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“Zero-charge” SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition

https://doi.org/10.1016/j.solmat.2015.07.040

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/chin.197343017openalex-snapshot

ChemInform Abstract: CHARGE IN SIO2‐AL2O3 DOUBLE LAYERS ON SILICON

inferredcites →https://doi.org/10.1002/j.1538-7305.1975.tb02861.xopenalex-snapshot

Aluminum Oxide/Silicon Dioxide, Double-Insulator, MOS Structure

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Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells

inferredcites →https://doi.org/10.1002/pip.823openalex-snapshot

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

inferredcites →https://doi.org/10.1002/pssr.201105445openalex-snapshot

Surface passivation of phosphorus‐diffused n + ‐type emitters by plasma‐assisted atomic‐layer deposited Al 2 O 3

inferredcites →https://doi.org/10.1002/pssr.201308081openalex-snapshot

Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy

inferredcites →https://doi.org/10.1002/pssr.201409138openalex-snapshot

Heavily doped Si:P emitters of crystalline Si solar cells: recombination due to phosphorus precipitation

inferredcites →https://doi.org/10.1016/0038-1101(92)90325-7openalex-snapshot

A unified mobility model for device simulation—I. Model equations and concentration dependence

inferredcites →https://doi.org/10.1016/0379-6787(84)90114-5openalex-snapshot

The effects of phosphorus precipitation on the open-circuit voltage in N+/P silicon solar cells

inferredcites →https://doi.org/10.1016/0927-0248(93)90075-eopenalex-snapshot

Field effect passivation of high efficiency silicon solar cells

inferredcites →https://doi.org/10.1016/j.egypro.2011.06.195openalex-snapshot

Variation of the layer thickness to study the electrical property of PECVD Al2O3 / c-Si interface

inferredcites →https://doi.org/10.1016/j.egypro.2012.07.034openalex-snapshot

Improved Parameterization of Auger Recombination in Silicon

inferredcites →https://doi.org/10.1016/j.solmat.2006.04.014openalex-snapshot

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

inferredcites →https://doi.org/10.1016/j.solmat.2014.06.005openalex-snapshot

Symmetrical Al2O3-based passivation layers for p- and n-type silicon

inferredcites →https://doi.org/10.1063/1.1448169openalex-snapshot

Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2

inferredcites →https://doi.org/10.1063/1.2240736openalex-snapshot

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

inferredcites →https://doi.org/10.1063/1.2784168openalex-snapshot

Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

inferredcites →https://doi.org/10.1063/1.2870202openalex-snapshot

Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells

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High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

inferredcites →https://doi.org/10.1063/1.3497014openalex-snapshot

Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

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Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interface

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Investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two-dimensional charge collection probability and the reciprocity theorem

inferredcites →https://doi.org/10.1063/1.3595940openalex-snapshot

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

inferredcites →https://doi.org/10.1063/1.3658246openalex-snapshot

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

inferredcites →https://doi.org/10.1063/1.368545openalex-snapshot

Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation

inferredcites →https://doi.org/10.1063/1.4857075openalex-snapshot

Influence of the SiO2 interlayer thickness on the density and polarity of charges in Si/SiO2/Al2O3 stacks as studied by optical second-harmonic generation

inferredcites →https://doi.org/10.1063/1.4867643openalex-snapshot

Effect of boron concentration on recombination at the p-Si–Al2O3 interface

inferredcites →https://doi.org/10.1063/1.4886595openalex-snapshot

On effective surface recombination parameters

inferredcites →https://doi.org/10.1063/1.4891021openalex-snapshot

Near surface inversion layer recombination in Al2O3 passivated n-type silicon

inferredcites →https://doi.org/10.1063/1.4901242openalex-snapshot

Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

inferredcites →https://doi.org/10.1063/1.4903483openalex-snapshot

Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation

inferredcites →https://doi.org/10.1063/1.4903988openalex-snapshot

Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

inferredcites →https://doi.org/10.1063/1.89694openalex-snapshot

Auger coefficients for highly doped and highly excited silicon

inferredcites →https://doi.org/10.1088/0268-1242/27/7/074002openalex-snapshot

Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing

inferredcites →https://doi.org/10.1109/jphotov.2011.2173299openalex-snapshot

Silicon Surface Passivation by Thin Thermal Oxide/PECVD Layer Stack Systems

inferredcites →https://doi.org/10.1109/jphotov.2012.2226145openalex-snapshot

Boron Emitter Passivation With Al$_{\bf 2}$O $_{\bf 3}$ and Al$_{\bf 2}$O$_{\bf 3}$/SiN$_{\bm x}$ Stacks Using ALD Al$_{\bf 2}$O $_{\bf 3}$

inferredcites →https://doi.org/10.1109/jphotov.2013.2248415openalex-snapshot

Passivation of n$^{+}$-Type Si Surfaces by Low Temperature Processed SiO$_{2}$/Al$_{2}$O$_{3}$ Stacks

inferredcites →https://doi.org/10.1109/jphotov.2013.2270350openalex-snapshot

Progress in Surface Passivation of Heavily Doped n-Type and p-Type Silicon by Plasma-Deposited AlO $_{\bm x}$/SiN$_{\bm x}$ Dielectric Stacks

inferredcites →https://doi.org/10.1109/jphotov.2014.2344757openalex-snapshot

Effective SiN$_{\bf x}$ :H Capping Layers on 1-nm Al2O3 for p$^{\bf +}$ Surface Passivation

inferredcites →https://doi.org/10.1109/jphotov.2015.2419132openalex-snapshot

Dielectric Charge Tailoring in PECVD SiO ${}_x$ /SiN ${}_x$ Stacks and Application at the Rear of Al Local Back Surface Field Si Wafer Solar Cells

inferredcites →https://doi.org/10.1109/pvsc.2010.5616124openalex-snapshot

A freeware 1D emitter model for silicon solar cells

inferredcites →https://doi.org/10.1116/1.4728205openalex-snapshot

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

inferredcites →https://doi.org/10.1149/1.2403638openalex-snapshot

Charge in SiO[sub 2]-Al[sub 2]O[sub 3] Double Layers on Silicon

inferredcites →https://doi.org/10.1149/1.3276040openalex-snapshot

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

inferredcites →https://doi.org/10.1149/1.3501970openalex-snapshot

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

inferredcites →https://doi.org/10.1149/1.3633680openalex-snapshot

Aluminum oxide and other ALD materials for Si surface passivation

inferredcites →https://doi.org/10.1149/2.067203jesopenalex-snapshot

Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties

inferredcites →https://doi.org/10.4229/24theupvsec2009-1cv.4.37openalex-snapshot

Surface Passivation Using Dielectric Films: How Much Charge is Enough?

inferredcites →https://doi.org/10.4229/27theupvsec2012-2av.6.21openalex-snapshot

Excellent Passivation of n+ and p+ Silicon by PECVD SiOx/AlOx Stacks

inferredcites →https://doi.org/10.4229/28theupvsec2013-2bv.1.46openalex-snapshot

Dielectric Passivation Schemes for High Efficiency n-Type c-Si Solar Cells

inferredcites →https://doi.org/10.4229/28theupvsec2013-2co.4.6openalex-snapshot

Progress with Industrially-Feasible Excellent Surface Passivation of Heavily-Doped p-Type and n-Type Crystalline Silicon by PECVD SiOx/SiNx with Optimised Antireflective Performance

inferredcites →https://doi.org/10.4229/eupvsec20142014-2av.2.12openalex-snapshot

Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells

inferredcites →https://doi.org/10.6100/ir781512openalex-snapshot

Surface passivation by Al2O3-based film stacks for Si solar cells

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Optimization of Passivation Layer on the Front Surface of N-Type Topcon Solar Cells

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Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks

inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.172691openalex-snapshot

Improving the minority carrier lifetime of PERC solar cells via bi-layer rear interface passivation strategy

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Surface related degradation phenomena in P-type multi-crystalline silicon at elevated temperature and illumination

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Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

inferred← citeshttps://doi.org/10.1016/j.solmat.2019.01.038openalex-snapshot

Application of SiO2 passivation technique in mass production of silicon solar cells

inferred← citeshttps://doi.org/10.1016/j.solmat.2023.112481openalex-snapshot

Atomic-layer-deposited BOx/Al2O3 stack for crystalline silicon surface passivation

inferred← citeshttps://doi.org/10.1016/j.tsf.2024.140497openalex-snapshot

Optimization of passivation layer on the front surface of N-type tunnel oxide passivated contact solar cells

inferred← citeshttps://doi.org/10.1063/1.4989824openalex-snapshot

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

inferred← citeshttps://doi.org/10.1063/1.5085853openalex-snapshot

SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

inferred← citeshttps://doi.org/10.1088/1742-6596/1907/1/012026openalex-snapshot

A review of technologies for high efficiency silicon solar cells

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Analysis of Field-Effect Passivation in Textured and Undiffused Silicon Surfaces

inferred← citeshttps://doi.org/10.1109/jphotov.2017.2714134openalex-snapshot

Quantification of pn-Junction Recombination in Interdigitated Back-Contact Crystalline Silicon Solar Cells

inferred← citeshttps://doi.org/10.1109/pvsc.2016.7750356openalex-snapshot

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