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Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices

https://doi.org/10.1016/j.mtphys.2022.100777

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Physics of Semiconductor Devices

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Fundamental Properties and Power Electronic Device Progress of Gallium Oxide

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Czochralski growth and characterization of β‐Ga2O3 single crystals

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Development of gallium oxide power devices

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Fabrication and characterization of transparent conductive Sn‐doped β‐Ga2O3 single crystal

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Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga 2 O 3 , and Diamond

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Fundamentals of Power Semiconductor Devices

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Novel aspects of diamond : from growth to applications

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Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga2O3:Nb heterojunction

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Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au

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A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications

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Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties

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Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

inferredcites →https://doi.org/10.1016/j.ceramint.2018.11.220openalex-snapshot

Direct wafer bonding of Ga2O3–SiC at room temperature

inferredcites →https://doi.org/10.1016/j.fmre.2021.11.002openalex-snapshot

Toward emerging gallium oxide semiconductors: A roadmap

inferredcites →https://doi.org/10.1016/j.fmre.2021.11.003openalex-snapshot

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC

inferredcites →https://doi.org/10.1016/j.jcrysgro.2004.06.027openalex-snapshot

Large-size β-Ga2O3 single crystals and wafers

inferredcites →https://doi.org/10.1016/j.mssp.2017.10.040openalex-snapshot

Recent progress in the growth of β-Ga2O3 for power electronics applications

inferredcites →https://doi.org/10.1016/j.mtphys.2017.10.002openalex-snapshot

P-type β-gallium oxide: A new perspective for power and optoelectronic devices

inferredcites →https://doi.org/10.1016/j.rinp.2018.04.042openalex-snapshot

Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

inferredcites →https://doi.org/10.1016/s0022-0248(00)00851-4openalex-snapshot

Czochralski grown Ga2O3 crystals

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Solar-Blind Photodetector Based on Single Crystal Ga2O3 Film Prepared by a Unique Ion-Cutting Process

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Thermodynamics of Ion-Cutting of β-Ga2O3 and Wafer-Scale Heterogeneous Integration of a β-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate

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Wafer-Scale Fabrication of 42° Rotated Y-Cut LiTaO 3 -on-Insulator (LTOI) Substrate for a SAW Resonator

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Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces

inferredcites →https://doi.org/10.1021/acsami.1c01042openalex-snapshot

Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

inferredcites →https://doi.org/10.1021/acsami.1c09736openalex-snapshot

Ga 2 O 3 -on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

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Influence of High-Energy Proton Irradiation on β-Ga 2 O 3 Nanobelt Field-Effect Transistors

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Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

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Thermodynamic Studies of β-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

inferredcites →https://doi.org/10.1021/ja01123a039openalex-snapshot

Polymorphism of Ga 2 O 3 and the System Ga 2 O 3 —H 2 O

inferredcites →https://doi.org/10.1038/s41524-018-0073-zopenalex-snapshot

Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor

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Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates

inferredcites →https://doi.org/10.1039/c9tc05161aopenalex-snapshot

Dual-field plated β-Ga 2 O 3 nano-FETs with an off-state breakdown voltage exceeding 400 V

inferredcites →https://doi.org/10.1039/d1tc06157gopenalex-snapshot

β-Ga 2 O 3 heterojunction field-effect transistors prepared via UV laser-assisted p-doping of two-dimensional WSe 2

inferredcites →https://doi.org/10.1063/1.2910770openalex-snapshot

Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature

inferredcites →https://doi.org/10.1063/1.3674287openalex-snapshot

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

inferredcites →https://doi.org/10.1063/1.4821858openalex-snapshot

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

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High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

inferredcites →https://doi.org/10.1063/1.4968550openalex-snapshot

Intrinsic electron mobility limits in β -Ga2O3

inferredcites →https://doi.org/10.1063/1.4977857openalex-snapshot

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Deep depletion concept for diamond MOSFET

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inferredcites →https://doi.org/10.1063/1.5006941openalex-snapshot

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inferredcites →https://doi.org/10.1063/1.5017810openalex-snapshot

Radiation hardness of β -Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

inferredcites →https://doi.org/10.1063/1.5017845openalex-snapshot

Guest Editorial: The dawn of gallium oxide microelectronics

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inferredcites →https://doi.org/10.1063/1.5130669openalex-snapshot

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inferredcites →https://doi.org/10.1063/5.0031442openalex-snapshot

SnO/ β -Ga2O3 vertical pn heterojunction diodes

inferredcites →https://doi.org/10.1063/5.0038349openalex-snapshot

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inferredcites →https://doi.org/10.1063/5.0047710openalex-snapshot

In situ heteroepitaxial construction and transport properties of lattice-matched α -Ir2O3/ α -Ga2O3 p-n heterojunction

inferredcites →https://doi.org/10.1063/5.0048311openalex-snapshot

Reduction of MOS interfacial states between β -Ga2O3 and Al2O3 insulator by self-reaction etching with Ga flux

inferredcites →https://doi.org/10.1063/5.0057960openalex-snapshot

Low-temperature direct bonding of SiC and Ga2O3 substrates under atmospheric conditions

inferredcites →https://doi.org/10.1063/5.0075627openalex-snapshot

Nb$_{2}$O$_{5}$ high-k dielectric enabled electric field engineering of $\beta$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) diode

inferredcites →https://doi.org/10.1088/0022-3727/49/21/213001openalex-snapshot

Oxide bipolar electronics: materials, devices and circuits

inferredcites →https://doi.org/10.1088/0268-1242/31/3/034001openalex-snapshot

Recent progress in Ga 2 O 3 power devices

inferredcites →https://doi.org/10.1088/0268-1242/31/3/035023openalex-snapshot

Analysis of the scattering mechanisms controlling electron mobility in β -Ga 2 O 3 crystals

inferredcites →https://doi.org/10.1088/1361-6463/aa7affopenalex-snapshot

State-of-the-art technologies of gallium oxide power devices

inferredcites →https://doi.org/10.1088/1361-6528/aae281openalex-snapshot

Efficient ion-slicing of InP thin film for Si-based hetero-integration

inferredcites →https://doi.org/10.1088/1361-6641/ab4214openalex-snapshot

Lateral source field-plated β -Ga 2 O 3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm 2

inferredcites →https://doi.org/10.1088/1361-6641/abb073openalex-snapshot

Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique

inferredcites →https://doi.org/10.1088/1674-1056/abeee2openalex-snapshot

Device topological thermal management of β-Ga2O3 Schottky barrier diodes*

inferredcites →https://doi.org/10.1088/1674-4926/40/1/012803openalex-snapshot

Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

inferredcites →https://doi.org/10.1088/1674-4926/41/8/082002openalex-snapshot

High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure

inferredcites →https://doi.org/10.1103/physrev.140.a316openalex-snapshot

Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3

inferredcites →https://doi.org/10.1103/physrevapplied.10.011003openalex-snapshot

Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys

inferredcites →https://doi.org/10.1103/physrevb.83.075205openalex-snapshot

Limits to doping in oxides

inferredcites →https://doi.org/10.1109/jeds.2018.2853615openalex-snapshot

Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

inferredcites →https://doi.org/10.1109/jeds.2019.2933369openalex-snapshot

High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

inferredcites →https://doi.org/10.1109/jeds.2021.3130305openalex-snapshot

Field-Plated NiO/Ga 2 O 3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

inferredcites →https://doi.org/10.1109/jeds.2021.3139565openalex-snapshot

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

inferredcites →https://doi.org/10.1109/led.2015.2512279openalex-snapshot

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

inferredcites →https://doi.org/10.1109/led.2016.2568139openalex-snapshot

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs

inferredcites →https://doi.org/10.1109/led.2016.2570521openalex-snapshot

Interface State Density in Atomic Layer Deposited SiO2/ $\beta $ -Ga2O3( $\bar {2}01$ ) MOSCAPs

inferredcites →https://doi.org/10.1109/led.2016.2609202openalex-snapshot

Al2O3/ $\beta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

inferredcites →https://doi.org/10.1109/led.2016.2635579openalex-snapshot

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

inferredcites →https://doi.org/10.1109/led.2017.2696986openalex-snapshot

First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes

inferredcites →https://doi.org/10.1109/led.2017.2697359openalex-snapshot

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

inferredcites →https://doi.org/10.1109/led.2018.2859049openalex-snapshot

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

inferredcites →https://doi.org/10.1109/led.2019.2891304openalex-snapshot

Oxidized Metal Schottky Contacts on (010) $\beta$ -Ga2O3

inferredcites →https://doi.org/10.1109/led.2019.2921116openalex-snapshot

Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors

inferredcites →https://doi.org/10.1109/led.2019.2926202openalex-snapshot

Fast Switching $\beta$ -Ga2O3Power MOSFET With a Trench-Gate Structure

inferredcites →https://doi.org/10.1109/led.2019.2927790openalex-snapshot

Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

inferredcites →https://doi.org/10.1109/led.2019.2930189openalex-snapshot

Lateral 1.8 kV $\beta$ -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit

inferredcites →https://doi.org/10.1109/led.2019.2931697openalex-snapshot

Vertical Ga2O3Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2

inferredcites →https://doi.org/10.1109/led.2019.2953559openalex-snapshot

Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2

inferredcites →https://doi.org/10.1109/led.2020.2967418openalex-snapshot

1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2

inferredcites →https://doi.org/10.1109/led.2020.2968587openalex-snapshot

Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage

inferredcites →https://doi.org/10.1109/led.2020.2991146openalex-snapshot

Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

inferredcites →https://doi.org/10.1109/led.2020.3013918openalex-snapshot

Leakage Current Reduction in β-Ga 2 O 3 Schottky Barrier Diodes by CF 4 Plasma Treatment

inferredcites →https://doi.org/10.1109/led.2021.3055349openalex-snapshot

Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current

inferredcites →https://doi.org/10.1109/led.2021.3056445openalex-snapshot

Demonstration of n-Ga 2 O 3 /p-GaN Diodes by Wet-Etching Lift-Off and Transfer-Print Technique

inferredcites →https://doi.org/10.1109/led.2021.3062851openalex-snapshot

Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

inferredcites →https://doi.org/10.1109/led.2021.3089945openalex-snapshot

High-k Oxide Field-Plated Vertical (001) β-Ga 2 O 3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm 2

inferredcites →https://doi.org/10.1109/led.2021.3100802openalex-snapshot

Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²

inferredcites →https://doi.org/10.1109/led.2021.3132192openalex-snapshot

Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction

inferredcites →https://doi.org/10.1109/led.2021.3133866openalex-snapshot

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

inferredcites →https://doi.org/10.1109/soi.1994openalex-snapshot

Proceedings. IEEE International SOI Conference

inferredcites →https://doi.org/10.1109/ted.2017.2653759openalex-snapshot

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

inferredcites →https://doi.org/10.1109/ted.2019.2911237openalex-snapshot

Ternary Alloy Rare-Earth Scandate as Dielectric for $\beta$ -Ga2O3 MOS Structures

inferredcites →https://doi.org/10.1109/ted.2020.2974794openalex-snapshot

Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs

inferredcites →https://doi.org/10.1109/ted.2020.3001249openalex-snapshot

Band Alignment and Interface Recombination in NiO/ β -Ga 2 O 3 Type-II p-n Heterojunctions

inferredcites →https://doi.org/10.1109/ted.2020.3002327openalex-snapshot

Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing

inferredcites →https://doi.org/10.1109/ted.2020.3003292openalex-snapshot

Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃

inferredcites →https://doi.org/10.1109/ted.2020.3033787openalex-snapshot

Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V

inferredcites →https://doi.org/10.1109/ted.2021.3053189openalex-snapshot

Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors

inferredcites →https://doi.org/10.1109/ted.2021.3056326openalex-snapshot

Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study

inferredcites →https://doi.org/10.1109/ted.2021.3067856openalex-snapshot

ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping

inferredcites →https://doi.org/10.1109/ted.2021.3091548openalex-snapshot

Fabrication and Characterization of High-Voltage NiO/β-Ga2O3 Heterojunction Power Diodes

inferredcites →https://doi.org/10.1109/ted.2021.3130861openalex-snapshot

Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes

inferredcites →https://doi.org/10.1109/tpel.2013.2268900openalex-snapshot

A Survey of Wide Bandgap Power Semiconductor Devices

inferredcites →https://doi.org/10.1109/tpel.2020.3036442openalex-snapshot

Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities

inferredcites →https://doi.org/10.1109/tpel.2021.3069918openalex-snapshot

Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination

inferredcites →https://doi.org/10.1109/tpel.2021.3082640openalex-snapshot

1.37 kV/12 A NiO/β-Ga2O3Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

inferredcites →https://doi.org/10.1109/tpel.2021.3108780openalex-snapshot

1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness

inferredcites →https://doi.org/10.1109/tpel.2021.3123940openalex-snapshot

2.41 kV Vertical P-Nio/n-Ga 2 O 3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm 2

inferredcites →https://doi.org/10.1116/1.4980042openalex-snapshot

Electrical behavior of β -Ga2O3 Schottky diodes with different Schottky metals

inferredcites →https://doi.org/10.1116/1.4995816openalex-snapshot

Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

inferredcites →https://doi.org/10.1116/1.5013155openalex-snapshot

10 MeV proton damage in β-Ga2O3 Schottky rectifiers

inferredcites →https://doi.org/10.1143/jjap.47.8506openalex-snapshot

Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method

inferredcites →https://doi.org/10.1149/2.0031707jssopenalex-snapshot

Perspective—Opportunities and Future Directions for Ga2O3

inferredcites →https://doi.org/10.1149/2.0061702jssopenalex-snapshot

Beta-Gallium Oxide/SiC Heterojunction Diodes with High Rectification Ratios

inferredcites →https://doi.org/10.1149/2.012204jssopenalex-snapshot

Healing of Surface States and Point Defects of Single-Crystal β-Ga2O3Epilayers

inferredcites →https://doi.org/10.1149/2.0151907jssopenalex-snapshot

Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate

inferredcites →https://doi.org/10.1149/2.0211907jssopenalex-snapshot

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers

inferredcites →https://doi.org/10.1149/2.0391907jssopenalex-snapshot

Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers

inferredcites →https://doi.org/10.1149/2.0421907jssopenalex-snapshot

Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

inferredcites →https://doi.org/10.1149/2162-8777/ab682bopenalex-snapshot

Effects of Oxygen Annealing of β -Ga 2 O 3 Epilayers on the Properties of Vertical Schottky Barrier Diodes

inferredcites →https://doi.org/10.1149/2162-8777/ab8b4aopenalex-snapshot

3.4 kV Breakdown Voltage Ga2O3 Trench Schottky Diode with Optimized Trench Corner Radius

inferredcites →https://doi.org/10.1149/2162-8777/aba406openalex-snapshot

Ultra-Wide Bandgap β -Ga 2 O 3 Heterojunction Field-Effect Transistor Using p-Type 4H-SiC Gate for Efficient Thermal Management

inferredcites →https://doi.org/10.1149/2162-8777/ac0500openalex-snapshot

Effects of Downstream Plasma Exposure on β -Ga 2 O 3 Rectifiers

inferredcites →https://doi.org/10.7567/jjap.54.030101openalex-snapshot

Wide-bandgap semiconductor materials: For their full bloom

inferredcites →https://doi.org/10.7567/jjap.55.1202a1openalex-snapshot

Current status of Ga 2 O 3 power devices

inferredcites →https://doi.org/10.7567/jjap.55.1202b7openalex-snapshot

Formation of indium–tin oxide ohmic contacts for β-Ga 2 O 3

inferredcites →https://doi.org/10.7567/jjap.55.1202b9openalex-snapshot

Electron channel mobility in silicon-doped Ga 2 O 3 MOSFETs with a resistive buffer layer

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4649314openalex-extracted

inferred← citeshttps://doi.org/10.1002/jnm.70103openalex-snapshot

Analysis of the Temperature Dependence of the Capacitance of NiO / Ga2O3 Heterojunction Diodes Using Analytical and PSO Modelling

inferred← citeshttps://doi.org/10.1002/pssa.202400310openalex-snapshot

High‐Performance Self‐Powered Deep Ultraviolet Photodetector Based on NiO/β‐Ga2O3 Heterojunction with High Responsivity and Selectivity

inferred← citeshttps://doi.org/10.1007/s00339-025-09267-3openalex-snapshot

Electrical properties of Ag/CdS/ZnO/ITO Schottky photodiode

inferred← citeshttps://doi.org/10.1007/s10854-024-13266-0openalex-snapshot

Analysis of interface states in Zn/p-NiO Schottky barrier diode

inferred← citeshttps://doi.org/10.1007/s10854-025-15163-6openalex-snapshot

Charge carrier trapping and current conduction mechanisms in ZnGa2O4/n-SrTiO3 MOS capacitors

inferred← citeshttps://doi.org/10.1007/s12613-024-2926-4openalex-snapshot

Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices

inferred← citeshttps://doi.org/10.1007/s42341-025-00668-yopenalex-snapshot

Leakage Current Mechanisms in Silicon Carbide MOSFETs - A Review

inferred← citeshttps://doi.org/10.1016/j.apsadv.2025.100744openalex-snapshot

Improved performance of lateral β-Ga2O3 Schottky barrier diodes by nitrogen thermal annealing

inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.160612openalex-snapshot

Unveiling interface engineering dynamics between Ti and Ga2O3 nanowire

inferred← citeshttps://doi.org/10.1016/j.ijthermalsci.2025.110200openalex-snapshot

Transistor-level thermal management in wide and ultra-wide bandgap power semiconductor transistors: A review

inferred← citeshttps://doi.org/10.1016/j.jmat.2024.06.006openalex-snapshot

Significant phonon localization and suppressed transport in silicon-doped gallium oxide: A study using a unified neural network interatomic potential

inferred← citeshttps://doi.org/10.1016/j.matchemphys.2025.131152openalex-snapshot

Unveiling the impact of Ta-doping on single crystals β-Ga2O3 (010) grown by optical floating zone method

inferred← citeshttps://doi.org/10.1016/j.mattod.2025.08.007openalex-snapshot

Overcoming material limitations progresses of gallium oxide for power devices applications: A review

inferred← citeshttps://doi.org/10.1016/j.micrna.2024.207831openalex-snapshot

Improved β-Ga2O3 Schottky Barrier Diodes via thermal oxidation of titanium insertion layer

inferred← citeshttps://doi.org/10.1016/j.micrna.2025.208321openalex-snapshot

Effect of oxygen in the annealing treatment of Al2O3/β-Ga2O3 MOS capacitors

inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107606openalex-snapshot

Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)

inferred← citeshttps://doi.org/10.1016/j.mtadv.2023.100402openalex-snapshot

Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment

inferred← citeshttps://doi.org/10.1016/j.mtadv.2025.100568openalex-snapshot

Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology

inferred← citeshttps://doi.org/10.1016/j.mtphys.2023.101095openalex-snapshot

Ga2O3-based X-ray detector and scintillators: A review

inferred← citeshttps://doi.org/10.1016/j.mtphys.2024.101327openalex-snapshot

Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability

inferred← citeshttps://doi.org/10.1016/j.mtphys.2024.101503openalex-snapshot

Simulation and interpretation of zinc and nitrogen dopants induced defect emissions in monoclinic gallium oxide

inferred← citeshttps://doi.org/10.1016/j.mtphys.2024.101557openalex-snapshot

Heterogeneous wafer bonding of ultra-wide bandgap Ga2O3: A review

inferred← citeshttps://doi.org/10.1016/j.nanoen.2024.110389openalex-snapshot

A strategy for enhancing interfacial thermal transport in Ga2O3-diamond composite structure by introducing an AlN interlayer

inferred← citeshttps://doi.org/10.1016/j.sna.2025.116243openalex-snapshot

Fast-response, self-powered staggered-gap p-CuGaO2/β-Ga2O3 heterojunction for large-area diagnostic X-ray imaging applications

inferred← citeshttps://doi.org/10.1016/j.surfin.2024.103937openalex-snapshot

Low resistance ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga2O3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices

inferred← citeshttps://doi.org/10.1016/j.surfin.2024.105181openalex-snapshot

Interfacial modification of CuO/Ga2O3 by plasmonic Pt for high performance self-powered solar-blind UV photodetector

inferred← citeshttps://doi.org/10.1016/j.surfin.2026.109657openalex-snapshot

Ultrawide bandgap NiCo/β-Ga2O3 Schottky detectors for solar-blind UV response, low-dose X-ray detection, and X-ray imaging

inferred← citeshttps://doi.org/10.1016/j.tsf.2024.140336openalex-snapshot

Microstructure and optical properties of β-Ga2O3 thin films fabricated by pulsed laser deposition

inferred← citeshttps://doi.org/10.1021/acs.cgd.5c01185openalex-snapshot

Effect of Sn Doping on Structural, Optical, and Electrical Properties of β-Ga 2 O 3 Thin Films Prepared via Spin Coating for MSM Photodetector Applications

inferred← citeshttps://doi.org/10.1021/acsaelm.6c00262openalex-snapshot

Interface-Engineered Ultrawide-Bandgap TiN/β-Ga 2 O 3 Schottky Diodes for Radiation-Hard X-ray Detection and Imaging

inferred← citeshttps://doi.org/10.1021/acsami.4c15787openalex-snapshot

Interface Modification by Ga2O3 Atomic Layers within Er-Doped GeO2 Nanofilms for Enhanced Electroluminescence and Operation Stability

inferred← citeshttps://doi.org/10.1021/acsanm.3c01695openalex-snapshot

Ga2O3@Al2O3 Core–Shell Nanowires for High-Performance Solar-Blind Photodetectors

inferred← citeshttps://doi.org/10.1021/acsanm.5c05083openalex-snapshot

GaN/Sn:Ga 2 O 3 Nanowire Network n–n Heterojunction for High-Photocurrent Self-Powered Solar-Blind Photodetection

inferred← citeshttps://doi.org/10.1021/acsaom.3c00204openalex-snapshot

Anisotropies of Structure, Optical Properties, Contact, and Epitaxy on (101)- and (001)-Oriented β-Ga2O3 Crystal Planes

inferred← citeshttps://doi.org/10.1021/acsaom.5c00479openalex-snapshot

Enhanced Sensitivity and Fast Response in α-Ga 2 O 3 X-ray Detectors Using Asymmetric Pt/Ti Electrodes

inferred← citeshttps://doi.org/10.1038/s41598-025-13266-yopenalex-snapshot

Enhancing the photoresponse performance of graphene on silicon-based heterojunction as a broadband photodetector

inferred← citeshttps://doi.org/10.1039/d5ra04311eopenalex-snapshot

Revisiting the Marcus inverted regime: modulation strategies for photogenerated ultrafast carrier transfer from semiconducting quantum dots to metal oxides

inferred← citeshttps://doi.org/10.1039/d5ta03615aopenalex-snapshot

Engineered s-SWCNT network/a-Ga 2 O 3 heterointerface for enhanced deep ultraviolet photodetection

inferred← citeshttps://doi.org/10.1039/d6mh01259kopenalex-snapshot

Work function tuning of MXenes for N-type semiconductors: mechanisms and van der Waals contact engineering

inferred← citeshttps://doi.org/10.1063/5.0180041openalex-snapshot

Growth, catalysis, and faceting of α-Ga2O3 and α-(In x Ga1− x )2O3 on m -plane α-Al2O3 by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1063/5.0185566openalex-snapshot

Reliable operation of Cr2O3:Mg/β-Ga2O3 p–n heterojunction diodes at 600 °C

inferred← citeshttps://doi.org/10.1063/5.0225128openalex-snapshot

Application and prospect of in situ TEM in wide bandgap semiconductor materials and devices

inferred← citeshttps://doi.org/10.1063/5.0228825openalex-snapshot

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga2O3 Schottky diodes

inferred← citeshttps://doi.org/10.1063/5.0250729openalex-snapshot

High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study

inferred← citeshttps://doi.org/10.1063/5.0253608openalex-snapshot

Investigation of the machinability of (001) single-crystal β-Ga2O3 via tribological methodology

inferred← citeshttps://doi.org/10.1063/5.0254944openalex-snapshot

Demonstration of enhancement-mode high-k gated field-effect transistors with a novel ultrawide bandgap semiconductor: Germanium oxide

inferred← citeshttps://doi.org/10.1063/5.0285075openalex-snapshot

Status of Ga2O3 for power device and UV photodetector applications

inferred← citeshttps://doi.org/10.1063/5.0285513openalex-snapshot

Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes

inferred← citeshttps://doi.org/10.1063/5.0308375openalex-snapshot

Universal Ohmic contacts to β -Ga2O3 using interfacial dipoles of ultra-thin MgF2 layer and related defect passivation

inferred← citeshttps://doi.org/10.1063/5.0310852openalex-snapshot

Ga2O3/IGZO heterojunction-based synaptic transistor for neuromorphic visual perception

inferred← citeshttps://doi.org/10.1088/2631-8695/acf43dopenalex-snapshot

Gate-mesa trench enables enhanced β-Ga2O3 MOSFET with higher power figure of merit

inferred← citeshttps://doi.org/10.1088/2631-8695/ad6ff2openalex-snapshot

Gate mesa terminal with drain-field-plated β-Ga2O3 MOSFET with ultra-high power figure of merit

inferred← citeshttps://doi.org/10.1109/ieecsc64206.2025.11099800openalex-snapshot

Thermal Analysis of Gallium Oxide Devices Under Various Package Structures

inferred← citeshttps://doi.org/10.1109/laedc58183.2023.10209134openalex-snapshot

Implementation of Step-Hetero-Oxide & Dual Material Gate Designs on Lateral β-Ga2O3 MOSFET for Terahertz Applications

inferred← citeshttps://doi.org/10.1109/ted.2024.3360016openalex-snapshot

Vertical β -Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination

inferred← citeshttps://doi.org/10.1109/ted.2025.3527952openalex-snapshot

Heteroepitaxial Growth of Sn δ-Doped β-Ga₂O₃ MOSFETs on c-Plane Sapphire via Nonvacuum Mist-CVD Process

inferred← citeshttps://doi.org/10.1149/2162-8777/ac9edbopenalex-snapshot

Electrical and Structural Properties of Two-Inch Diameter (0001) α -Ga 2 O 3 Films Doped with Sn and Grown by Halide Epitaxy

inferred← citeshttps://doi.org/10.1149/2162-8777/ad28c9openalex-snapshot

Simulation Research on High-Voltage β-Ga2O3 MOSFET Based on Floating Field Plate

inferred← citeshttps://doi.org/10.1149/2162-8777/adc3c9openalex-snapshot

Spectroscopic Calculation of Band Alignment Between High Permittivity Composites ZrSiO, AlSiO and β-Ga2O3

inferred← citeshttps://doi.org/10.1149/2162-8777/adfb52openalex-snapshot

Structural Properties and Raman Spectra of Micron-Thick β-Ga2O3 Films Deposited on SiC/Porous Si/Si Substrates

inferred← citeshttps://doi.org/10.21203/rs.3.rs-3492922/v1openalex-snapshot

Gate Mesa Terminal With Drain-Field-Plated β-Ga2O3 MOSFET With Power Figure of Merit of 1.914 GW/cm2

inferred← citeshttps://doi.org/10.2139/ssrn.4965983openalex-snapshot

Evolution of Charge Carrier Trapping and Impelling Current Conduction Mechanism with Temperature in Znga2o4/N-Srtio3 Mos Capacitor

inferred← citeshttps://doi.org/10.2139/ssrn.5002264openalex-snapshot

Evolution of Charge Carrier Trapping and Impelling Current Conduction Mechanism with Temperature in Znga2o4/N-Srtio3 Mos Capacitor

inferred← citeshttps://doi.org/10.2139/ssrn.5246484openalex-snapshot

Evolution of Charge Carrier Trapping and Impelling Current Conduction Mechanism with Temperature in Znga2o4/N-Srtio3 Mos Capacitor

inferred← citeshttps://doi.org/10.3390/cryst13081227openalex-snapshot

Hydrogen-like Impurity States in β-Ga2O3/(AlxGa1−x)2O3 Core/Shell Nanostructures: Comparison between Nanorods and Nanotubes

inferred← citeshttps://doi.org/10.3390/electronics15112337openalex-snapshot

High Breakdown Voltage (>3 kV) in β-Ga2O3 Lateral MOSFETs Enabled by a Si3N4 Terminal Structure

inferred← citeshttps://doi.org/10.3390/ma17081870openalex-snapshot

A Review of β-Ga2O3 Power Diodes

inferred← citeshttps://doi.org/10.3390/mi17050590openalex-snapshot

Electro-Thermal Improvement in a β-Ga2O3 Cage-Integrated Slanted-Fin MOSFET

inferred← citeshttps://doi.org/10.3390/nano15241867openalex-snapshot

Low-Temperature Synthesis of Highly Preferentially Oriented ε-Ga2O3 Films for Solar-Blind Detector Application

inferred← citeshttps://doi.org/10.35848/1347-4065/acc667openalex-snapshot

Examination of proper impurity doping and annealing conditions for solution processed Ga2O3 thin films

inferred← citeshttps://doi.org/10.35848/1882-0786/ad6b73openalex-snapshot

Prospects for β-Ga 2 O 3 : now and into the future

inferred← citeshttps://doi.org/10.59188/eduvest.v4i12.44711openalex-snapshot

Next-Generation CPU Architectures: A Study of the Influence of Nanometer Technology on Computer Performance

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