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Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application
27/27 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 27 checked references that resolve
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Building high-level features using large scale unsupervised learning
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NON-DESTRUCTIVE WHOLE-BRAIN MONITORING USING NANOROBOTS: NEURAL ELECTRICAL DATA RATE REQUIREMENTS
resolves10.1109/TELE55498.2022.9801065
The Introduction of Artificial Intelligence in the Study of Economic Disciplines in Higher Educational Institutions
resolves10.1523/JNEUROSCI.18-24-10464.1998
Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type
resolves10.1088/0957-4484/18/36/365202
Self-organized computation with unreliable, memristive nanodevices
resolves10.1039/C8NR04734K
Ultra-low power Hf
<sub>0.5</sub>
Zr
<sub>0.5</sub>
O
<sub>2</sub>
based ferroelectric tunnel junction synapses for hardware neural network applications
resolves10.1088/1361-6641/ac1b11
Ferroelectric HfO
<sub>2</sub>
-based synaptic devices: recent trends and prospects
resolves10.1103/PhysRevB.66.214109
Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films
resolves10.1103/PhysRevLett.99.267602
Domain Switching Kinetics in Disordered Ferroelectric Thin Films
resolves10.1063/1.5119948
Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory
resolves10.1021/acsami.7b14369
Effect of Polarization Reversal in Ferroelectric TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy
resolves10.3390/ma15062251
Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications
resolves10.1002/admt.202101323
Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications
resolves10.1038/npre.2009.3010.1
Memristance can explain Spike-Time-Dependent-Plasticity in Neural Synapses
resolves10.1038/s41598-019-54215-w
Spike-shape dependence of the spike-timing dependent synaptic plasticity in ferroelectric-tunnel-junction synapses
resolves10.1109/IJCNN.2016.7727298
Resistive memory device requirements for a neural algorithm accelerator
The 1 reference without a DOI — listed, not checked
no DOI — not checkedRelational recurrent neural networks
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