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Fundamental Aspects of MOVPE

https://doi.org/10.1002/9781119313021.ch2
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Defect‐Resistant Radiative Performance of m‐Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep‐Ultraviolet and Visible Polarized Light Emitters
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The Blue LED Nobel Prize: Historical context, current scientific understanding, human benefit
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The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal‐Organic Vapor Phase Epitaxy of GaAs1‐yBiy Films
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Effect of Sb on the quantum efficiency of GaInP solar cells
inferredcites →https://doi.org/10.1002/pssa.200880222openalex-snapshot
Growth of III‐nitride quantum dots and their applications to blue‐green LEDs
inferredcites →https://doi.org/10.1002/pssa.201600752openalex-snapshot
Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)
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Microstructure and electronic properties of InGaN alloys
inferredcites →https://doi.org/10.1002/pssb.201700394openalex-snapshot
A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys
inferredcites →https://doi.org/10.1007/978-1-4615-0631-7openalex-snapshot
Spontaneous Ordering in Semiconductor Alloys
inferredcites →https://doi.org/10.1007/978-1-4684-5053-8openalex-snapshot
Statistical Thermodynamics of Alloys
inferredcites →https://doi.org/10.1007/bf02652236openalex-snapshot
Use of tertiarybutylphosphine for the growth of InP and GaAs1-xPx
inferredcites →https://doi.org/10.1007/bf02654609openalex-snapshot
The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1007/bf02655555openalex-snapshot
Transmission electron microscopy study of the effect of selenium doping on the ordering of GalnP2
inferredcites →https://doi.org/10.1007/bf02658912openalex-snapshot
The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony
inferredcites →https://doi.org/10.1007/bf02659168openalex-snapshot
Liquid phase epitaxial growth of GaxIn1−xP
inferredcites →https://doi.org/10.1007/bf02661191openalex-snapshot
The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPE
inferredcites →https://doi.org/10.1007/bf02671225openalex-snapshot
Ordering and disordering of doped Ga0.5In0.5P
inferredcites →https://doi.org/10.1007/s11664-000-0106-4openalex-snapshot
Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAs
inferredcites →https://doi.org/10.1007/s11664-000-0108-2openalex-snapshot
Surfactant effects of dopants on ordering in GaInP
inferredcites →https://doi.org/10.1007/s11664-000-0160-yopenalex-snapshot
MOCVD growth of GaBN on 6H-SiC (0001) substrates
inferredcites →https://doi.org/10.1016/0022-0248(74)90416-3openalex-snapshot
Calculation of ternary and quaternary III–V phase diagrams
inferredcites →https://doi.org/10.1016/0022-0248(79)90109-xopenalex-snapshot
Nitrogen doping profiles in gallium phosphide grown by liquid phase epitaxy
inferredcites →https://doi.org/10.1016/0022-0248(83)90156-2openalex-snapshot
OMVPE growth of GaAs1-xSbx: solid composition
inferredcites →https://doi.org/10.1016/0022-0248(83)90300-7openalex-snapshot
Thermodynamic aspects of organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/0022-0248(84)90405-6openalex-snapshot
A critical appraisal of growth mechanisms in MOVPE
inferredcites →https://doi.org/10.1016/0022-0248(85)90225-8openalex-snapshot
Crystal growth of GaP doped with nitrogen under high nitrogen pressure
inferredcites →https://doi.org/10.1016/0022-0248(86)90290-3openalex-snapshot
Complex flow phenomena in MOCVD reactors
inferredcites →https://doi.org/10.1016/0022-0248(86)90325-8openalex-snapshot
Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
inferredcites →https://doi.org/10.1016/0022-0248(86)90381-7openalex-snapshot
Gas phase depletion and flow dynamics in horizontal MOCVD reactors
inferredcites →https://doi.org/10.1016/0022-0248(87)90091-1openalex-snapshot
Anisotropic lateral growth in GaAs MOCVD layers on (001) substrates
inferredcites →https://doi.org/10.1016/0022-0248(87)90329-0openalex-snapshot
Solid composition of GaAs1-xPx grown by organometallic vapour phase epitaxy
inferredcites →https://doi.org/10.1016/0022-0248(90)90065-sopenalex-snapshot
Organometallic vapor phase epitaxial growth of a new quarternary semiconductor alloy Ga1−xInxP1−ySby
inferredcites →https://doi.org/10.1016/0022-0248(91)90190-gopenalex-snapshot
Effect of growth rate on properties of Ga 0.51 In 0.49 P grown by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/0022-0248(91)90191-7openalex-snapshot
GaInP/AlGaInP strained quantum wells grown using atmospheric pressure organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/0022-0248(91)90739-ropenalex-snapshot
The radial flow planetary reactor: low pressure versus atmospheric pressure MOVPE
inferredcites →https://doi.org/10.1016/0022-0248(94)91041-3openalex-snapshot
Order/disorder heterostructure in Ga0.5In0.5P with ΔEg = 160 meV
inferredcites →https://doi.org/10.1016/0022-0248(95)00255-3openalex-snapshot
InTlSb growth by OMVPE
inferredcites →https://doi.org/10.1016/0022-0248(95)01051-3openalex-snapshot
Optical characterization of surfaces during epitaxial growth using RDS and GIXS
inferredcites →https://doi.org/10.1016/0022-0248(95)01054-8openalex-snapshot
Step structure during OMVPE growth of ordered GaInP
inferredcites →https://doi.org/10.1016/0022-3697(72)90075-3openalex-snapshot
Calculation of ternary phase diagrams of III–V systems
inferredcites →https://doi.org/10.1016/0040-6090(93)90702-qopenalex-snapshot
Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures
inferredcites →https://doi.org/10.1016/b978-0-12-553350-8.50007-5openalex-snapshot
Elastic and Piezoelectric Constants
inferredcites →https://doi.org/10.1016/b978-0-444-51386-1.x5001-6openalex-snapshot
Crystal Growth - From Fundamentals to Technology
inferredcites →https://doi.org/10.1016/c2009-0-22426-3openalex-snapshot
Materials Fundamentals of Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1016/j.apsusc.2006.03.076openalex-snapshot
The electron counting rule and passivation of compound semiconductor surfaces
inferredcites →https://doi.org/10.1016/j.crhy.2018.03.001openalex-snapshot
Historical perspective on the physics of artificial lighting
inferredcites →https://doi.org/10.1016/j.jallcom.2018.04.287openalex-snapshot
Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition
inferredcites →https://doi.org/10.1016/j.jcrysgro.2003.10.082openalex-snapshot
Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2003.12.037openalex-snapshot
Development and current status of organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2004.02.019openalex-snapshot
Sb and Bi surfactant effects on homo-epitaxy of GaAs on () patterned substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.10.089openalex-snapshot
Zn enhancement during surfactant-mediated growth of GaInP and GaP
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.10.060openalex-snapshot
Fundamental chemistry and modeling of group-III nitride MOVPE
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.10.061openalex-snapshot
In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.10.072openalex-snapshot
BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.10.077openalex-snapshot
Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.12.034openalex-snapshot
Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1−ySby films grown via metalorganic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2007.01.012openalex-snapshot
A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growth
inferredcites →https://doi.org/10.1016/j.jcrysgro.2007.12.039openalex-snapshot
GaAs1−xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.07.097openalex-snapshot
Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.08.009openalex-snapshot
Influence of GaInP ordering on the electronic quality of concentrator solar cells
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.08.021openalex-snapshot
The critical thickness of InGaN on (0001)GaN
inferredcites →https://doi.org/10.1016/j.jcrysgro.2009.10.031openalex-snapshot
Enhanced cation-substituted p-type doping in GaP from dual surfactant effects
inferredcites →https://doi.org/10.1016/j.jcrysgro.2009.12.018openalex-snapshot
Microstructures produced during the epitaxial growth of InGaN alloys
inferredcites →https://doi.org/10.1016/j.jcrysgro.2010.07.031openalex-snapshot
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2010.08.029openalex-snapshot
Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2010.08.042openalex-snapshot
Deep structural analysis of novel BGaN material layers grown by MOVPE
inferredcites →https://doi.org/10.1016/j.jcrysgro.2010.09.017openalex-snapshot
Growth of the active zone in nitride based long wavelength laser structures
inferredcites →https://doi.org/10.1016/j.jcrysgro.2012.07.035openalex-snapshot
Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
inferredcites →https://doi.org/10.1016/j.jcrysgro.2013.04.003openalex-snapshot
Effect of surfactant Sb on In incorporation and thin film morphology of InGaN layers grown by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2014.03.041openalex-snapshot
Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
inferredcites →https://doi.org/10.1016/j.jcrysgro.2014.10.041openalex-snapshot
Effect of antimony on growth mode and properties of thick InGaN layers
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.11.021openalex-snapshot
Domains of molecular beam epitaxial growth of Ga(In)AsBi on GaAs and InP substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.12.011openalex-snapshot
Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.12.012openalex-snapshot
Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.12.024openalex-snapshot
MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.12.032openalex-snapshot
Efficient nitrogen incorporation in GaAs using novel metal organic As–N precursor di-tertiary-butyl-arsano-amine (DTBAA)
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.12.034openalex-snapshot
Surfactant antimony enhanced indium incorporation on InGaN ( 0001¯ ) surface: A DFT study
inferredcites →https://doi.org/10.1016/j.jcrysgro.2017.03.003openalex-snapshot
Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0 0 1) substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2017.04.005openalex-snapshot
Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE
inferredcites →https://doi.org/10.1016/j.jcrysgro.2018.10.007openalex-snapshot
Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
inferredcites →https://doi.org/10.1016/j.mssp.2016.07.011openalex-snapshot
On the chemical homogeneity of InxGa1−xN alloys – Electron microscopy at the edge of technical limits
inferredcites →https://doi.org/10.1016/j.pcrysgrow.2016.04.019openalex-snapshot
III-V compound semiconductors: Growth and structures
inferredcites →https://doi.org/10.1016/j.solmat.2008.07.014openalex-snapshot
Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems
inferredcites →https://doi.org/10.1016/j.solmat.2015.09.047openalex-snapshot
The reduction of antiphase boundary defects by the surfactant antimony and its application to the III–V multi-junction solar cells
inferredcites →https://doi.org/10.1016/j.solmat.2015.11.036openalex-snapshot
Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells
inferredcites →https://doi.org/10.1016/j.surfrep.2008.03.001openalex-snapshot
Surface reconstructions on GaAs(001)
inferredcites →https://doi.org/10.1016/j.tsf.2008.04.062openalex-snapshot
Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy
inferredcites →https://doi.org/10.1016/j.ultramic.2017.01.019openalex-snapshot
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
inferredcites →https://doi.org/10.1016/s0022-0248(00)00640-0openalex-snapshot
Surface processes in OMVPE – the frontiers
inferredcites →https://doi.org/10.1016/s0022-0248(00)00829-0openalex-snapshot
Lateral OMVPE growth of GaAs on patterned substrates
inferredcites →https://doi.org/10.1016/s0022-0248(00)00869-1openalex-snapshot
Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model
inferredcites →https://doi.org/10.1016/s0022-0248(02)01419-7openalex-snapshot
Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/s0022-0248(96)00535-0openalex-snapshot
Thermodynamic analysis of the MOVPE growth of In Ga1−N
inferredcites →https://doi.org/10.1016/s0022-0248(97)00078-xopenalex-snapshot
Solubility of nitrogen in binary III–V systems
inferredcites →https://doi.org/10.1016/s0022-0248(98)00398-4openalex-snapshot
Effect of P precursor on surface structure and ordering in GaInP
inferredcites →https://doi.org/10.1016/s0022-0248(98)00558-2openalex-snapshot
Effect of Te doping on step structure and ordering in GaInP
inferredcites →https://doi.org/10.1016/s0022-0248(98)00653-8openalex-snapshot
Influence of Ga precursor choice on ordering degree of MOVPE grown Ga0.5In0.5P
inferredcites →https://doi.org/10.1016/s0039-6028(97)01310-1openalex-snapshot
Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition
inferredcites →https://doi.org/10.1016/s0039-6028(98)80032-0openalex-snapshot
Thermodynamic evidence for surfactant behaviour of Sb in the growth of Ge on Si(001)
inferredcites →https://doi.org/10.1016/s0921-5107(01)00712-7openalex-snapshot
Fundamental aspects of organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/s0927-796x(02)00002-5openalex-snapshot
The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
inferredcites →https://doi.org/10.1016/s1386-9477(02)00309-0openalex-snapshot
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
inferredcites →https://doi.org/10.1017/cbo9780511710377.051openalex-snapshot
On the Equilibrium of Heterogeneous Substances
inferredcites →https://doi.org/10.1021/acs.nanolett.5b01107openalex-snapshot
In Situ Characterization of Nanowire Dimensions and Growth Dynamics by Optical Reflectance
inferredcites →https://doi.org/10.1021/acs.nanolett.5b04072openalex-snapshot
Wedding Cake Growth Mechanism in One-Dimensional and Two-Dimensional Nanostructure Evolution
inferredcites →https://doi.org/10.1021/acs.nanolett.6b03795openalex-snapshot
InxGa1–xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc
inferredcites →https://doi.org/10.1021/acsnano.6b07732openalex-snapshot
Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys
inferredcites →https://doi.org/10.1021/ja02242a004openalex-snapshot
THE ADSORPTION OF GASES ON PLANE SURFACES OF GLASS, MICA AND PLATINUM.
inferredcites →https://doi.org/10.1021/nl048825kopenalex-snapshot
Role of Surface Diffusion in Chemical Beam Epitaxy of InAs Nanowires
inferredcites →https://doi.org/10.1023/a:1019641611417openalex-snapshot
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
inferredcites →https://doi.org/10.1038/srep42221openalex-snapshot
Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis
inferredcites →https://doi.org/10.1063/1.100287openalex-snapshot
Transmission electron microscopic study of the ordered structure in GaInP/GaAs epitaxially grown by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.104612openalex-snapshot
Structure of the Sb-terminated Si(100) surface
inferredcites →https://doi.org/10.1063/1.105751openalex-snapshot
Ordering effects on the electrical characteristics of Ga0.5In0.5P grown by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.109640openalex-snapshot
Band-gap narrowing in ordered Ga0.47In0.53As
inferredcites →https://doi.org/10.1063/1.112219openalex-snapshot
Kinetically controlled order/disorder structure in GaInP
inferredcites →https://doi.org/10.1063/1.113252openalex-snapshot
High dislocation densities in high efficiency GaN-based light-emitting diodes
inferredcites →https://doi.org/10.1063/1.114340openalex-snapshot
Band-gap reduction and valence-band splitting of ordered GaInP2
inferredcites →https://doi.org/10.1063/1.114860openalex-snapshot
Surface dimerization induced CuPtB versus CuPtA ordering of GaInP alloys
inferredcites →https://doi.org/10.1063/1.117683openalex-snapshot
Solid phase immiscibility in GaInN
inferredcites →https://doi.org/10.1063/1.118630openalex-snapshot
Bowing parameter of the band-gap energy of GaNxAs1−x
inferredcites →https://doi.org/10.1063/1.119232openalex-snapshot
Band gaps of GaPN and GaAsN alloys
inferredcites →https://doi.org/10.1063/1.119690openalex-snapshot
Enhanced Sb segregation in surfactant-mediated-heteroepitaxy: High-mobility, low-doped Ge on Si
inferredcites →https://doi.org/10.1063/1.121160openalex-snapshot
Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots
inferredcites →https://doi.org/10.1063/1.121933openalex-snapshot
Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.122251openalex-snapshot
Influence of tellurium doping on step bunching of GaAs(001) vicinal surfaces grown by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.122931openalex-snapshot
Quantum wells due to ordering in GaInP
inferredcites →https://doi.org/10.1063/1.124869openalex-snapshot
Band-gap control of GaInP using Sb as a surfactant
inferredcites →https://doi.org/10.1063/1.125016openalex-snapshot
High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
inferredcites →https://doi.org/10.1063/1.126057openalex-snapshot
The use of a surfactant (Sb) to induce triple period ordering in GaInP
inferredcites →https://doi.org/10.1063/1.126058openalex-snapshot
BGaInAs alloys lattice matched to GaAs
inferredcites →https://doi.org/10.1063/1.126453openalex-snapshot
Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy
inferredcites →https://doi.org/10.1063/1.1289478openalex-snapshot
Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.1371790openalex-snapshot
Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.1380244openalex-snapshot
Structural properties of a GaNxP1−x alloy: Raman studies
inferredcites →https://doi.org/10.1063/1.1420573openalex-snapshot
Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.1450053openalex-snapshot
Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs
inferredcites →https://doi.org/10.1063/1.1494469openalex-snapshot
The anomalous bandgap bowing in GaAsN
inferredcites →https://doi.org/10.1063/1.1495891openalex-snapshot
The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.1606105openalex-snapshot
Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells
inferredcites →https://doi.org/10.1063/1.1644910openalex-snapshot
Boron alloying in GaN
inferredcites →https://doi.org/10.1063/1.1657442openalex-snapshot
Step Motion on Crystal Surfaces. II
inferredcites →https://doi.org/10.1063/1.1661737openalex-snapshot
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
inferredcites →https://doi.org/10.1063/1.1715139openalex-snapshot
The use of nitrogen to disorder GaInP
inferredcites →https://doi.org/10.1063/1.1726787openalex-snapshot
Atomic View of Surface Self-Diffusion: Tungsten on Tungsten
inferredcites →https://doi.org/10.1063/1.1757020openalex-snapshot
Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment
inferredcites →https://doi.org/10.1063/1.1791327openalex-snapshot
Compositional dependence of phase separation in InGaN layers
inferredcites →https://doi.org/10.1063/1.1830687openalex-snapshot
Effect of Bi surfactant on atomic ordering of GaAsSb
inferredcites →https://doi.org/10.1063/1.2008365openalex-snapshot
Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots
inferredcites →https://doi.org/10.1063/1.2133920openalex-snapshot
Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.2187953openalex-snapshot
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N∕GaN high electron mobility transistors
inferredcites →https://doi.org/10.1063/1.2227707openalex-snapshot
Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy
inferredcites →https://doi.org/10.1063/1.2560954openalex-snapshot
Structural properties of Bi-stabilized reconstructions of GaInAs(100) surface
inferredcites →https://doi.org/10.1063/1.2734507openalex-snapshot
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
inferredcites →https://doi.org/10.1063/1.2751909openalex-snapshot
Fundamentals of Vapor Phase Epitaxial Growth Processes
inferredcites →https://doi.org/10.1063/1.2751920openalex-snapshot
Surfactants in Semiconductor Epitaxy
inferredcites →https://doi.org/10.1063/1.2778635openalex-snapshot
Effects of low surfactant Sb coverage on Zn and C incorporation in GaP
inferredcites →https://doi.org/10.1063/1.2800797openalex-snapshot
White light-emitting diodes based on a single InGaN emission layer
inferredcites →https://doi.org/10.1063/1.2801385openalex-snapshot
eneSurfactant effects associated with Te-doped InPAs alloys
inferredcites →https://doi.org/10.1063/1.2973456openalex-snapshot
Dependence of spectral behavior in an InGaN/GaN quantum-well light-emitting diode on the prestrained barrier thickness
inferredcites →https://doi.org/10.1063/1.2986140openalex-snapshot
Evidence of compositional inhomogeneity in InxGa1−xN alloys using ultraviolet and visible Raman spectroscopy.
inferredcites →https://doi.org/10.1063/1.2988497openalex-snapshot
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
inferredcites →https://doi.org/10.1063/1.3202409openalex-snapshot
Correlation of crystalline defects with photoluminescence of InGaN layers
inferredcites →https://doi.org/10.1063/1.322064openalex-snapshot
Preparation and optical properties of Ga1−xInxN thin films
inferredcites →https://doi.org/10.1063/1.3266175openalex-snapshot
Ordering induced direct-indirect transformation in unstrained GaxIn1−xP for 0.76≤x≤0.78
inferredcites →https://doi.org/10.1063/1.326630openalex-snapshot
Growth and dissolution kinetics of III-V heterostructures formed by LPE
inferredcites →https://doi.org/10.1063/1.329007openalex-snapshot
AlGaAs grown by metalorganic chemical vapor deposition for visible laser
inferredcites →https://doi.org/10.1063/1.332713openalex-snapshot
Determination of the nitrogen doping of liquid phase epitaxy GaP and GaxIn1−xP alloys by optical absorption and photoluminescence
inferredcites →https://doi.org/10.1063/1.3453563openalex-snapshot
Evolution of phase separation in In-rich InGaN alloys
inferredcites →https://doi.org/10.1063/1.346218openalex-snapshot
Comparative study of atomic ordering and alloy clustering in InGaP crystals grown by metalorganic vapor phase epitaxy, chloride-vapor phase epitaxy, and liquid phase epitaxy
inferredcites →https://doi.org/10.1063/1.347177openalex-snapshot
Modeling of two-junction, series-connected tandem solar cells using top-cell thickness as an adjustable parameter
inferredcites →https://doi.org/10.1063/1.348398openalex-snapshot
Atomic ordering in GaAsP
inferredcites →https://doi.org/10.1063/1.351982openalex-snapshot
Disorder/order/disorder Ga0.5In0.5P visible light-emitting diodes
inferredcites →https://doi.org/10.1063/1.355759openalex-snapshot
Effects of substrate misorientation and growth rate on ordering in GaInP
inferredcites →https://doi.org/10.1063/1.356179openalex-snapshot
InAsSbBi alloys grown by organometallic vapor-phase epitaxy
inferredcites →https://doi.org/10.1063/1.3581894openalex-snapshot
Thermal stability of amorphous GaN1−xAsx alloys
inferredcites →https://doi.org/10.1063/1.358659openalex-snapshot
Microstructures of (In,Ga)P alloys grown on GaAs by metalorganic vapor-phase epitaxy
inferredcites →https://doi.org/10.1063/1.361430openalex-snapshot
Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP
inferredcites →https://doi.org/10.1063/1.3630018openalex-snapshot
Band structure properties of novel BxGa1−xP alloys for silicon integration
inferredcites →https://doi.org/10.1063/1.364205openalex-snapshot
Effect of growth rate on step structure and ordering in GaInP
inferredcites →https://doi.org/10.1063/1.3662927openalex-snapshot
Phase separation in strained epitaxial InGaN islands
inferredcites →https://doi.org/10.1063/1.366580openalex-snapshot
Step structure and ordering in GaInP
inferredcites →https://doi.org/10.1063/1.368251openalex-snapshot
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.368372openalex-snapshot
Step structure and ordering in Te-doped GaInP
inferredcites →https://doi.org/10.1063/1.369719openalex-snapshot
Te doping of GaInP: Ordering and step structure
inferredcites →https://doi.org/10.1063/1.370997openalex-snapshot
Step structure and ordering in Zn-doped GaInP
inferredcites →https://doi.org/10.1063/1.372408openalex-snapshot
Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.4812363openalex-snapshot
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
inferredcites →https://doi.org/10.1063/1.4818477openalex-snapshot
Amber-green light-emitting diodes using order-disorder AlxIn1−xP heterostructures
inferredcites →https://doi.org/10.1063/1.4825124openalex-snapshot
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
inferredcites →https://doi.org/10.1063/1.4891990openalex-snapshot
Trade-off between morphology, extended defects, and compositional fluctuation induced carrier localization in high In-content InGaN films
inferredcites →https://doi.org/10.1063/1.4901446openalex-snapshot
Raman spectroscopy of GaP/GaNP core/shell nanowires
inferredcites →https://doi.org/10.1063/1.4962640openalex-snapshot
Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.4971998openalex-snapshot
Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys
inferredcites →https://doi.org/10.1063/1.5034083openalex-snapshot
1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
inferredcites →https://doi.org/10.1063/1.98062openalex-snapshot
Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy
inferredcites →https://doi.org/10.1063/1.99558openalex-snapshot
Disordering of the ordered structure in metalorganic chemical vapor deposition grown Ga0.5In0.5P on (001) GaAs substrates by zinc diffusion
inferredcites →https://doi.org/10.1080/14786430701342172openalex-snapshot
Does In form In-rich clusters in InGaN quantum wells?
inferredcites →https://doi.org/10.1088/0022-3727/43/35/354002openalex-snapshot
White light emitting diodes with super-high luminous efficacy
inferredcites →https://doi.org/10.1088/0022-3727/48/40/403001openalex-snapshot
Yellow–red emission from (Ga,In)N heterostructures
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