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IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures

https://doi.org/10.1016/j.mssp.2013.08.020
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adma.200400368openalex-snapshot
Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature
inferredcites →https://doi.org/10.1016/0026-0657(94)90443-xopenalex-snapshot
Applied Physics Letters
inferredcites →https://doi.org/10.1016/j.apsusc.2012.01.115openalex-snapshot
Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices
inferredcites →https://doi.org/10.1016/j.tsf.2007.03.101openalex-snapshot
Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes
inferredcites →https://doi.org/10.1016/j.tsf.2007.07.121openalex-snapshot
Investigation of sub-nm ALD aluminum oxide films by plasma assisted etch-through
inferredcites →https://doi.org/10.1016/j.tsf.2008.08.052openalex-snapshot
ALD growth, thermal treatments and characterisation of Al2O3 layers
inferredcites →https://doi.org/10.1016/s0022-3093(01)01095-xopenalex-snapshot
New challenges in thin film transistor (TFT) research
inferredcites →https://doi.org/10.1016/s0254-0584(02)00375-9openalex-snapshot
Effects of ozone as an oxygen source on the properties of the Al2O3 thin films prepared by atomic layer deposition
inferredcites →https://doi.org/10.1021/cm0304546openalex-snapshot
Low-Temperature Al 2 O 3 Atomic Layer Deposition
inferredcites →https://doi.org/10.1021/cm050704dopenalex-snapshot
Nucleation and Growth during Al 2 O 3 Atomic Layer Deposition on Polymers
inferredcites →https://doi.org/10.1038/nature03090openalex-snapshot
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
inferredcites →https://doi.org/10.1063/1.1534915openalex-snapshot
Tunable electronic lens using a gradient polymer network liquid crystal
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Modeling of transport in polycrystalline organic semiconductor films
inferredcites →https://doi.org/10.1063/1.1571960openalex-snapshot
Surface-scattering effects in polycrystalline silicon thin-film transistors
inferredcites →https://doi.org/10.1063/1.1578536openalex-snapshot
Morphology and electronic transport of polycrystalline pentacene thin-film transistors
inferredcites →https://doi.org/10.1063/1.2425020openalex-snapshot
Investigating the stability of zinc oxide thin film transistors
inferredcites →https://doi.org/10.1063/1.2990657openalex-snapshot
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
inferredcites →https://doi.org/10.1063/1.3118575openalex-snapshot
Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition
inferredcites →https://doi.org/10.1103/physrevb.66.195336openalex-snapshot
Carrier transport and density of state distributions in pentacene transistors
inferredcites →https://doi.org/10.1109/55.556089openalex-snapshot
Pentacene organic thin-film transistors-molecular ordering and mobility
inferredcites →https://doi.org/10.1109/led.2008.920965openalex-snapshot
Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory
inferredcites →https://doi.org/10.1109/ted.2008.2011679openalex-snapshot
Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance
inferredcites →https://doi.org/10.1109/ted.2011.2115248openalex-snapshot
High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide
inferredcites →https://doi.org/10.1126/science.1083212openalex-snapshot
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
inferredcites →https://doi.org/10.1126/science.268.5208.270openalex-snapshot
Organic Transistors: Two-Dimensional Transport and Improved Electrical Characteristics
inferredcites →https://doi.org/10.1143/jjap.40.297openalex-snapshot
Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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inferred← citeshttps://doi.org/10.1007/s10854-021-05512-6openalex-snapshot
Study on dielectric properties of PVP and Al2O3 thin films and their implementation in low-temperature solution-processed IGZO-based thin-film transistors
inferred← citeshttps://doi.org/10.1007/s13391-017-6214-6openalex-snapshot
Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors
inferred← citeshttps://doi.org/10.1016/j.apsusc.2021.151029openalex-snapshot
Reduction of leakage current in amorphous Oxide-Semiconductor Top-gated thin film transistors by interface engineering with dipolar Self-Assembled monolayers
inferred← citeshttps://doi.org/10.1016/j.apsusc.2021.151987openalex-snapshot
Effects of Atomic-Layer-Deposition temperature on the properties of Al2O3 insulators and InAlZnO Thin-Film-Transistors with Dual-Active-Layer structure
inferred← citeshttps://doi.org/10.1016/j.ceramint.2016.02.014openalex-snapshot
Performance enhancement in InZnO thin-film transistors with compounded ZrO2–Al2O3 nanolaminate as gate insulators
inferred← citeshttps://doi.org/10.1016/j.mee.2022.111794openalex-snapshot
Effect of the oxygen dependent device parameters on the electrical properties of a-Si-Zn-Sn-O thin film transistors
inferred← citeshttps://doi.org/10.1016/j.mee.2025.112327openalex-snapshot
Amorphous indium gallium zinc oxide thin film transistors (a-IGZO-TFTs): Exciting prospects and fabrication challenges
inferred← citeshttps://doi.org/10.1016/j.mssp.2022.106665openalex-snapshot
The influence of post-annealing temperature on indium-silicon oxide thin film transistors
inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109833openalex-snapshot
Influence of UV-ozone treatment on the performance of HfO2 films and indium aluminum zinc oxide thin film transistors
inferred← citeshttps://doi.org/10.1016/j.nxmate.2026.103709openalex-snapshot
Investigation of AZO/a-IGZO heterojunction thin film transistor fabricated by sputtering technique
inferred← citeshttps://doi.org/10.1016/j.spmi.2019.01.026openalex-snapshot
IGZO/Al2O3 based depressed synaptic transistor
inferred← citeshttps://doi.org/10.1016/j.surfin.2023.103726openalex-snapshot
Horizontally aligned ALD-SnO films grown on SiO2-passivated high-k HfO2 dielectrics for high-mobility and low-power P-channel thin-film transistor
inferred← citeshttps://doi.org/10.1021/acsaelm.1c01088openalex-snapshot
Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acsaelm.4c01380openalex-snapshot
Synergistic Effects of Deposition Temperatures for Active and Gate Insulator of Top-Gate Thin-Film Transistors Using InGaZnO Channels Prepared by Thermal Atomic-Layer Deposition
inferred← citeshttps://doi.org/10.1021/acsami.5b12058openalex-snapshot
Glucose Sensing Using Functionalized Amorphous In–Ga–Zn–O Field-Effect Transistors
inferred← citeshttps://doi.org/10.1063/1.4980153openalex-snapshot
Energy band offsets of dielectrics on InGaZnO4
inferred← citeshttps://doi.org/10.1063/1.5003662openalex-snapshot
Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric
inferred← citeshttps://doi.org/10.1088/1361-6463/ae357copenalex-snapshot
Influence of bilayer high- k Al 2 O 3 and HfO 2 gate insulators on the electrical performance of amorphous oxide thin-film transistors
inferred← citeshttps://doi.org/10.1088/1361-6641/addc8eopenalex-snapshot
Effect of high-κ oxide dielectric deposition on the electrical performance and stability of p-channel CuI-based transistors
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The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor
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Improving Reliability of IWO Thin Film Transistors with ZrAlOx via Varying AlOx/ZrOx Deposition Sequence in ALD
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High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method
inferred← citeshttps://doi.org/10.1109/jflex.2024.3471489openalex-snapshot
Comparative Analysis of Compact Modeled of Low-Voltage OTFTs on Flexible and Silicon Substrates for the Implementation of Logic Circuits
inferred← citeshttps://doi.org/10.1109/led.2016.2558665openalex-snapshot
High Performance Unannealed a-InGaZnO TFT with an Atomic-Layer-Deposited SiO2 Insulator
inferred← citeshttps://doi.org/10.1109/led.2022.3160514openalex-snapshot
High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator
inferred← citeshttps://doi.org/10.1109/lpt.2020.3039972openalex-snapshot
A Proposed All ZnO Based Thin Film Transistor For UV-B Detection
inferred← citeshttps://doi.org/10.1109/ted.2020.2978536openalex-snapshot
Low Operating Voltage Solution Processed (Li₂ZnO₂) Dielectric and (SnO₂) Channel-Based Medium Wave UV-B Phototransistor for Application in Phototherapy
inferred← citeshttps://doi.org/10.3390/app8050806openalex-snapshot
Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator
inferred← citeshttps://doi.org/10.7567/apex.11.061103openalex-snapshot
Dimethylaluminum hydride for atomic layer deposition of Al 2 O 3 passivation for amorphous InGaZnO thin-film transistors
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