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Effect of Distance on Photoluminescence Quenching and Proximity-Induced Spin–Orbit Coupling in Graphene/WSe2 Heterostructures

https://doi.org/10.1021/acs.nanolett.8b00691

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

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Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures

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Electrical gate control of spin current in van der Waals heterostructures at room temperature

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Strong interface-induced spin–orbit interaction in graphene on WS2

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Valley polarization in MoS2 monolayers by optical pumping

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Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

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Gate-tunable topological valley transport in bilayer graphene

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Charged-impurity scattering in graphene

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Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures

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Weak Localization in Graphene Flakes

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z→−z Symmetry of Spin-Orbit Coupling and Weak Localization in Graphene

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Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides

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Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport

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Origin and Magnitude of ‘Designer’ Spin-Orbit Interaction in Graphene on Semiconducting Transition Metal Dichalcogenides

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One-Dimensional Electrical Contact to a Two-Dimensional Material

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The valley Hall effect in MoS 2 transistors

What points at this work

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