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Simulation design and performance study of Graphene/Mg2Si/Si heterojunction photodetector

https://doi.org/10.1007/s00339-021-04705-4

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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High Detectivity Graphene‐Silicon Heterojunction Photodetector

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Effects of annealing on the formation of Mg2Si film prepared by resistive thermal evaporation method

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Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (1 1 1) substrate deposited by magnetron sputtering

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Photoluminescence of Mg2Si films fabricated by magnetron sputtering

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SnS2/Si vertical heterostructure for high-performance photodetection with large photocurrent and fast speed

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Photo-induced selective gas detection based on reduced graphene oxide/Si Schottky diode

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Ecofriendly Mg2Si-based photodiode for short-wavelength IR sensing

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Graphene based materials: Past, present and future

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High responsivity and high-speed 1.55 μm infrared photodetector from self-powered graphene/Si heterojunction

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Enhanced Thermionic-Dominated Photoresponse in Graphene Schottky Junctions

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High-Velocity Saturation in Graphene Encapsulated by Hexagonal Boron Nitride

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Monolayer Graphene/Germanium Schottky Junction As High-Performance Self-Driven Infrared Light Photodetector

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Tunable Graphene–Silicon Heterojunctions for Ultrasensitive Photodetection

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A roadmap for graphene

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GaN nanowire ultraviolet photodetector with a graphene transparent contact

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Broadband InSb/Si heterojunction photodetector with graphene transparent electrode

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Broadband infrared photodetector based on nanostructured MoSe 2 –Si heterojunction extended up to 2.5 μ m spectral range

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Effects of La doping on Mg2Si semiconductor thin films prepared by thermal evaporation

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Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide

inferredcites →https://doi.org/10.1109/jqe.2013.2261472openalex-snapshot

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Forward Current Conduction Mechanism of Mechanically Exfoliated β -Ga 2 O 3 /GaN pn Heterojunction Diode

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Waveguide-integrated van der Waals heterostructure photodetector at telecom wavelengths with high speed and high responsivity

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TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector

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