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Recent Advances of Quantum Conductance in Memristors
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adfm.201200640openalex-snapshot
Controlling the Synaptic Plasticity of a Cu2S Gap‐Type Atomic Switch
inferredcites →https://doi.org/10.1002/adfm.201600680openalex-snapshot
High‐Speed and Low‐Energy Nitride Memristors
inferredcites →https://doi.org/10.1002/adfm.201605104openalex-snapshot
Highly Reproducible and Regulated Conductance Quantization in a Polymer‐Based Atomic Switch
inferredcites →https://doi.org/10.1002/adfm.201700432openalex-snapshot
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
inferredcites →https://doi.org/10.1002/adma.200900375openalex-snapshot
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
inferredcites →https://doi.org/10.1002/adma.201100507openalex-snapshot
In Situ Observation of Voltage‐Induced Multilevel Resistive Switching in Solid Electrolyte Memory
inferredcites →https://doi.org/10.1002/adma.201103379openalex-snapshot
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor
inferredcites →https://doi.org/10.1002/adma.201104104openalex-snapshot
Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM
inferredcites →https://doi.org/10.1002/adma.201201506openalex-snapshot
Observation of Conductance Quantization in Oxide‐Based Resistive Switching Memory
inferredcites →https://doi.org/10.1002/adma.201204097openalex-snapshot
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
inferredcites →https://doi.org/10.1002/adma.201602976openalex-snapshot
Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies
inferredcites →https://doi.org/10.1002/adma.201702162openalex-snapshot
A 1D Vanadium Dioxide Nanochannel Constructed via Electric‐Field‐Induced Ion Transport and its Superior Metal–Insulator Transition
inferredcites →https://doi.org/10.1002/adma.201705193openalex-snapshot
Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
inferredcites →https://doi.org/10.1002/adma.201801225openalex-snapshot
Quasi‐Solid‐State Single‐Atom Transistors
inferredcites →https://doi.org/10.1002/aelm.201500370openalex-snapshot
Amorphous‐Si‐Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window
inferredcites →https://doi.org/10.1002/aelm.201600233openalex-snapshot
Controllable Formation of Nanofilaments in Resistive Memories via Tip‐Enhanced Electric Fields
inferredcites →https://doi.org/10.1007/s00339-011-6264-9openalex-snapshot
Resistance switching memories are memristors
inferredcites →https://doi.org/10.1007/s10008-012-1890-5openalex-snapshot
Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
inferredcites →https://doi.org/10.1016/j.carbon.2015.04.031openalex-snapshot
Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon
inferredcites →https://doi.org/10.1016/j.mser.2014.06.002openalex-snapshot
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
inferredcites →https://doi.org/10.1016/j.stam.2007.08.002openalex-snapshot
Control of local ion transport to create unique functional nanodevices based on ionic conductors
inferredcites →https://doi.org/10.1016/s0022-3093(05)80164-4openalex-snapshot
Quantised electron effects in metal/a-Si:H/metal thin film structures
inferredcites →https://doi.org/10.1021/acs.nanolett.5b04296openalex-snapshot
A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States
inferredcites →https://doi.org/10.1021/acs.nanolett.5b04537openalex-snapshot
Atomic Scale Plasmonic Switch
inferredcites →https://doi.org/10.1021/acs.nanolett.7b00400openalex-snapshot
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
inferredcites →https://doi.org/10.1021/acsami.7b19586openalex-snapshot
Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application
inferredcites →https://doi.org/10.1021/acsnano.8b01811openalex-snapshot
Atomic Scale Photodetection Enabled by a Memristive Junction
inferredcites →https://doi.org/10.1021/am403497yopenalex-snapshot
Analog Memristors Based on Thickening/Thinning of Ag Nanofilaments in Amorphous Manganite Thin Films
inferredcites →https://doi.org/10.1021/jp305482copenalex-snapshot
Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
inferredcites →https://doi.org/10.1021/nl501249qopenalex-snapshot
Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon
inferredcites →https://doi.org/10.1021/nl802438copenalex-snapshot
Independently Switchable Atomic Quantum Transistors by Reversible Contact Reconstruction
inferredcites →https://doi.org/10.1021/nl900006gopenalex-snapshot
Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
inferredcites →https://doi.org/10.1021/nn401212popenalex-snapshot
Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes
inferredcites →https://doi.org/10.1038/nature03190openalex-snapshot
Quantized conductance atomic switch
inferredcites →https://doi.org/10.1038/ncomms11142openalex-snapshot
Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
inferredcites →https://doi.org/10.1038/ncomms15173openalex-snapshot
Probing nanoscale oxygen ion motion in memristive systems
inferredcites →https://doi.org/10.1038/ncomms1737openalex-snapshot
Observation of conducting filament growth in nanoscale resistive memories
inferredcites →https://doi.org/10.1038/ncomms2784openalex-snapshot
Nanobatteries in redox-based resistive switches require extension of memristor theory
inferredcites →https://doi.org/10.1038/ncomms5232openalex-snapshot
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
inferredcites →https://doi.org/10.1038/nmat3054openalex-snapshot
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
inferredcites →https://doi.org/10.1038/nmat3070openalex-snapshot
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
inferredcites →https://doi.org/10.1038/nmat3307openalex-snapshot
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
inferredcites →https://doi.org/10.1038/nnano.2009.456openalex-snapshot
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
inferredcites →https://doi.org/10.1038/nnano.2012.240openalex-snapshot
Memristive devices for computing
inferredcites →https://doi.org/10.1038/nnano.2015.221openalex-snapshot
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
inferredcites →https://doi.org/10.1038/nnano.2016.55openalex-snapshot
Metallic, magnetic and molecular nanocontacts
inferredcites →https://doi.org/10.1038/s41563-017-0001-5openalex-snapshot
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
inferredcites →https://doi.org/10.1038/s41565-018-0302-0openalex-snapshot
Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
inferredcites →https://doi.org/10.1038/srep02708openalex-snapshot
Quantum Conductance in Silicon Oxide Resistive Memory Devices
inferredcites →https://doi.org/10.1038/srep13311openalex-snapshot
Atomic View of Filament Growth in Electrochemical Memristive Elements
inferredcites →https://doi.org/10.1038/srep27451openalex-snapshot
Real-time device-scale imaging of conducting filament dynamics in resistive switching materials
inferredcites →https://doi.org/10.1039/c4tc01984aopenalex-snapshot
Voltage sweep modulated conductance quantization in oxide nanocomposites
inferredcites →https://doi.org/10.1039/c8nr01540fopenalex-snapshot
Silicon compatible Sn-based resistive switching memory
inferredcites →https://doi.org/10.1063/1.110459openalex-snapshot
Room temperature conductance quantization in V‖amorphous-V2O5‖V thin film structures
inferredcites →https://doi.org/10.1063/1.120928openalex-snapshot
Quantum transport in metallic nanowires fabricated by electrochemical deposition/dissolution
inferredcites →https://doi.org/10.1063/1.2164918openalex-snapshot
Quantum point-contact switches using silver particles
inferredcites →https://doi.org/10.1063/1.322942openalex-snapshot
Polarity-dependent memory switching and behavior of Ag dendrite in Ag-photodoped amorphous As2S3 films
inferredcites →https://doi.org/10.1063/1.3621835openalex-snapshot
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
inferredcites →https://doi.org/10.1063/1.3683523openalex-snapshot
Mechanism for resistive switching in an oxide-based electrochemical metallization memory
inferredcites →https://doi.org/10.1063/1.4728118openalex-snapshot
Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures
inferredcites →https://doi.org/10.1063/1.4733356openalex-snapshot
Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices
inferredcites →https://doi.org/10.1063/1.4802092openalex-snapshot
Formation process of conducting filament in planar organic resistive memory
inferredcites →https://doi.org/10.1063/1.4802265openalex-snapshot
Quantum-size effects in hafnium-oxide resistive switching
inferredcites →https://doi.org/10.1063/1.4816747openalex-snapshot
Conductance quantization in oxygen-anion-migration-based resistive switching memory devices
inferredcites →https://doi.org/10.1063/1.4893277openalex-snapshot
Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
inferredcites →https://doi.org/10.1063/1.4963263openalex-snapshot
Conductance quantization in an AgInSbTe-based memristor at nanosecond scale
inferredcites →https://doi.org/10.1088/0022-3727/46/24/245107openalex-snapshot
Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology
inferredcites →https://doi.org/10.1088/0022-3727/49/44/445105openalex-snapshot
Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu/ZrO 2 /Pt devices
inferredcites →https://doi.org/10.1088/0034-4885/75/7/076502openalex-snapshot
Emerging memories: resistive switching mechanisms and current status
inferredcites →https://doi.org/10.1088/0957-4484/10/2/320openalex-snapshot
Fabrication of stable metallic nanowires with quantized conductance
inferredcites →https://doi.org/10.1088/0957-4484/20/21/215201openalex-snapshot
The mechanism of electroforming of metal oxide memristive switches
inferredcites →https://doi.org/10.1088/0957-4484/22/28/289502openalex-snapshot
Electrochemical metallization memories—fundamentals, applications, prospects
inferredcites →https://doi.org/10.1088/0957-4484/22/48/485203openalex-snapshot
Sub-nanosecond switching of a tantalum oxide memristor
inferredcites →https://doi.org/10.1088/0957-4484/23/14/145703openalex-snapshot
Quantum conductance and switching kinetics of AgI-based microcrossbar cells
inferredcites →https://doi.org/10.1088/0957-4484/23/43/435705openalex-snapshot
Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch
inferredcites →https://doi.org/10.1088/0957-4484/24/33/335201openalex-snapshot
Conductance quantization in a Ag filament-based polymer resistive memory
inferredcites →https://doi.org/10.1088/0957-4484/25/42/425204openalex-snapshot
Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films
inferredcites →https://doi.org/10.1088/1361-6528/aa5bafopenalex-snapshot
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory
inferredcites →https://doi.org/10.1103/physrevb.53.1042openalex-snapshot
Observation of conductance quantization of ballistic metallic point contacts at room temperature
inferredcites →https://doi.org/10.1103/physrevlett.60.848openalex-snapshot
Quantized conductance of point contacts in a two-dimensional electron gas
inferredcites →https://doi.org/10.1103/physrevlett.72.2251openalex-snapshot
Quantized conductance in an atom-sized point contact
inferredcites →https://doi.org/10.1109/jssc.2004.837244openalex-snapshot
A nonvolatile programmable solid-electrolyte nanometer switch
inferredcites →https://doi.org/10.1109/led.2010.2046310openalex-snapshot
Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions
inferredcites →https://doi.org/10.1109/led.2011.2177803openalex-snapshot
Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells
inferredcites →https://doi.org/10.1109/led.2013.2282154openalex-snapshot
High ON/OFF Ratio and Quantized Conductance in Resistive Switching of ${\rm TiO}_{2}$ on Silicon
inferredcites →https://doi.org/10.1109/tct.1971.1083337openalex-snapshot
Memristor-The missing circuit element
inferredcites →https://doi.org/10.1109/tnano.2015.2411774openalex-snapshot
Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells
inferredcites →https://doi.org/10.1147/rd.13.0223openalex-snapshot
Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction
inferredcites →https://doi.org/10.1186/s11671-015-1118-6openalex-snapshot
Conductance Quantization in Resistive Random Access Memory
inferredcites →https://doi.org/10.1557/mrs.2012.2openalex-snapshot
Resistive switching phenomena in thin films: Materials, devices, and applications
inferredcites →https://doi.org/10.48550/arxiv.1804.09848openalex-snapshot
Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials
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inferred← citeshttps://doi.org/10.1002/adma.202104023openalex-snapshot
Natural Acidic Polysaccharide‐Based Memristors for Transient Electronics: Highly Controllable Quantized Conductance for Integrated Memory and Nonvolatile Logic Applications
inferred← citeshttps://doi.org/10.1002/adma.202201248openalex-snapshot
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications
inferred← citeshttps://doi.org/10.1002/adma.202311472openalex-snapshot
Neuromorphic Nanoionics for Human–Machine Interaction: From Materials to Applications
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Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain
inferred← citeshttps://doi.org/10.1002/aelm.201901055openalex-snapshot
Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor
inferred← citeshttps://doi.org/10.1002/aelm.202101059openalex-snapshot
Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory
inferred← citeshttps://doi.org/10.1002/aelm.202500159openalex-snapshot
Quantized Conductance and Multilevel Memory Operation in Mn 3 O 4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching
inferred← citeshttps://doi.org/10.1002/aisy.202200455openalex-snapshot
Intrinsic Decay Property of Ti/TiOx/Pt Memristor for Reinforcement Learning
inferred← citeshttps://doi.org/10.1002/inf2.12120openalex-snapshot
Recent advances in organic‐based materials for resistive memory applications
inferred← citeshttps://doi.org/10.1002/qute.202000009openalex-snapshot
Memristive Devices for Quantum Metrology
inferred← citeshttps://doi.org/10.1002/qute.202300048openalex-snapshot
Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard
inferred← citeshttps://doi.org/10.1007/s12043-023-02547-8openalex-snapshot
L-Histidine-based computation devices
inferred← citeshttps://doi.org/10.1007/s40843-020-1380-5openalex-snapshot
Resistive-switching tunability with size-dependent all-inorganic zero-dimensional tetrahedrite quantum dots
inferred← citeshttps://doi.org/10.1016/j.comptc.2023.114449openalex-snapshot
Computational study of conductance through Cu, Ag, Au and Pt atomic chain contacts
inferred← citeshttps://doi.org/10.1016/j.flatc.2024.100755openalex-snapshot
Sustainable vertically-oriented graphene-electrode memristors for neuromorphic applications
inferred← citeshttps://doi.org/10.1016/j.jallcom.2019.151957openalex-snapshot
Physically transient memristor based on the permeation of water at the interface of electrode and substrate
inferred← citeshttps://doi.org/10.1016/j.matt.2021.02.018openalex-snapshot
Self-assembling crystalline peptide microrod for neuromorphic function implementation
inferred← citeshttps://doi.org/10.1016/j.mtcomm.2024.108464openalex-snapshot
Phase-field model of filament formation and growth in percolating memristive systems of nanoparticles
inferred← citeshttps://doi.org/10.1016/j.orgel.2019.06.052openalex-snapshot
On the resistive switching mechanism of parylene-based memristive devices
inferred← citeshttps://doi.org/10.1021/acs.jpclett.3c02898openalex-snapshot
Ga 2 O 3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention
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Low-Power Bidirectional Threshold Switching Characteristics of Ambient-Stable Rb18Cu31Cl49─Poly(methyl methacrylate) Composite Memristor Devices
inferred← citeshttps://doi.org/10.1021/acsami.0c04872openalex-snapshot
Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered K-Birnessite Nanosheets
inferred← citeshttps://doi.org/10.1021/acsami.4c07820openalex-snapshot
Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties
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Dynamic Behaviors and Training Effects in TiN/Ti/HfOx/TiN-Nanolayered Memristors with Controllable Quantized Conductance States: Implications for Quantum and Neuromorphic Computing Devices
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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
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A quantum resistance memristor for an intrinsically traceable International System of Units standard
inferred← citeshttps://doi.org/10.1038/s41598-023-49924-2openalex-snapshot
Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
inferred← citeshttps://doi.org/10.1039/c9tc06948hopenalex-snapshot
Scaled conductance quantization unravels the switching mechanism in organic ternary resistive memories
inferred← citeshttps://doi.org/10.1039/d0cp03767bopenalex-snapshot
Magnetism modulation and conductance quantization in a gadolinium oxide memristor
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Conductive-bridging random-access memories for emerging neuromorphic computing
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Quantized conductance behaviour observed in an atomic switch using triptycene-based polymers
inferred← citeshttps://doi.org/10.1039/d3nh00476gopenalex-snapshot
Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires
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AgBiS 2 quantum dot based multilevel resistive switching for low power electronics
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Nanoionics enabled atomic point contact construction and quantum conductance effects
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HfO2/TiOx bilayer structure memristor with linear conductance tuning for high density memory and neuromorphic computing
inferred← citeshttps://doi.org/10.1063/5.0053702openalex-snapshot
Improved uniformity in resistive switching behaviors based on PMMA films with embedded carbon quantum dots
inferred← citeshttps://doi.org/10.1063/5.0068090openalex-snapshot
Conductance quantization control and neuromorphic properties in Pt-nanoparticle incorporated HfAlOx alloy memristor
inferred← citeshttps://doi.org/10.1063/5.0187642openalex-snapshot
Heterogeneous integrated InP/SiC high-performance multilevel RRAM
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Memristor-integrated sensing systems leveraging quantum conductance effect for artificial bioelectronics
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Quantum point contacts for multifunctional sensing
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Nanoionics driven reconfigurable heterojunctions for advanced information devices
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Atomic scale switches based on solid state ionics
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Quantized conductance in MoS2 memristors for high-accuracy neuromorphic computing
inferred← citeshttps://doi.org/10.1088/1361-6528/ac2e22openalex-snapshot
Quantum conductors formation and resistive switching memory effects in zirconia nanotubes
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Approaching the Ballistic Transport Limit in Single Crystalline Au
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Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition
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Mesoscopic Theory of Resistive Switching
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Quantum Conductance and Temperature Effects in Titanium Oxide-Based Memristive Devices
inferred← citeshttps://doi.org/10.1134/s0012501623600262openalex-snapshot
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inferred← citeshttps://doi.org/10.1134/s0021364022603323openalex-snapshot
Effects of Quantum Recoil Forces in Resistive Switching in Memristors
inferred← citeshttps://doi.org/10.1134/s1063776120070109openalex-snapshot
Transport Properties of Magnetic Nanogranular Composites with Dispersed Ions in an Insulating Matrix
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Effects of quantum recoil forces in resistive switching in memristors
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A Quantized Convolutional Neural Network Implemented With Memristor for Image Denoising and Recognition
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Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices
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Improving the Recognition Accuracy of Memristive Neural Networks via Homogenized Analog Type Conductance Quantization
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Unveiling the analogies between the atomic switch and NMDA receptor-based signal transmission of biological synapse
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