Reference health
Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure
25/25 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 25 checked references that resolve
resolves10.1109/LED.2021.3076802
10 kV, 39 mΩ·cm<sup>2</sup> Multi-Channel AlGaN/GaN Schottky Barrier Diodes
resolves10.1109/JSEN.2021.3080506
Cube-Shaped GaN UV Photodetectors Using 3D-Printed Panels for Omnidirectional Detection
resolves10.1109/TMTT.2012.2187535
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
resolves10.1109/TPEL.2013.2288644
Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs
resolves10.1088/1674-1056/25/12/127305
Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate
resolves10.1109/IEDM.2014.7046969
Power devices on bulk gallium nitride substrates: An overview of ARPA-E's SWITCHES program
resolves10.1109/TED.2021.3083239
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I
resolves10.1002/pssa.201532575
Design and fabrication of a 1.2 kV GaN‐based MOS vertical transistor for single chip normally off operation
resolves10.1109/LED.2016.2616508
OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET
resolves10.1109/TED.2013.2266544
Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT
resolves10.1109/IEDM.2016.7838385
1.7 kV/1.0 mΩcm<sup>2</sup>normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
resolves10.1109/LED.2018.2828844
880 V/$2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates
resolves10.1109/TED.2022.3146110
A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage
resolves10.1016/j.spmi.2017.10.006
A breakdown enhanced AlGaN/GaN MISFET with source-connected P-buried layer
resolves10.1088/1361-6641/ab2013
Theoretical investigation of high-voltage superjunction GaN-based vertical hetero-junction field effect transistor with ununiformly doped buffer to suppress charge imbalance effect
resolves10.1109/ACCESS.2021.3049374
Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
resolves10.1109/ICEPT50128.2020.9202702
Simulation Study of GaN-based Trench CAVET with p-Shielded Region
resolves10.1109/ACCESS.2019.2924999
Technology Computer Aided Design Study of GaN MISFET With Double P-Buried Layers
resolves10.1063/1.365392
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
resolves10.1109/LED.2011.2173456
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
resolves10.1109/TED.2016.2632150
Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer
resolves10.1109/ISPSD46842.2020.9170190
High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect
resolves10.1109/EDTM.2019.8731215
Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD
The 1 reference without a DOI — listed, not checked
no DOI — not checkedDeboy, G., Marz, N., Stengl, J.-P., Strack, H., Tihanyi, J., and Weber, H. (1998, January 6–9). A new generation of high voltage MOSFETs breaks the limit line of silicon. Proceedings of the International Electron Devices Meeting 1998. Technical Digest (Cat. No. 98CH36217), San Francisco, CA, USA.
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