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Increasing the Energy Gap between Band‐Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

https://doi.org/10.1002/smll.202102792
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Outgoing claims: the papers this work cites, builds on, or argues with.

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What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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