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Quantum Chemistry Study on Gas Reaction Mechanism in AlN MOVPE Growth

https://doi.org/10.1021/acs.jpca.9b11817

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/jcc.23470openalex-snapshot

KiSThelP: A program to predict thermodynamic properties and rate constants from quantum chemistry results†

inferredcites →https://doi.org/10.1016/j.cplett.2006.09.102openalex-snapshot

AlGaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: First-principles calculations

inferredcites →https://doi.org/10.1016/j.cplett.2013.07.077openalex-snapshot

Reactivity of adducts relevant to the deposition of hexagonal BN from first-principles calculations

inferredcites →https://doi.org/10.1016/j.jcrysgro.2003.11.074openalex-snapshot

Nature of the parasitic chemistry during AlGaInN OMVPE

inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.11.083openalex-snapshot

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.10.060openalex-snapshot

Fundamental chemistry and modeling of group-III nitride MOVPE

inferredcites →https://doi.org/10.1016/j.jcrysgro.2007.01.022openalex-snapshot

Influence of polymer formation on metalorganic vapor-phase epitaxial growth of AlN

inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.11.015openalex-snapshot

AlInN MOVPE: growth chemistry and analysis of trends

inferredcites →https://doi.org/10.1016/j.jcrysgro.2019.03.023openalex-snapshot

Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN

inferredcites →https://doi.org/10.1016/j.jcrysgro.2019.125201openalex-snapshot

Quantum chemical study on nanoparticles formation mechanism in AlGaN MOCVD growth

inferredcites →https://doi.org/10.1016/s0022-328x(00)00403-4openalex-snapshot

Quantum chemical study of parasitic reaction in III–V nitride semiconductor crystal growth

inferredcites →https://doi.org/10.1016/s0960-8974(98)00002-3openalex-snapshot

Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxy

inferredcites →https://doi.org/10.1021/ic00301a019openalex-snapshot

Organometallic precursors to aluminum nitride: synthesis and crystal structures of amidodimethylaluminum trimer and the planar species amidodi-tert-butylaluminum trimer

inferredcites →https://doi.org/10.1021/ja953105oopenalex-snapshot

Aminodimethylalane (Me2AlNH2): Matrix Isolation and ab Initio Calculations

inferredcites →https://doi.org/10.1021/ja9830389openalex-snapshot

Structure of Ammonia Trimethylalane (Me3Al-NH3): Microwave Spectroscopy, X-ray Powder Diffraction, and ab Initio Calculations

inferredcites →https://doi.org/10.1021/jp054133oopenalex-snapshot

Complex Formation of Trimethylaluminum and Trimethylgallium with Ammonia: Evidence for a Hydrogen-Bonded Adduct

inferredcites →https://doi.org/10.1021/jp507713bopenalex-snapshot

Initial Gas Phase Reactions between Al(CH3)3/AlH3 and Ammonia: Theoretical Study

inferredcites →https://doi.org/10.1021/jp801609zopenalex-snapshot

From Charge Transfer Complexes to Nanorods

inferredcites →https://doi.org/10.1088/0022-3727/31/20/001openalex-snapshot

Growth and applications of Group III-nitrides

inferredcites →https://doi.org/10.1149/2.0191612jssopenalex-snapshot

Quantum Chemistry Study on the Adduct Reaction Paths as Functions of Temperature in GaN/AlN MOVPE Growth

inferredcites →https://doi.org/10.1149/2.0231602jssopenalex-snapshot

Chemical Reaction Pathways for MOVPE Growth of Aluminum Nitride

inferredcites →https://doi.org/10.7567/jjap.56.04cj04openalex-snapshot

Thermodynamic considerations of the vapor phase reactions in III–nitride metal organic vapor phase epitaxy

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4705296openalex-extracted

Quantitative computational study of gas - phase reaction mechanism between DEZn and t -BuOH in ZnO growth by MOCVD

inferred← citeshttps://doi.org/10.1002/pssa.202400064openalex-snapshot

Estimation of Junction Temperature in Single 228 nm‐Band AlGaN Far‐Ultraviolet‐C Light‐Emitting Diode on c‐Sapphire Having 1.8 mW Power and 0.32% External Quantum Efficiency

inferred← citeshttps://doi.org/10.1016/j.apsusc.2020.148773openalex-snapshot

Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2020.125942openalex-snapshot

Influence of inlet structures of planetary reactor on gas reaction path in AlN-MOVPE process

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2023.127197openalex-snapshot

Gas-Phase reaction mechanism of InN MOVPE: A systematic DFT study

inferred← citeshttps://doi.org/10.1016/j.micrna.2023.207671openalex-snapshot

Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C)

inferred← citeshttps://doi.org/10.1021/acs.cgd.5c01352openalex-snapshot

Low-Defect GaN Epitaxy under In Situ AlN Buffer Using Novel MOCVD

inferred← citeshttps://doi.org/10.1021/acs.jpca.5c02601openalex-snapshot

Photoelectron Spectra of Small Gallium and Aluminum Radicals

inferred← citeshttps://doi.org/10.1038/s41598-022-10937-yopenalex-snapshot

Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal–organic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1038/s41598-023-29150-6openalex-snapshot

High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1063/5.0255056openalex-snapshot

Semipolar (11-22) AlN templates prepared by pulsed hydride vapor phase epitaxy

inferred← citeshttps://doi.org/10.1177/02670844261423649openalex-snapshot

Quantitative study of gas-phase reactions in ZnO thin-film coating process

inferred← citeshttps://doi.org/10.35848/1347-4065/ade415openalex-snapshot

GaN localization in AlGaN grown by ultra-high-temperature metalorganic vapor phase epitaxy

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