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A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
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Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
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Nanoscale Memristor Device as Synapse in Neuromorphic Systems
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Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
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Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
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Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
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2024 IEEE International Memory Workshop (IMW)
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IEEE International Solid-State Circuits Conference (ISSCC 2011)
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$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
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2010 IEEE International Electron Devices Meeting (IEDM)
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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
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On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy
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Efficient Hybrid CMOS-Nano Circuit Design for Spiking Neurons and Memristive Synapses with STDP
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Elements of Artificial Neural Networks
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Synaptic behavior in analog memristors based on green-synthesized ZnO nanoparticles
inferred← citeshttps://doi.org/10.1016/j.ceramint.2024.07.035openalex-snapshot
Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing
inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.07.213openalex-snapshot
Enhanced synaptic performance in hafnia-based ferroelectric memristors with MIFS structure for neuromorphic computing
inferred← citeshttps://doi.org/10.1016/j.chip.2022.100031openalex-snapshot
Advanced synaptic devices and their applications in biomimetic sensory neural system
inferred← citeshttps://doi.org/10.1016/j.colsurfa.2024.133673openalex-snapshot
A ZTO-based memristor with tunable synaptic plasticity
inferred← citeshttps://doi.org/10.1016/j.healthplace.2025.103548openalex-snapshot
Community insights into societal causes of and solutions for schistosomiasis transmission in Lake Albert fishing villages: A participatory approach
inferred← citeshttps://doi.org/10.1016/j.jallcom.2016.08.032openalex-snapshot
Quantum conductance and magnetic properties in ZnO based resistive switching memory
inferred← citeshttps://doi.org/10.1016/j.jallcom.2018.05.092openalex-snapshot
Mimicking synaptic plasticity and learning behaviours in solution processed SnO2 memristor
inferred← citeshttps://doi.org/10.1016/j.jallcom.2018.07.044openalex-snapshot
The resistive switching characteristics of Ni-doped HfO film and its application as a synapse
inferred← citeshttps://doi.org/10.1016/j.jallcom.2019.05.114openalex-snapshot
Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface
inferred← citeshttps://doi.org/10.1016/j.jallcom.2020.154434openalex-snapshot
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
inferred← citeshttps://doi.org/10.1016/j.jallcom.2022.168539openalex-snapshot
Demonstration of electronic and optical synaptic properties modulation of reactively sputtered zinc-oxide-based artificial synapses
inferred← citeshttps://doi.org/10.1016/j.jallcom.2025.182700openalex-snapshot
Polarization-controlled memristive synapse characteristics of HfZrO2-based ferroelectric switchable diode
inferred← citeshttps://doi.org/10.1016/j.jmrt.2022.09.095openalex-snapshot
Quantized synaptic characteristics in HfO2-nanocrystal based resistive switching memory
inferred← citeshttps://doi.org/10.1016/j.jmst.2014.04.015openalex-snapshot
Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO2 Films
inferred← citeshttps://doi.org/10.1016/j.jmst.2015.10.018openalex-snapshot
Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review
inferred← citeshttps://doi.org/10.1016/j.jmst.2024.05.078openalex-snapshot
Enhanced memory window and efficient resistive switching in stabilized BaTiO3-based RRAM through incorporation of Al2O3 interlayer
inferred← citeshttps://doi.org/10.1016/j.jmst.2025.11.025openalex-snapshot
Dual-state conversion for high-entropy and reconfigurable resistive memory-based physically unclonable functions
inferred← citeshttps://doi.org/10.1016/j.mattod.2023.09.003openalex-snapshot
ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses
inferred← citeshttps://doi.org/10.1016/j.mattod.2026.103262openalex-snapshot
Advance design for brain-inspired flexible computing: Materials, structures, models to applications
inferred← citeshttps://doi.org/10.1016/j.mee.2015.04.052openalex-snapshot
Synaptic potentiation and depression in Al:HfO2-based memristor
inferred← citeshttps://doi.org/10.1016/j.mee.2017.11.003openalex-snapshot
Conduction mechanisms, dynamics and stability in ReRAMs
inferred← citeshttps://doi.org/10.1016/j.mee.2018.01.009openalex-snapshot
Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks
inferred← citeshttps://doi.org/10.1016/j.mee.2019.110984openalex-snapshot
Controlling the intermediate conductance states in RRAM devices for synaptic applications
inferred← citeshttps://doi.org/10.1016/j.mee.2019.110988openalex-snapshot
Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications
inferred← citeshttps://doi.org/10.1016/j.mejo.2020.104725openalex-snapshot
Efficient Hybrid CMOS/Memristor Implementation of Bidirectional Associative Memory Using Passive Weight Array
inferred← citeshttps://doi.org/10.1016/j.mser.2026.101184openalex-snapshot
3-dimensional multistate memristor structures based neuromorphic devices for high-density in-memory computing
inferred← citeshttps://doi.org/10.1016/j.mssp.2021.106123openalex-snapshot
Emulation of multiple-functional synapses using V2C memristors with coexistence of resistive and threshold switching
inferred← citeshttps://doi.org/10.1016/j.mtadv.2025.100556openalex-snapshot
Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli
inferred← citeshttps://doi.org/10.1016/j.mtphys.2021.100393openalex-snapshot
Synaptic devices based neuromorphic computing applications in artificial intelligence
inferred← citeshttps://doi.org/10.1016/j.nanoen.2020.104628openalex-snapshot
Moisture-powered memristor with interfacial oxygen migration for power-free reading of multiple memory states
inferred← citeshttps://doi.org/10.1016/j.nanoen.2024.109891openalex-snapshot
Skin-like n-type stretchable synaptic transistors with low energy consumption and highly reliable plasticity for brain-inspired computing
inferred← citeshttps://doi.org/10.1016/j.nantod.2025.102633openalex-snapshot
Optically-modulated and mechanically-flexible MXene artificial synapses with visible-to-near IR broadband-responsiveness
inferred← citeshttps://doi.org/10.1016/j.neucom.2018.09.019openalex-snapshot
Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics
inferred← citeshttps://doi.org/10.1016/j.neunet.2018.08.012openalex-snapshot
Sign backpropagation: An on-chip learning algorithm for analog RRAM neuromorphic computing systems
inferred← citeshttps://doi.org/10.1016/j.orgel.2017.02.004openalex-snapshot
Spatially-correlated neuron transistors with ion-gel gating for brain-inspired applications
inferred← citeshttps://doi.org/10.1016/j.pnsc.2015.01.005openalex-snapshot
Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide
inferred← citeshttps://doi.org/10.1016/j.procs.2014.11.094openalex-snapshot
Parallel Programming of Resistive Cross-point Array for Synaptic Plasticity
inferred← citeshttps://doi.org/10.1016/j.ssc.2015.01.003openalex-snapshot
Multi-bit nonvolatile logic implemented with metal-oxide based resistive switching device
inferred← citeshttps://doi.org/10.1016/j.sse.2022.108321openalex-snapshot
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations
inferred← citeshttps://doi.org/10.1016/j.sse.2023.108606openalex-snapshot
Stochastic switching of memristors and consideration in circuit simulation
inferred← citeshttps://doi.org/10.1016/j.ssi.2016.09.001openalex-snapshot
Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices
inferred← citeshttps://doi.org/10.1016/j.ssi.2017.01.030openalex-snapshot
Analog and digital Reset processes observed in Pt/CuO/Pt memristive devices
inferred← citeshttps://doi.org/10.1016/j.ssi.2021.115746openalex-snapshot
Optimizing linearity of weight updating in TaO -based memristors by depression pulse scheme for neuromorphic computing
inferred← citeshttps://doi.org/10.1016/j.surfin.2022.102014openalex-snapshot
Exploring the crucial influence on the electrical rectification of ZnO films
inferred← citeshttps://doi.org/10.1021/acs.chemmater.0c03112openalex-snapshot
Realizing Scalable Two-Dimensional MoS2Synaptic Devices for Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acs.chemrev.9b00730openalex-snapshot
Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems
inferred← citeshttps://doi.org/10.1021/acs.inorgchem.1c01439openalex-snapshot
Memristors Based on an Iridium(III) Complex Containing Viologen for Advanced Synaptic Bionics
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5b03283openalex-snapshot
Graphene Dynamic Synapse with Modulatable Plasticity
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5c04587openalex-snapshot
Optical Neuromorphic Computing Based on Reconfigurable Excitonic Devices
inferred← citeshttps://doi.org/10.1021/acs.nanolett.6b01781openalex-snapshot
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application
inferred← citeshttps://doi.org/10.1021/acs.nanolett.8b01526openalex-snapshot
K-means Data Clustering with Memristor Networks
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00128openalex-snapshot
Compliance Current-Controlled Conducting Filament Formation in Tantalum Oxide-Based RRAM Devices with Different Top Electrodes
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00499openalex-snapshot
One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices
inferred← citeshttps://doi.org/10.1021/acsaelm.1c01021openalex-snapshot
Ultrasensitive and Degradable Ultraflexible Synaptic Transistors Based on Natural Pectin
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00161openalex-snapshot
Versatile Functionality of Four-Terminal TiO2–x Memristive Devices as Artificial Synapses for Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00131openalex-snapshot
Trade-off between Gradual Set and On/Off Ratio in HfO x -Based Analog Memory with a Thin SiO x Barrier Layer
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01323openalex-snapshot
Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01343openalex-snapshot
Plasma-Enhanced Atomic Layer Deposition of Titanium Oxynitride (TiOxNy) Thin Films and Their Neuromorphic Applications
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01795openalex-snapshot
Replicating the Bright-Light Therapy of Seasonal Affective Disorder Using Dual-Gate Dielectric Synaptic Transistors: An Exploration of Neuromorphic Computing Approaches
inferred← citeshttps://doi.org/10.1021/acsaelm.4c01042openalex-snapshot
Multilevel Nonvolatile Memory by CMOS-Compatible and Transfer-free Amorphous Boron Nitride Film
inferred← citeshttps://doi.org/10.1021/acsaelm.5c01668openalex-snapshot
Crystallization-Induced Interface Control in Poly-Si Flash for High-Accuracy Neuromorphic Inference
inferred← citeshttps://doi.org/10.1021/acsaelm.9b00011openalex-snapshot
Binary Resistive-Switching-Device-Based Electronic Synapse with Spike-Rate-Dependent Plasticity for Online Learning
inferred← citeshttps://doi.org/10.1021/acsami.0c14325openalex-snapshot
Bienenstock–Cooper–Munro Learning Rule Realized in Polysaccharide-Gated Synaptic Transistors with Tunable Threshold
inferred← citeshttps://doi.org/10.1021/acsami.1c11866openalex-snapshot
Mixed-Halide Perovskite Film-Based Neuromorphic Phototransistors for Mimicking Experience-History-Dependent Sensory Adaptation
inferred← citeshttps://doi.org/10.1021/acsami.1c16332openalex-snapshot
Resistive Memory Devices Based on Reticular Materials for Electrical Information Storage
inferred← citeshttps://doi.org/10.1021/acsami.2c11016openalex-snapshot
Frequency-Dependent Synapse Weight Tuning in 1S1R with a Short-Term Plasticity TiOx-Based Exponential Selector
inferred← citeshttps://doi.org/10.1021/acsami.2c22754openalex-snapshot
Flexibly Photo-Regulated Brain-Inspired Functions in Flexible Neuromorphic Transistors
inferred← citeshttps://doi.org/10.1021/acsami.3c00371openalex-snapshot
Deterministic Conductive Filament Formation and Evolution for Improved Switching Uniformity in Embedded Metal-Oxide-Based Memristors─A Phase-Field Study
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