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2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0039-6028(89)90256-2openalex-snapshot
Transformations on clean Si(111) stepped surface during sublimation
inferredcites →https://doi.org/10.1016/0039-6028(94)90698-xopenalex-snapshot
Atomic processes in crystal growth
inferredcites →https://doi.org/10.1016/0039-6028(95)00353-3openalex-snapshot
Submonolayer epitaxy without a critical nucleus
inferredcites →https://doi.org/10.1016/0039-6028(95)00930-2openalex-snapshot
Transitions in critical size for metal (100) homoepitaxy
inferredcites →https://doi.org/10.1016/0039-6028(96)00675-9openalex-snapshot
Crossover scaling during submonolayer epitaxy onvicinal substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2009.06.021openalex-snapshot
Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system
inferredcites →https://doi.org/10.1016/j.surfrep.2005.08.004openalex-snapshot
Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
inferredcites →https://doi.org/10.1016/j.susc.2004.01.047openalex-snapshot
Terrace-edge-kink model of atomic processes at the permeable steps
inferredcites →https://doi.org/10.1016/j.susc.2005.05.022openalex-snapshot
Size of small Si and Ge clusters on Si(111) and Ge(111) surfaces
inferredcites →https://doi.org/10.1016/j.susc.2013.08.017openalex-snapshot
Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7×7)-“1×1” surface phase transition
inferredcites →https://doi.org/10.1016/j.susc.2014.05.016openalex-snapshot
Kinetics of second layer nucleation with permeable steps
inferredcites →https://doi.org/10.1016/j.susc.2014.12.004openalex-snapshot
Attachment–detachment limited kinetics on ultra-flat Si(111) surface under etching with molecular oxygen at elevated temperatures
inferredcites →https://doi.org/10.1016/s0167-5729(01)00012-7openalex-snapshot
Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
inferredcites →https://doi.org/10.1088/0034-4885/47/4/002openalex-snapshot
Nucleation and growth of thin films
inferredcites →https://doi.org/10.1103/physrevb.51.7583openalex-snapshot
Modification of growth kinetics in surfactant-mediated epitaxy
inferredcites →https://doi.org/10.1103/physrevb.54.2586openalex-snapshot
Self-diffusion on Si(111) surfaces
inferredcites →https://doi.org/10.1103/physrevb.54.7709openalex-snapshot
Nucleation and growth of Si/Si(111) observed by scanning tunneling microscopy during epitaxy
inferredcites →https://doi.org/10.1103/physrevb.56.12544openalex-snapshot
Surface energetics from the transition from step-flow growth to two-dimensional nucleation in metal homoepitaxy
inferredcites →https://doi.org/10.1103/physrevb.58.1613openalex-snapshot
Self-consistent rate-equation approach to transitions in critical island size in metal (100) and metal (111) homoepitaxy
inferredcites →https://doi.org/10.1103/physrevb.60.13869openalex-snapshot
Magic islands and barriers to attachment: A Si/Si(111)7×7 growth model
inferredcites →https://doi.org/10.1103/physrevb.66.075338openalex-snapshot
Kinetic length, step permeability, and kinetic coefficient asymmetry on the Si(111) (7×7) surface
inferredcites →https://doi.org/10.1103/physrevb.69.125331openalex-snapshot
Influence of material, surface reconstruction, and strain on diffusion at the Ge(111) surface
inferredcites →https://doi.org/10.1103/physrevb.75.245419openalex-snapshot
Critical terrace width for step flow growth: Effect of attachment-detachment asymmetry and step permeability
inferredcites →https://doi.org/10.1103/physrevb.87.235430openalex-snapshot
Scaling in reversible submonolayer deposition
inferredcites →https://doi.org/10.1103/physreve.89.032406openalex-snapshot
Impact of nucleation on step-meandering instabilities during step-flow growth on vicinal surfaces
inferredcites →https://doi.org/10.1103/physrevlett.111.036105openalex-snapshot
Critical Terrace Width for Two-Dimensional Nucleation during Si Growth on Si(111)-( 7×7 ) Surface
inferredcites →https://doi.org/10.1103/physrevlett.74.3632openalex-snapshot
Simultaneous Bunching and Debunching of Surface Steps: Theory and Relation to Experiments
inferredcites →https://doi.org/10.1103/physrevlett.77.3861openalex-snapshot
Growth Processes in Si/Si(111) Epitaxy Observed by Scanning Tunneling Microscopy during Epitaxy
inferredcites →https://doi.org/10.1103/physrevlett.78.499openalex-snapshot
Initial Stages of Thin Film Growth in the Presence of Island-Edge Barriers
inferredcites →https://doi.org/10.1103/physrevlett.81.858openalex-snapshot
Magic Islands in Si/Si(111) Homoepitaxy
inferredcites →https://doi.org/10.1103/revmodphys.82.981openalex-snapshot
Crystal surfaces in and out of equilibrium: A modern view
inferredcites →https://doi.org/10.1116/1.576159openalex-snapshot
Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)-(7×7)
inferredcites →https://doi.org/10.1116/1.579894openalex-snapshot
Nucleation behavior in molecular beam and chemical vapor deposition of silicon on Si(111)-(7×7)
inferredcites →https://doi.org/10.1134/s1995078009030094openalex-snapshot
A Monte Carlo simulation of the processes of nanostructure growth: The time-scale event-scheduling algorithm
inferredcites →https://doi.org/10.1140/epjb/e2012-30884-4openalex-snapshot
Slope selection of mounds with permeable steps in homoepitaxy
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1016/b978-0-12-810512-2.00008-1openalex-snapshot
Atomic Processes on the Silicon Surface
inferred← citeshttps://doi.org/10.1016/j.apsusc.2017.12.136openalex-snapshot
Single-step fabrication of homoepitaxial silicon nanocones by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.apsusc.2020.147090openalex-snapshot
Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation
inferred← citeshttps://doi.org/10.1016/j.apsusc.2020.148269openalex-snapshot
Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium
inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.155367openalex-snapshot
Structural Transitions on Si(111) Surface During Sn Adsorption, Electromigration, and Desorption Studied by in Situ Uhv Rem
inferred← citeshttps://doi.org/10.1016/j.ijheatmasstransfer.2019.03.139openalex-snapshot
Availability analysis of two dimensional nucleation on cylindrical substrates
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2019.125347openalex-snapshot
2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2023.127291openalex-snapshot
Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2023.127545openalex-snapshot
High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2026.128553openalex-snapshot
3D/nano-island/2D growth modes in Sb-mediated Ge epitaxy on Si(111) surface
inferred← citeshttps://doi.org/10.1016/j.mtcomm.2025.111773openalex-snapshot
Formation of planar tellurium nanowire networks on substrate surfaces
inferred← citeshttps://doi.org/10.1016/j.susc.2017.09.009openalex-snapshot
On the role of mobile nanoclusters in 2D island nucleation on Si(111)-(7 × 7) surface
inferred← citeshttps://doi.org/10.1016/j.susc.2023.122418openalex-snapshot
Sn-mediated transformations on Si(111) surface: Reconstructions, Electromigration, Homoepitaxy
inferred← citeshttps://doi.org/10.1051/matecconf/201815801028openalex-snapshot
High speed video recording system on a chip for detonation jet engine testing
inferred← citeshttps://doi.org/10.1088/1742-6596/1984/1/012016openalex-snapshot
In situ reflection electron microscopy for investigation of surface processes on Bi2Se3(0001)
inferred← citeshttps://doi.org/10.1134/s1063774521040192openalex-snapshot
In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms
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