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Lattice parameter study of silicon uniformly doped with boron and phosphorus
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Solid Solubilities of Impurity Elements in Germanium and Silicon*
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Resistivity of Bulk Silicon and of Diffused Layers in Silicon
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Precision lattice parameter studies of ion-implanted silicon
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A Strategy for Rapid and Accurate (p.p.m.) Measurement of Lattice Parameters of Single Crystals by Bond’s Method
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Detailed analysis of thin phosphorus-diffused layers in p-type silicon
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X-ray measurement of elastic strain and lattice constant of diffused silicon
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The lattice contraction coefficient of boron and phosphorus in silicon
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The Continuum Theory of Lattice Defects
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The Elastic Constants of Crystals
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The nature of the chemical bond—1992
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Measurement of the Lattice Parameter of Silicon, using a Double-diffraction Effect
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Carrier Profile Change for Phosphorus-Diffused Layers on Low-Temperature Heat Treatment
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Electrical Properties of Heavily Doped Silicon
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Precision Lattice Constants from X-Ray Powder Photographs
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An $aring$ngstr$ouml$m ruler
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An experimental investigation of extrapolation methods in the derivation of accurate unit-cell dimensions of crystals
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Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
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Densitometric and Electrical Investigation of Boron in Silicon
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Precision lattice constant determination
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Results of the IUCr precision lattice-parameter project
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Refinement of the crystal structure of black phosphorus
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International Tables for X-ray Crystallography
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Improved Techniques of Lattice Parameter Measurements Using two X-Ray Beams
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Precise Cell Parameters of Semiconductor Crystals and their Applications
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Precision measurement and fundamental constants
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