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The metal-semiconductor transition in amorphous Si1-xCrxfilms. II. Range of validity of the scaling behaviour of the conductivity, (T,x)= (T/T0(x)), in the semiconducting region and determination of the minimum metallic conductivity from (T,x) in the metallic region
High-bias current voltage temperature characteristics of undoped rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon heterojunctions
New theoretical method to design quasi-atomic systems in the band gap of semiconductors by combining density functional theory (DFT) and the Hubbard effective Hamiltonian : an application to alpha (α) boron
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