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Self‐Driven Metal–Semiconductor–Metal WSe 2 Photodetector with Asymmetric Contact Geometries
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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inferredcites →https://doi.org/10.1103/physrevb.87.165409openalex-snapshot
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inferredcites →https://doi.org/10.1109/led.2007.904337openalex-snapshot
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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inferred← citeshttps://doi.org/10.1016/j.optmat.2022.112056openalex-snapshot
Mg-doped tailoring of Zinc oxide for UV-photodetection application
inferred← citeshttps://doi.org/10.1016/j.physe.2025.116281openalex-snapshot
Synthesis, characterization, and self-powered UV photodetection properties of GaS
inferred← citeshttps://doi.org/10.1016/j.physleta.2021.127586openalex-snapshot
A simple-structured silicon photodetector possessing asymmetric Schottky junction for NIR imaging
inferred← citeshttps://doi.org/10.1016/j.pmatsci.2019.100573openalex-snapshot
Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition
inferred← citeshttps://doi.org/10.1016/j.sna.2024.115727openalex-snapshot
Quasi-dry layer transfer of few-layer MBE-grown MoTe2 sheets for optoelectronic applications
inferred← citeshttps://doi.org/10.1016/j.snb.2020.127700openalex-snapshot
NOx gas sensors based on layer-transferred n-MoS2/p-GaN heterojunction at room temperature: Study of UV light illuminations and humidity
inferred← citeshttps://doi.org/10.1016/j.solener.2020.06.067openalex-snapshot
Large area, broadband and highly sensitive photodetector based on ZnO-WS2/Si heterojunction
inferred← citeshttps://doi.org/10.1016/j.surfin.2024.104996openalex-snapshot
High-efficiency photocatalyst and high-response ultraviolet photodetector based on the Ga2SSe@GaN heterojunctions
inferred← citeshttps://doi.org/10.1016/j.surfin.2026.109535openalex-snapshot
Nearly 4 in. Single-oriented WSe2 films on Si via in situ selenization for self-powered, ultrabroadband photodetection
inferred← citeshttps://doi.org/10.1021/acs.nanolett.3c01259openalex-snapshot
Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts
inferred← citeshttps://doi.org/10.1021/acs.nanolett.3c01866openalex-snapshot
Ultimate Limit in Optoelectronic Performances of Monolayer WSe 2 Sloping-Channel Transistors
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c00757openalex-snapshot
Liquid-Metal-Based Spin-Coating Exfoliation for Atomically Thin Metal Oxide Synthesis
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5c06235openalex-snapshot
Low-Temperature Growth of High-Quality Bi 2 O 2 Se Nanosheets Enabling Weak-Light Detection with Ultralow Dark Current
inferred← citeshttps://doi.org/10.1021/acsaelm.2c01362openalex-snapshot
Ga 2 O 3 /GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00614openalex-snapshot
Millimeter-Sized Layered GeI2 Single Crystals as a Promising Platform for Broadband Photodetectors
inferred← citeshttps://doi.org/10.1021/acsaelm.4c01124openalex-snapshot
Selectively Al 2 O 3 Passivated WSe 2 /GaN Heterostructure for Ultralow-Noise High-Speed Broadband Photodetection
inferred← citeshttps://doi.org/10.1021/acsaelm.4c01338openalex-snapshot
Geometry-Derived Asymmetric Schottky Contacts Based on Chemical Vapor Deposited MoS2
inferred← citeshttps://doi.org/10.1021/acsaelm.4c02144openalex-snapshot
Salt-Templated Epitaxy and Transfer of Single-Crystal 2D Bi2O2Se Nanosheets for High-Performance Broadband Photodetectors
inferred← citeshttps://doi.org/10.1021/acsaelm.5c00334openalex-snapshot
Self-Driven PbI2-Based Ultraviolet Photodetectors with Ultrafast Response
inferred← citeshttps://doi.org/10.1021/acsaelm.5c01320openalex-snapshot
Effect of Temperature on the Optoelectrical Properties of Photodetectors Based on Mo(S X Se 1– X ) 2 Alloys
inferred← citeshttps://doi.org/10.1021/acsaelm.5c02282openalex-snapshot
Artificial Vision Synapse with Improved Temperature Stability Enabled by Ag/MoTe 2 /Graphene Vertical Heterojunction for Enhanced Photodetection and Synaptic Plasticity
inferred← citeshttps://doi.org/10.1021/acsaem.5c01899openalex-snapshot
Self-Powered Photodetector Based on p(Cu2O)–n(MoO3) Junction Architecture: Analyzing the Influence of Depletion Region Width on the Photodetector Properties
inferred← citeshttps://doi.org/10.1021/acsami.1c01773openalex-snapshot
Planar Multilayered 2D GeAs Schottky Photodiode for High-Performance Visible–Near-Infrared Photodetection
inferred← citeshttps://doi.org/10.1021/acsami.1c12330openalex-snapshot
Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect
inferred← citeshttps://doi.org/10.1021/acsami.1c20499openalex-snapshot
Efficient Suppression of Charge Recombination in Self-Powered Photodetectors with Band-Aligned Transferred van der Waals Metal Electrodes
inferred← citeshttps://doi.org/10.1021/acsami.2c08827openalex-snapshot
Type-I Heterostructure Based on WS 2 /PtS 2 for High-Performance Photodetectors
inferred← citeshttps://doi.org/10.1021/acsami.3c07709openalex-snapshot
Polarization-Sensitive, Self-Powered, and Broadband Semimetal MoTe 2 /MoS 2 van der Waals Heterojunction for Photodetection and Imaging
inferred← citeshttps://doi.org/10.1021/acsami.3c14331openalex-snapshot
Self-Driven Gr/WSe2/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts
inferred← citeshttps://doi.org/10.1021/acsami.3c16047openalex-snapshot
Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts
inferred← citeshttps://doi.org/10.1021/acsami.4c01481openalex-snapshot
Photostimulated Pyrothermoelectric Coupling in Two-Dimensional Tin Monoselenide Enabling Zero-Biased Multimodal Transducers
inferred← citeshttps://doi.org/10.1021/acsami.4c17285openalex-snapshot
PdSe 2 /NbSe 2 Heterojunction Photodetector with Broadband Detection and Polarization Sensitivity
inferred← citeshttps://doi.org/10.1021/acsami.5c01347openalex-snapshot
Plasmonic Hot-Electron Effect Enhanced WSe2 Based Transistor Based on Asymmetric Schottky Contacts for Self-Powered Photodetection and Visual Synapse
inferred← citeshttps://doi.org/10.1021/acsami.5c10990openalex-snapshot
Boosting the Self-Driven Properties of 2D Photodetectors through Synergistic Asymmetrical Effects
inferred← citeshttps://doi.org/10.1021/acsami.5c13157openalex-snapshot
2D Vertical Heterojunction with Codirectional Built-in Electric Fields and Plasmonic Hot-Electron Effect for Broadband Photodetection and Low-Power Visual Synapses
inferred← citeshttps://doi.org/10.1021/acsami.5c18475openalex-snapshot
Multifunctional WS 2 –Au Field-Effect Transistors with Asymmetrical Contact for High Self-Driven Photoresponsivity and Ultrasensitive NO 2 Sensing
inferred← citeshttps://doi.org/10.1021/acsami.5c22790openalex-snapshot
Ultrasensitive Self-Powered UV Photodetector Based on a Ti/n-4H-SiC/n ++ -4H-SiC Double Junction
inferred← citeshttps://doi.org/10.1021/acsami.5c25342openalex-snapshot
Reverse-Flow-Suppressed Chemical Vapor Deposition Growth of Bi 2 O 2 Se Nanosheets: Nanoscale Charge-Transport Analysis and High-Responsivity Photodetection
inferred← citeshttps://doi.org/10.1021/acsami.6c13881openalex-snapshot
Temperature-Regulated Growth of Thickness-Modulated Bi2O2Se Lateral Homojunctions for Self-Powered Broadband Photodetection
inferred← citeshttps://doi.org/10.1021/acsami.9b07891openalex-snapshot
Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level
inferred← citeshttps://doi.org/10.1021/acsanm.2c03264openalex-snapshot
Charge Separation in Monolayer WSe2 by Strain Engineering: Implications for Strain-Induced Diode Action
inferred← citeshttps://doi.org/10.1021/acsanm.2c04283openalex-snapshot
Normally Off WSe2 Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping
inferred← citeshttps://doi.org/10.1021/acsanm.3c03183openalex-snapshot
Two-Dimensional MoS2 on p-Type GaN for UV–Vis Photodetectors
inferred← citeshttps://doi.org/10.1021/acsaom.3c00181openalex-snapshot
Dual-Polarity Switching in Self-Powered Ag/MoS2/Ag Photodetectors
inferred← citeshttps://doi.org/10.1021/acsaom.4c00042openalex-snapshot
MoS2 / WS2 Nanosheets and Quantum Dots for Sensing Hemin and Fabrication of Self-Powered Photodetectors
inferred← citeshttps://doi.org/10.1021/acsaom.6c00114openalex-snapshot
Anisotropic MoTe 2 /NbSe 2 Interface-Engineered Vertical Heterojunction for Broadband and High-Performance Polarized Photodetection
inferred← citeshttps://doi.org/10.1021/acsnano.2c00435openalex-snapshot
Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium
inferred← citeshttps://doi.org/10.1021/acsnano.2c08542openalex-snapshot
Self-Powered Bidirectional Photoresponse in High-Detectivity WSe 2 Phototransistor with Asymmetrical van der Waals Stacking for Retinal Neurons Emulation
inferred← citeshttps://doi.org/10.1021/acsnano.4c10392openalex-snapshot
Switchable Photovoltaic Effect Induced by Light Intensity
inferred← citeshttps://doi.org/10.1021/acsnano.5c05791openalex-snapshot
Bioinspired Target Detection Pipeline Based on Two-Dimensional Optoelectronic van der Waals Heterostructures
inferred← citeshttps://doi.org/10.1021/acsnano.5c12376openalex-snapshot
Asymmetric Contact van der Waals Ferroelectric Transistors for Self-Powered Multifunctional Artificial Visual System
inferred← citeshttps://doi.org/10.1021/acsphotonics.3c00654openalex-snapshot
Nature of Photoconductivity in Self-Powered Single-Atomic-Layered Nb-Doped WSe2 Phototransistors
inferred← citeshttps://doi.org/10.1021/acsphotonics.4c01586openalex-snapshot
Self-Powered and Broadband Optical Synapse Device Based on Se-Vacancy Bi2O2Se for Artificial Vision System Application
inferred← citeshttps://doi.org/10.1021/acsphotonics.4c02218openalex-snapshot
Quasi-Two-Dimensional CsPbBr3 Quantum Dot Superlattice/WS2 Hybrid Photodetector: Self-Assembly Fabrication and Performance Optimization
inferred← citeshttps://doi.org/10.1038/s41427-019-0145-7openalex-snapshot
Direct synthesis of two-dimensional MoS2 on p-type Si and application to solar hydrogen production
inferred← citeshttps://doi.org/10.1038/s41467-022-35278-2openalex-snapshot
Ultrasensitive rapid cytokine sensors based on asymmetric geometry two-dimensional MoS2 diodes
inferred← citeshttps://doi.org/10.1038/s41699-021-00219-yopenalex-snapshot
Gas-mediated liquid metal printing toward large-scale 2D semiconductors and ultraviolet photodetector
inferred← citeshttps://doi.org/10.1039/c9nr03441bopenalex-snapshot
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits
inferred← citeshttps://doi.org/10.1039/c9nr04270aopenalex-snapshot
Layer-dependent dielectric and optical properties of centimeter-scale 2D WSe 2 : evolution from a single layer to few layers
inferred← citeshttps://doi.org/10.1039/d0nr00517gopenalex-snapshot
An asymmetric contact-induced self-powered 2D In 2 S 3 photodetector towards high-sensitivity and fast-response
inferred← citeshttps://doi.org/10.1039/d0nr01326aopenalex-snapshot
Breaking symmetry in device design for self-driven 2D material based photodetectors
inferred← citeshttps://doi.org/10.1039/d1nr05975kopenalex-snapshot
A nanomesh electrode for self-driven perovskite photodetectors with tunable asymmetric Schottky junctions
inferred← citeshttps://doi.org/10.1039/d1nr07884dopenalex-snapshot
Zero power infrared sensing in 2D/3D-assembled heterogeneous graphene/In/InSe/Au
inferred← citeshttps://doi.org/10.1039/d1ta08892kopenalex-snapshot
Light-material interfaces for self-powered optoelectronics
inferred← citeshttps://doi.org/10.1039/d1tc00949dopenalex-snapshot
Recent developments in the photodetector applications of Schottky diodes based on 2D materials
inferred← citeshttps://doi.org/10.1039/d1tc02820kopenalex-snapshot
A progressive journey into 2D-chalcogenide/carbide/nitride-based broadband photodetectors: recent developments and future perspectives
inferred← citeshttps://doi.org/10.1039/d2cp03364jopenalex-snapshot
Substrate effects on the speed limiting factor of WSe 2 photodetectors
inferred← citeshttps://doi.org/10.1039/d2mh00721eopenalex-snapshot
Defect-suppressed submillimeter-scale WS 2 single crystals with high photoluminescence quantum yields by alternate-growth-etching CVD
inferred← citeshttps://doi.org/10.1039/d2mh00872fopenalex-snapshot
Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures
inferred← citeshttps://doi.org/10.1039/d2se01410fopenalex-snapshot
CuBi 2 O 4 nanocrystals integrated with polyaniline nanobelt arrays for weak light photomultiplication type photodetector
inferred← citeshttps://doi.org/10.1039/d2ta00075jopenalex-snapshot
Recent progress on Schottky sensors based on two-dimensional transition metal dichalcogenides
inferred← citeshttps://doi.org/10.1039/d3ma01152fopenalex-snapshot
Advancements in transition metal dichalcogenides (TMDCs) for self-powered photodetectors: challenges, properties, and functionalization strategies
inferred← citeshttps://doi.org/10.1039/d3nr02331aopenalex-snapshot
A fully printed ultrafast Si/WS 2 quantum dot photodetector with very high responsivity over the UV to near-infrared region
inferred← citeshttps://doi.org/10.1039/d3nr06118copenalex-snapshot
Asymmetric contact-induced selective doping of CVD-grown bilayer WS 2 and its application in high-performance photodetection with an ultralow dark current
inferred← citeshttps://doi.org/10.1039/d4cp02099eopenalex-snapshot
Self-formed asymmetric Schottky contacts between graphene and WSiGeN 4
inferred← citeshttps://doi.org/10.1039/d4nr02638aopenalex-snapshot
Advances in borophene based photodetectors for a sustainable tomorrow: a comprehensive review
inferred← citeshttps://doi.org/10.1039/d4nr03543gopenalex-snapshot
New paradigms of 2D layered material self-driven photodetectors
inferred← citeshttps://doi.org/10.1039/d4tc04349aopenalex-snapshot
Ferroelectric polarization-modulated two-dimensional homojunctions for enhanced nonvolatile multistate memory with self-powered optical readout capacity
inferred← citeshttps://doi.org/10.1039/d5nr03378kopenalex-snapshot
Advances in visible and ultraviolet self-powered photodetectors: exploring 2D materials and Janus heterostructures
inferred← citeshttps://doi.org/10.1039/d5tc01545fopenalex-snapshot
Recent progress of optoelectronic applications based on 2D WSe 2 nanomaterials and heterostructures: a review
inferred← citeshttps://doi.org/10.1063/1.5074181openalex-snapshot
A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications
inferred← citeshttps://doi.org/10.1063/1.5140795openalex-snapshot
2D group 6 transition metal dichalcogenides toward wearable electronics and optoelectronics
inferred← citeshttps://doi.org/10.1063/5.0020771openalex-snapshot
Self-driven photodetector based on a GaSe/MoSe2 selenide van der Waals heterojunction with the hybrid contact
inferred← citeshttps://doi.org/10.1063/5.0035275openalex-snapshot
Gate-tunable the interface properties of GaAs–WSe2 (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector
inferred← citeshttps://doi.org/10.1063/5.0061633openalex-snapshot
Dual-band plasmon-enhanced and bias-dependent responsivity in a flask-shaped Ge nanowire photodetector with Au grating
inferred← citeshttps://doi.org/10.1063/5.0087379openalex-snapshot
Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
inferred← citeshttps://doi.org/10.1063/5.0149922openalex-snapshot
Thickness modulation of incline-grown Bi2O2Se for the construction of high-performance phototransistors
inferred← citeshttps://doi.org/10.1063/5.0188558openalex-snapshot
In situ grown large-size highly crystalline black phosphorus thin film for self-driven photodetector
inferred← citeshttps://doi.org/10.1063/5.0212957openalex-snapshot
Enhanced self-powered metal–semiconductor–metal WSe2 photodetectors with asymmetric Schottky contacts through tailored electrode thickness and positioning
inferred← citeshttps://doi.org/10.1063/5.0254860openalex-snapshot
Optical anisotropy in WS2/ReS2 heterostructure with one-dimensional moiré pattern
inferred← citeshttps://doi.org/10.1063/5.0255413openalex-snapshot
Consistent reporting of performances in Ga2O3 UV-C photodetectors
inferred← citeshttps://doi.org/10.1063/5.0266251openalex-snapshot
MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse
inferred← citeshttps://doi.org/10.1063/5.0275907openalex-snapshot
Room-temperature broadband THz detection at zero bias in layered WSe2
inferred← citeshttps://doi.org/10.1063/5.0287238openalex-snapshot
Engineering polarization anisotropy in WSe2/CrOCl heterostructures via magnetic and strain effects
inferred← citeshttps://doi.org/10.1063/5.0313609openalex-snapshot
Violet phosphorus: Synthesis, fundamental properties, and emerging applications
inferred← citeshttps://doi.org/10.1080/10408436.2023.2289928openalex-snapshot
Performance analysis of photodetectors based on 2D materials and heterostructures
inferred← citeshttps://doi.org/10.1088/1361-6463/abae35openalex-snapshot
Two-dimensional metal halides
inferred← citeshttps://doi.org/10.1088/1361-6463/abae36openalex-snapshot
Solar-blind photodetectors based on MXenes– β -Ga 2 O 3 Schottky junctions
inferred← citeshttps://doi.org/10.1088/1361-6528/abf77aopenalex-snapshot
MoS 2 /WSe 2 nanohybrids for flexible paper-based photodetectors
inferred← citeshttps://doi.org/10.1088/1361-6528/acca8bopenalex-snapshot
Multilayer WSe2/ZnO heterojunctions for self-powered, broadband, and high-speed photodetectors
inferred← citeshttps://doi.org/10.1088/1361-6633/ade006openalex-snapshot
A homogenous polymer design with widely tunable work functions for high-performance two-dimensional photodetectors
inferred← citeshttps://doi.org/10.1088/1402-4896/acf3b4openalex-snapshot
Highly-rectified hybrid p-MAPbBr3/n-GaN heterojunction ultraviolet photodetector featuring high-photoresponse
inferred← citeshttps://doi.org/10.1088/2043-6262/ac5cb6openalex-snapshot
A Review on MX2 (M = Mo, W and X = S, Se) layered material for opto-electronic devices
inferred← citeshttps://doi.org/10.1088/2053-1583/ab6d33openalex-snapshot
Photodetection application of one-step synthesized wafer-scale monolayer MoS 2 by chemical vapor deposition
inferred← citeshttps://doi.org/10.1088/2053-1583/ad0404openalex-snapshot
Controllable growth of wafer-scale two-dimensional WS2 with outstanding optoelectronic properties
inferred← citeshttps://doi.org/10.1088/2053-1591/ab4496openalex-snapshot
Enhance near infrared performance of n-type vertically aligned MoS2 flakes photodetector with active p-type CZTS electrodes
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