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Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy

https://doi.org/10.1016/j.jcrysgro.2004.01.045

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/1521-3951(200212)234:3<787::aid-pssb787>3.0.co;2-hopenalex-snapshot

Band Gap of Hexagonal InN and InGaN Alloys

inferredcites →https://doi.org/10.1007/s11664-001-0098-8openalex-snapshot

Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

inferredcites →https://doi.org/10.1016/0022-0248(74)90424-2openalex-snapshot

Defects in epitaxial multilayers I. Misfit dislocations

inferredcites →https://doi.org/10.1016/0022-0248(87)90329-0openalex-snapshot

Solid composition of GaAs1-xPx grown by organometallic vapour phase epitaxy

inferredcites →https://doi.org/10.1016/0022-0248(89)90090-0openalex-snapshot

Decomposition mechanisms of tertiarybutylarsine

inferredcites →https://doi.org/10.1016/0022-0248(93)90496-jopenalex-snapshot

The growth mechanism of 〈100〉 oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process

inferredcites →https://doi.org/10.1016/0022-0248(95)00296-0openalex-snapshot

Nitrogen precursors in metalorganic vapor phase epitaxy of (Al,Ga)N

inferredcites →https://doi.org/10.1016/s0022-0248(02)01079-5openalex-snapshot

The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.120733openalex-snapshot

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.1499753openalex-snapshot

Optical bandgap energy of wurtzite InN

inferredcites →https://doi.org/10.1063/1.364018openalex-snapshot

Dislocation motion in GaN light-emitting devices and its effect on device lifetime

inferredcites →https://doi.org/10.1063/1.369554openalex-snapshot

Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate

inferredcites →https://doi.org/10.1063/1.94874openalex-snapshot

Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5

inferredcites →https://doi.org/10.1088/0953-8984/9/1/025openalex-snapshot

Brillouin scattering study of gallium nitride: elastic stiffness constants

inferredcites →https://doi.org/10.1103/physrevb.51.10568openalex-snapshot

Electronic structure and phase stability of GaAs1−x Nx alloys

inferredcites →https://doi.org/10.1143/jjap.32.4413openalex-snapshot

Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

inferredcites →https://doi.org/10.1143/jjap.35.1273openalex-snapshot

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

inferredcites →https://doi.org/10.1143/jjap.37.1436openalex-snapshot

GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

inferredcites →https://doi.org/10.1143/jjap.42.2288openalex-snapshot

Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN

inferredcites →https://doi.org/10.1149/1.2131641openalex-snapshot

Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium Nitride

inferredcites →https://doi.org/10.1149/1.2404322openalex-snapshot

Mass Spectrometric Studies of Vapor-Phase Crystal Growth

inferredcites →https://doi.org/10.1201/9781482268065openalex-snapshot

Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

inferredcites →https://doi.org/10.1557/proc-639-g9.8openalex-snapshot

Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4628975openalex-extracted

Defect Characterization of N-Rich Ganas Tertiary Alloys

inferred← citeshttps://doi.org/10.1002/pssc.200777464openalex-snapshot

Below bandgap emission with intensity higher than band‐to‐band transition in GaAsN

inferred← citeshttps://doi.org/10.1007/s00339-013-7891-0openalex-snapshot

Bandgap evolution of GaN1−x As x in the whole composition range

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2004.08.061openalex-snapshot

Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2007.06.018openalex-snapshot

Thermal annealing effect on GaNAs epilayers with different nitrogen compositions grown by MOCVD

inferred← citeshttps://doi.org/10.1016/j.physb.2012.09.012openalex-snapshot

A model for the band gap energy of the N-rich GaN1−xAsx (0

inferred← citeshttps://doi.org/10.1016/j.vacuum.2024.113554openalex-snapshot

Defect characterizations of N-rich GaNAs ternary alloys

inferred← citeshttps://doi.org/10.1021/acs.cgd.3c01486openalex-snapshot

Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE

inferred← citeshttps://doi.org/10.1039/c6ra05706copenalex-snapshot

Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN

inferred← citeshttps://doi.org/10.1063/1.3259434openalex-snapshot

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

inferred← citeshttps://doi.org/10.1063/1.3701284openalex-snapshot

A model for the bandgap energy of the N-rich GaNAs(0 ≤ x ≤ 0.07)

inferred← citeshttps://doi.org/10.1063/5.0025371openalex-snapshot

Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

inferred← citeshttps://doi.org/10.1088/0268-1242/31/8/083001openalex-snapshot

Highly mismatched GaN 1− x Sb x alloys: synthesis, structure and electronic properties

inferred← citeshttps://doi.org/10.1088/0953-8984/18/44/009openalex-snapshot

Computational study of GaAs1−xNxand GaN1−yAsyalloys and arsenic impurities in GaN

inferred← citeshttps://doi.org/10.1103/physrevb.70.115214openalex-snapshot

Valence band hybridization in N -rich GaN1−xAsx alloys

inferred← citeshttps://doi.org/10.1109/icsict.2004.1435317openalex-snapshot

Dependence of nitrogen incorporation of GaNAs alloys to growth conditions

inferred← citeshttps://doi.org/10.1557/jmr.2009.0435openalex-snapshot

Strong below-band gap absorption of N-rich side GaNSb by metal-organic chemical vapor deposition

inferred← citeshttps://doi.org/10.7567/jjap.55.05fd01openalex-snapshot

GaNSb alloys grown with H 2 and N 2 carrier gases

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