4939913
An accurate locally active memristor model for S-type negative differential resistance in NbOx
resolves10.1113/jphysiol.1952.sp004764
A quantitative description of membrane current and its application to conduction and excitation in nerve
resolves10.1088/0957-4484/24/38/384010
Integration of nanoscale memristor synapses in neuromorphic computing architectures
resolves10.1038/nature23307
Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
resolves10.1002/adem.200800294
Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials
resolves10.1088/0957-4484/23/21/215202
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
resolves10.1088/0957-4484/24/38/384002
Phase transitions enable computational universality in neuristor-based cellular automata
resolves10.1039/C5RA19300A
Physical model of threshold switching in NbO
<sub>2</sub>
based memristors
resolves10.1109/TCSI.2019.2940909
Theoretical Foundations of Memristor Cellular Nonlinear Networks: Memcomputing With Bistable-Like Memristors
resolves10.1038/s41598-020-71962-3
Monitoring PSA levels as chemical state-variables in metal-oxide memristors
resolves10.1109/TCSI.2019.2894218
Pattern Formation With Locally Active S-Type NbO<sub>x</sub> Memristors
resolves10.1109/TCSI.2021.3061973
Improved Vertex Coloring With NbO<i>ₓ</i> Memristor-Based Oscillatory Networks
resolves10.1021/am5021149
Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb<sub>2</sub>O<sub>5</sub>/NbO<sub><i>x</i></sub> Films
resolves10.1038/s41467-018-07052-w
Biological plausibility and stochasticity in scalable VO2 active memristor neurons
The 8 references without a DOI — listed, not checked
no DOI — not checkedAscoliA. TetzlaffR. KangS. M. ChuaL. O. Edge of Chaos: The Elan Vital of Complex Phenomena
no DOI — not checkedLinear and Nonlinear Circuits
no DOI — not checkedGlobal Foundries Announcement, 28th August 20182018
no DOI — not checkedRoom temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect174177 MähneH. WylezichH. SlesazeckS. MikolajickT. VeselyJ. KlemmV. Proceedings of the 5th IEEE International Memory Workshop (IMW)2013
no DOI — not checkedMainzerK. ChuaL. O. Imperial College PressLocal Activity Principle2013
no DOI — not checkedCramming more components onto integrated circuits
no DOI — not checkedUnfolding the threshold switching behavior of a memristor156164 SlesazeckS. AscoliA. MähneH. TetzlaffR. MikolajickT. MladenovV. M. IvanovP. C. Springer International Publishing SwitzerlandProceedings of the International IEEE Workshop on NDES2014
no DOI — not checkedAnalysis of Vth variability in NbOx-based threshold switches SlesazeckS. HerzigM. MikolajickT. AscoliA. WeiherM. TetzlaffR. IEEE Nonvolatile Memory Technology Symposium (NVMTS)2016
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