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Homogeneous phase W–Ge–Te material with improved overall phase-change properties for future nonvolatile memory

https://doi.org/10.1016/j.actamat.2014.03.069

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What this work says

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Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

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Performance improvement of Sb2Te3 phase change material by Al doping

inferredcites →https://doi.org/10.1016/j.sse.2005.10.046openalex-snapshot

Phase change memories: State-of-the-art, challenges and perspectives

inferredcites →https://doi.org/10.1016/j.sse.2011.06.029openalex-snapshot

Carbon-doped GeTe: A promising material for Phase-Change Memories

inferredcites →https://doi.org/10.1016/j.tsf.2009.01.128openalex-snapshot

Influence of the additive Ag for crystallization of amorphous Ge–Sb–Te thin films

inferredcites →https://doi.org/10.1016/j.tsf.2010.08.118openalex-snapshot

Bismuth doping effect on the phase-change characteristics of nitrogen-doped GeTe films

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Impurity blocking of crystal growth: a Monte Carlo study

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Reaction Kinetics in Differential Thermal Analysis

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Genetic enhancement of learning and memory in mice

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Lanthanum-substituted bismuth titanate for use in non-volatile memories

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Low-cost and nanoscale non-volatile memory concept for future silicon chips

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Phase-change materials for rewriteable data storage

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Nanoscale phase change memory materials

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Crystal structure assessment of Ge–Sb–Te phase change nanowires

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Electric-pulse-induced reversible resistance change effect in magnetoresistive films

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Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys

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In situ transmission electron microscopy study on the crystallization of GeTe binary alloy

inferredcites →https://doi.org/10.1063/1.3222851openalex-snapshot

Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences

inferredcites →https://doi.org/10.1063/1.3570636openalex-snapshot

The crystallization behavior of stoichiometric and off-stoichiometric Ga–Sb–Te materials for phase-change memory

inferredcites →https://doi.org/10.1063/1.4754138openalex-snapshot

W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

inferredcites →https://doi.org/10.1063/1.4781206openalex-snapshot

Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory

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Crystallization behavior of non-stoichiometric Ge–Bi–Te ternary phase change materials for PRAM application

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Reversible Electrical Switching Phenomena in Disordered Structures

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High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications

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Changes in Chemical and Structural Properties of Phase-Change Material GeTe with Nitrogen Doping and Annealing

inferredcites →https://doi.org/10.1143/jjap.49.100001openalex-snapshot

Current Status of Nonvolatile Semiconductor Memory Technology

inferredcites →https://doi.org/10.31399/asm.hb.v03.a0006247openalex-snapshot

Binary Alloy Phase Diagrams

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Incoming claims: where this work appears in other papers’ reference lists and arguments.

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