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Effect of gamma irradiation on resistive switching of Al/TiO2/n+Si ReRAM

https://doi.org/10.1016/j.nimb.2017.04.091
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.mee.2009.03.132openalex-snapshot
Resistive non-volatile memory devices (Invited Paper)
inferredcites →https://doi.org/10.1016/j.mee.2011.03.054openalex-snapshot
Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility
inferredcites →https://doi.org/10.1016/j.nima.2005.09.017openalex-snapshot
Effects of 60Co γ-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures
inferredcites →https://doi.org/10.1016/j.nima.2012.05.062openalex-snapshot
Effect of γ-ray irradiation on breakdown voltage, ideality factor, dark current and series resistance of GaAs p–i–n diode
inferredcites →https://doi.org/10.1016/j.nimb.2013.11.006openalex-snapshot
Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitors
inferredcites →https://doi.org/10.1021/ja01612a110openalex-snapshot
X-Ray Diffraction Procedures for Polycrystalline and Amorphous Materials.
inferredcites →https://doi.org/10.1038/nmat2023openalex-snapshot
Nanoionics-based resistive switching memories
inferredcites →https://doi.org/10.1038/nnano.2012.240openalex-snapshot
Memristive devices for computing
inferredcites →https://doi.org/10.1063/1.126902openalex-snapshot
Reproducible switching effect in thin oxide films for memory applications
inferredcites →https://doi.org/10.1063/1.3524192openalex-snapshot
High temperature ultrasonic transducer up to 1000 °C using lithium niobate single crystal
inferredcites →https://doi.org/10.1063/1.3525801openalex-snapshot
Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior
inferredcites →https://doi.org/10.1063/1.4745048openalex-snapshot
Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
inferredcites →https://doi.org/10.1063/1.4940361openalex-snapshot
An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin
inferredcites →https://doi.org/10.1073/pnas.251534898openalex-snapshot
Energetics of nanocrystalline TiO 2
inferredcites →https://doi.org/10.1088/0031-9112/21/12/031openalex-snapshot
Current Injection in Solids
inferredcites →https://doi.org/10.1109/23.45393openalex-snapshot
An improved standard total dose test for CMOS space electronics
inferredcites →https://doi.org/10.1109/3dic.2009.5306582openalex-snapshot
Architectural evaluation of 3D stacked RRAM caches
inferredcites →https://doi.org/10.1109/aero.2013.6497378openalex-snapshot
Radiation effects studies on thin film TiO2 memristor devices
inferredcites →https://doi.org/10.1109/iedm.2014.7046995openalex-snapshot
Resistive Memories for Ultra-Low-Power embedded computing design
inferredcites →https://doi.org/10.1109/iscas.2015.7169340openalex-snapshot
Emerging resistive memories for low power embedded applications and neuromorphic systems
inferredcites →https://doi.org/10.1109/jproc.2012.2190369openalex-snapshot
Metal–Oxide RRAM
inferredcites →https://doi.org/10.1109/ted.2011.2148121openalex-snapshot
Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory
inferredcites →https://doi.org/10.1109/tns.2010.2045768openalex-snapshot
Radiation Hardness of ${\rm TiO}_{2}$ Memristive Junctions
inferredcites →https://doi.org/10.1109/tns.2012.2208480openalex-snapshot
Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation
inferredcites →https://doi.org/10.1109/tns.2013.2249529openalex-snapshot
Displacement Damage in TiO $_{2}$ Memristor Devices
inferredcites →https://doi.org/10.1109/tns.2013.2285516openalex-snapshot
A Comparison of the Radiation Response of ${\rm TaO}_{\rm x}$ and ${\rm TiO}_2$ Memristors
inferredcites →https://doi.org/10.1116/1.3021030openalex-snapshot
Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes
inferredcites →https://doi.org/10.1116/1.3609974openalex-snapshot
Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
inferredcites →https://doi.org/10.1118/1.4729840openalex-snapshot
Measurement and Detection of Radiation.
inferredcites →https://doi.org/10.1155/2013/170269openalex-snapshot
Radiation Damage in Electronic Memory Devices
inferredcites →https://doi.org/10.1166/jctn.2011.1708openalex-snapshot
Memory Circuit Elements: From Systems to Applications
inferredcites →https://doi.org/10.1186/1556-276x-9-1openalex-snapshot
Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors
inferredcites →https://doi.org/10.1186/1556-276x-9-452openalex-snapshot
Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device
inferredcites →https://doi.org/10.1201/b18203openalex-snapshot
Measurement and Detection of Radiation
inferredcites →https://doi.org/10.1557/jmr.2012.231openalex-snapshot
Titanium dioxide thin films for next-generation memory devices
inferredcites →https://doi.org/10.29292/jics.v10i1.403openalex-snapshot
Effect of substrate type on structure of TiO2 thin film deposited by atomic layer deposition technique
inferredcites →https://doi.org/10.4028/www.scientific.net/ssp.124-126.207openalex-snapshot
Effect of ZnO Buffer Layer on the Structure of TiO2 Thin Film Deposited by Magnetron Sputtering

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4681052openalex-extracted
inferred← citeshttps://doi.org/10.1002/aelm.202400823openalex-snapshot
CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications
inferred← citeshttps://doi.org/10.1007/s11664-018-6257-yopenalex-snapshot
Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications
inferred← citeshttps://doi.org/10.1016/b978-0-12-814629-3.00011-8openalex-snapshot
The effect of external stimuli on the performance of memristive oxides
inferred← citeshttps://doi.org/10.1016/j.apmt.2026.103146openalex-snapshot
Al-engineered anatase/rutile TiO2 heterostructures for superior resistive switching
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.173309openalex-snapshot
Sn–3Ag–0.5Cu/TiO2/Ti wire-tube structure with memristive response by ultrasonic soldering
inferred← citeshttps://doi.org/10.1016/j.matchemphys.2023.127301openalex-snapshot
Dielectric and bipolar resistive switching properties of Ag doped As–S–Se chalcogenide for non-volatile memory applications
inferred← citeshttps://doi.org/10.1016/j.microrel.2018.07.017openalex-snapshot
Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory
inferred← citeshttps://doi.org/10.1016/j.mssp.2020.105110openalex-snapshot
Tuning the analog and digital resistive switching properties of TiO2 by nanocompositing Al-doped ZnO
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108298openalex-snapshot
Unlocking the potential of effect of gamma irradiation on α-Fe2O3 nanoparticles for high-performance resistive switching applications
inferred← citeshttps://doi.org/10.1016/j.mtphys.2026.102174openalex-snapshot
Interfacial rare-earth oxide-enabled X-ray-tolerant Ga2O3 MIS Schottky barrier diodes with significant reverse leakage current suppression
inferred← citeshttps://doi.org/10.1016/j.radphyschem.2018.07.005openalex-snapshot
Studying ReRAM devices at Low Earth Orbits using the LabOSat platform
inferred← citeshttps://doi.org/10.1016/j.radphyschem.2020.108684openalex-snapshot
Co-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3)
inferred← citeshttps://doi.org/10.1016/j.radphyschem.2021.109750openalex-snapshot
Effect of gamma ray irradiation on structural and surface properties of c-axis oriented ZnO thin films
inferred← citeshttps://doi.org/10.1016/j.radphyschem.2024.111752openalex-snapshot
Gamma irradiated Cu-doped TiO2 nanoparticles for selective ammonia sensing
inferred← citeshttps://doi.org/10.1038/s41928-021-00562-4openalex-snapshot
Low-power electronic technologies for harsh radiation environments
inferred← citeshttps://doi.org/10.1063/5.0147593openalex-snapshot
Performance degradation and I–V model of TiO2-film-based resistive switching memory under proton irradiation
inferred← citeshttps://doi.org/10.1080/10420150.2018.1425863openalex-snapshot
Hafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance
inferred← citeshttps://doi.org/10.1080/10420150.2023.2186872openalex-snapshot
Radiation tolerance and defect dynamics of ALD-grown HfTiO x -based MOS capacitors
inferred← citeshttps://doi.org/10.1080/10420150.2025.2474973openalex-snapshot
Effects of heavy ion irradiation on the electrical properties of HfTiO x -based MOS devices
inferred← citeshttps://doi.org/10.1088/1361-6528/ace830openalex-snapshot
Solvothermal synthesis of TiO 2 nanospheres for non-volatile memory and synaptic learning applications
inferred← citeshttps://doi.org/10.1109/jflex.2023.3289481openalex-snapshot
Radiation-Hardened ReRAM Devices for Flexible Electronics
inferred← citeshttps://doi.org/10.1109/jsen.2021.3061955openalex-snapshot
A Solution Processed Amorphous InGaZnO Thin-Film Transistor-Based Dosimeter for Gamma-Ray Detection and Its Reliability
inferred← citeshttps://doi.org/10.1109/ted.2018.2792305openalex-snapshot
Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond
inferred← citeshttps://doi.org/10.1109/ted.2022.3206723openalex-snapshot
TID Effect and Damage Model of 60CO γ for the TiO2 Nano-Rod-Based Resistive Switching Memory
inferred← citeshttps://doi.org/10.1109/ted.2024.3482251openalex-snapshot
Gamma Irradiation in HfOₓ-Based Resistive Switching Memory With Mitigated Performance Degradation Using Ruthenium Electrode
inferred← citeshttps://doi.org/10.1109/tns.2019.2950199openalex-snapshot
Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices
inferred← citeshttps://doi.org/10.52676/1729-7885-2019-1-11-15openalex-snapshot
INFLUENCE OF IRRADIATION WITH Fe7+ IONS ON THE STRUCTURAL CHARACTERISTICS OF TiO2 FILMS
inferred← citeshttps://doi.org/10.54014/neb1-57evopenalex-snapshot
Radiation effects in tantalum oxide-based resistive memory devices
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