Reference health
Defect characterization of β-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by vertical Bridgman method
1 of 31 checkable references need attention · checked 2026-07-23
At the dated check, the references listed below either did not resolve in Crossref or DataCite, or carried a retraction notice. Each one is shown with the registry record that put it there.
References needing attention
does not resolve to a known work10.1002/1521-396X(200209)193:1<187::AID-PSSA187>3.0.CO%3B2-1
The 30 checked references that resolve
resolves10.1103/PhysRev.140.A316
Optical Absorption and Photoconductivity in the Band Edge of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1063/1.3674287
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
resolves10.7567/APEX.8.031101
High-mobility β-Ga<sub>2</sub>O<sub>3</sub>($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
resolves10.1063/1.2919728
Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
resolves10.1002/crat.201000341
Czochralski growth and characterization of β‐Ga<sub>2</sub>O<sub>3</sub> single crystals
resolves10.1117/12.2039305
β-Ga<sub>2</sub>O<sub>3</sub>and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga<sub>2</sub>O<sub>3</sub>potential for next generation of power devices
resolves10.1063/1.119233
Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
resolves10.1016/j.jcrysgro.2014.07.021
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
resolves10.1143/JJAP.47.8506
Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method
resolves10.1016/0022-0248(89)90087-0
Liquid encapsulated, vertical bridgman growth of large diameter, low dislocation density, semi-insulating GaAs
resolves10.1016/j.jcrysgro.2013.03.006
Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
resolves10.1016/j.jcrysgro.2014.03.007
Vertical Bridgman growth of sapphire—Seed crystal shapes and seeding characteristics
resolves10.1016/j.jcrysgro.2016.04.022
Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air
resolves10.7567/JJAP.55.1202A2
High-quality β-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by edge-defined film-fed growth
resolves10.7567/JJAP.54.051103
Characterization of defects in β-Ga<sub>2</sub>O<sub>3</sub> single crystals
resolves10.7567/JJAP.55.030303
Observation of nanometer-sized crystalline grooves in as-grown β-Ga<sub>2</sub>O<sub>3</sub> single crystals
resolves10.1143/APEX.5.035502
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
resolves10.1111/j.1151-2916.1966.tb15399.x
Flux Growth and Characterization of β‐Ga
<sub>2</sub>
O
<sub>3</sub>
Single Crystals
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