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Structural and electronic properties of hydrogenated gallium nitride with vacancy and doping defects

https://doi.org/10.1007/s00339-022-06186-5
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Electron Energetics at Surfaces and Interfaces: Concepts and Experiments
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Exploring phononic properties of two-dimensional materials using machine learning interatomic potentials
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Magnetism in non-metal atoms adsorbed graphene-like gallium nitride monolayers
inferredcites →https://doi.org/10.1016/j.apsusc.2017.10.136openalex-snapshot
Vacancy charged defects in two-dimensional GaN
inferredcites →https://doi.org/10.1016/j.apsusc.2019.02.171openalex-snapshot
Effects of strain and surface modification on stability, electronic and optical properties of GaN monolayer
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Structural, electronic, and optical properties of the PAI-BN monolayer: A first-principles study
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Structural, electronic, and optical properties of the PhaCBNs monolayers
inferredcites →https://doi.org/10.1016/j.ssc.2013.07.028openalex-snapshot
Structural and electronic properties of nanoribbons: A first principles study
inferredcites →https://doi.org/10.1021/acs.jpcc.5b04695openalex-snapshot
Chemical Functionalization of GaN Monolayer by Adatom Adsorption
inferredcites →https://doi.org/10.1021/nl101437popenalex-snapshot
Properties of Fluorinated Graphene Films
inferredcites →https://doi.org/10.1021/nl1022139openalex-snapshot
Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
inferredcites →https://doi.org/10.1038/nature04760openalex-snapshot
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
inferredcites →https://doi.org/10.1038/nmat1134openalex-snapshot
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
inferredcites →https://doi.org/10.1038/nmat4742openalex-snapshot
Two-dimensional gallium nitride realized via graphene encapsulation
inferredcites →https://doi.org/10.1039/c5cp01732gopenalex-snapshot
Anomalous doping effect in black phosphorene using first-principles calculations
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Fermi level, work function and vacuum level
inferredcites →https://doi.org/10.1039/c7cp04117aopenalex-snapshot
Anisotropic carrier mobility in buckled two-dimensional GaN
inferredcites →https://doi.org/10.1039/c8cp02188kopenalex-snapshot
Chemical and substitutional doping, and anti-site and vacancy formation in monolayer AlN and GaN
inferredcites →https://doi.org/10.1063/1.119366openalex-snapshot
High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
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Efficient hybrid density functional calculations in solids: Assessment of the Heyd–Scuseria–Ernzerhof screened Coulomb hybrid functional
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High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
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Electronic structures of graphane sheets with foreign atom substitutions
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Local changes of work function near rough features on Cu surfaces operated under high external electric field
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Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects
inferredcites →https://doi.org/10.1103/physrev.140.a1133openalex-snapshot
Self-Consistent Equations Including Exchange and Correlation Effects
inferredcites →https://doi.org/10.1103/physrevb.13.5188openalex-snapshot
Special points for Brillouin-zone integrations
inferredcites →https://doi.org/10.1103/physrevb.43.1993openalex-snapshot
Efficient pseudopotentials for plane-wave calculations
inferredcites →https://doi.org/10.1103/physrevb.73.073108openalex-snapshot
Electronic structure and energetics of B x C y N z layered structures
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Graphane: A two-dimensional hydrocarbon
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Accurate defect levels obtained from the HSE06 range-separated hybrid functional
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Computational discovery of single-layer III-V materials
inferredcites →https://doi.org/10.1103/physrevb.93.085431openalex-snapshot
GaN: From three- to two-dimensional single-layer crystal and its multilayer van der Waals solids
inferredcites →https://doi.org/10.1103/physrevlett.48.1425openalex-snapshot
Efficacious Form for Model Pseudopotentials
inferredcites →https://doi.org/10.1103/physrevlett.77.3865openalex-snapshot
Generalized Gradient Approximation Made Simple
inferredcites →https://doi.org/10.1126/science.1102896openalex-snapshot
Electric Field Effect in Atomically Thin Carbon Films
inferredcites →https://doi.org/10.1126/science.1167130openalex-snapshot
Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
inferredcites →https://doi.org/10.1140/epjb/e2013-40270-5openalex-snapshot
Hydrogenated BN monolayers: A first principles study
inferredcites →https://doi.org/10.1140/epjb/s10051-020-00012-8openalex-snapshot
Structural and electronic properties of fluorinated boron nitride monolayers
inferredcites →https://doi.org/10.1142/9789814287005_0002openalex-snapshot
The rise of graphene
inferredcites →https://doi.org/10.1186/s11671-018-2625-zopenalex-snapshot
Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4608100openalex-extracted
Theoretical Investigation of Fluorine-Decorated Gallium Nitride Monolayers with Vacancy and Doping Defects
inferred← citeshttps://doi.org/10.1002/adts.202400626openalex-snapshot
Effect of Defects to Tailor the Structural and Electronic Properties of Zigzag GaN Nanoribbons
inferred← citeshttps://doi.org/10.1016/j.chemphys.2026.113111openalex-snapshot
Adsorption of CO, NO and H 2 S on Na-modified H-GaN: A DFT study
inferred← citeshttps://doi.org/10.1016/j.comptc.2025.115277openalex-snapshot
Enhancing the electronic and optical properties of GaN nanosheets through hydrogenation and halogenation: A DFT study
inferred← citeshttps://doi.org/10.1016/j.jece.2026.123892openalex-snapshot
Strain-sensitive gas sensor based on hydrogenated GaN monolayer: First-principles insights into temperature effects and detection limits
inferred← citeshttps://doi.org/10.1016/j.physb.2024.415666openalex-snapshot
Theoretical investigation of fluorine-decorated gallium nitride monolayers with vacancy and doping defects
inferred← citeshttps://doi.org/10.1016/j.surfin.2025.106424openalex-snapshot
Heat transfer characteristics of GaN-substrate heterointerface in GaN HEMT devices: Analysis and regulation strategies
inferred← citeshttps://doi.org/10.1088/1361-651x/adcfb7openalex-snapshot
The effect of vacancy defects on the interfacial thermal resistance at the GaN/diamond interfaces: molecular dynamics simulation
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