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Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

https://doi.org/10.35848/1347-4065/ab990a

33/33 checkable references clean · checked 2026-07-26

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 33 checked references that resolve

resolves10.1007/978-3-319-24100-5

III-Nitride Ultraviolet Emitters

resolves10.1002/ecj.10197

Development of 230–270 nm AlGaN‐based deep‐UV LEDs

resolves10.1038/s41566-019-0359-9

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

resolves10.1063/1.4767657

Internal quantum efficiency in AlGaN with strong carrier localization

resolves10.1143/APEX.4.052101

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

resolves10.1063/1.2170407

Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification

resolves10.1016/j.jcrysgro.2014.02.039

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

resolves10.1038/srep35934

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

resolves10.1016/j.jcrysgro.2019.125397

MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed sputtered AlN

resolves10.1143/APEX.5.082101

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

resolves10.7567/APEX.10.031002

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

resolves10.1143/APEX.5.055504

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

resolves10.7567/APEX.11.082101

6 kW/cm<sup>2</sup> UVC laser threshold in optically pumped lasers achieved by controlling point defect formation

resolves10.7567/1882-0786/ab50e0

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

resolves10.1143/APEX.4.082101

High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

resolves10.7567/APEX.6.092103

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

resolves10.1016/j.jcrysgro.2016.08.028

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

resolves10.7567/JJAP.57.01AD05

Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy

resolves10.1063/1.4983708

High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

resolves10.7567/1347-4065/ab0cfc

Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy

resolves10.1063/1.5087547

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

resolves10.1063/1.5010265

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

resolves10.7567/1347-4065/ab1126

Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

resolves10.1016/j.jallcom.2019.04.256

AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template

resolves10.1063/1.1600519

Band parameters for nitrogen-containing semiconductors

resolves10.1063/1.1947367

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

resolves10.1063/1.5022794

On compensation in Si-doped AlN

resolves10.1016/j.jcrysgro.2016.12.099

Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth

resolves10.1063/1.3087515

Strain relaxation in AlGaN multilayer structures by inclined dislocations

resolves10.1063/1.3695172

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

resolves10.1063/1.3589978

Strain in Si doped GaN and the Fermi level effect

resolves10.1143/APEX.3.111003

Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates

resolves10.1063/1.2206125

Mobile dislocation density and strain relaxation rate evolution during InxGa1−xAs∕GaAs heteroepitaxy

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