On the public citation graph

Gate-Tuned Insulator–Metal Transition in Electrolyte-Gated Transistors Based on Tellurene

https://doi.org/10.1021/acs.nanolett.9b01827

0 signed · 120 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.

Claim with ORCID

Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.

See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.200801633openalex-snapshot

High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids

inferredcites →https://doi.org/10.1002/adfm.201804378openalex-snapshot

Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors

inferredcites →https://doi.org/10.1002/adfm.201806346openalex-snapshot

2D Tellurium Based High‐Performance All‐Optical Nonlinear Photonic Devices

inferredcites →https://doi.org/10.1002/adma.201003241openalex-snapshot

Electric‐Field Control of the Metal‐Insulator Transition in Ultrathin NdNiO3 Films

inferredcites →https://doi.org/10.1002/adma.201607054openalex-snapshot

Endeavor of Iontronics: From Fundamentals to Applications of Ion‐Controlled Electronics

inferredcites →https://doi.org/10.1002/adma.201803109openalex-snapshot

High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth

inferredcites →https://doi.org/10.1002/aelm.201600369openalex-snapshot

2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors

inferredcites →https://doi.org/10.1007/978-3-662-02403-4openalex-snapshot

Electronic Properties of Doped Semiconductors

inferredcites →https://doi.org/10.1016/0370-1573(84)90103-0openalex-snapshot

Weak localization in thin films

inferredcites →https://doi.org/10.1017/cbo9780511978999.002openalex-snapshot

Disordered electronic systems

inferredcites →https://doi.org/10.1021/acs.jpclett.8b01751openalex-snapshot

Anomalous Cooling-Rate-Dependent Charge Transport in Electrolyte-Gated Rubrene Crystals

inferredcites →https://doi.org/10.1021/acs.nanolett.7b01717openalex-snapshot

One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport

inferredcites →https://doi.org/10.1021/acs.nanolett.8b02368openalex-snapshot

Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene

inferredcites →https://doi.org/10.1021/acs.nanolett.8b02647openalex-snapshot

Diameter-Dependent Superconductivity in Individual WS 2 Nanotubes

inferredcites →https://doi.org/10.1021/acsami.8b11836openalex-snapshot

High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study

inferredcites →https://doi.org/10.1021/acsnano.5b00497openalex-snapshot

Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating

inferredcites →https://doi.org/10.1021/acsnano.6b03403openalex-snapshot

Electrostatic versus Electrochemical Doping and Control of Ferromagnetism in Ion-Gel-Gated Ultrathin La0.5Sr0.5CoO3−δ

inferredcites →https://doi.org/10.1021/acsnano.8b03424openalex-snapshot

Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors

inferredcites →https://doi.org/10.1021/jp204152yopenalex-snapshot

Organic Electrical Double Layer Transistors Based on Rubrene Single Crystals: Examining Transport at High Surface Charge Densities above 1013 cm–2

inferredcites →https://doi.org/10.1021/jp2093934openalex-snapshot

Dependence of Conductivity on Charge Density and Electrochemical Potential in Polymer Semiconductors Gated with Ionic Liquids

inferredcites →https://doi.org/10.1021/nl300741hopenalex-snapshot

Modulation of the Electrical Properties of VO2 Nanobeams Using an Ionic Liquid as a Gating Medium

inferredcites →https://doi.org/10.1021/nl504314copenalex-snapshot

Electrostatically Induced Superconductivity at the Surface of WS2

inferredcites →https://doi.org/10.1038/nature09998openalex-snapshot

Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance

inferredcites →https://doi.org/10.1038/ncomms12391openalex-snapshot

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

inferredcites →https://doi.org/10.1038/ncomms14465openalex-snapshot

Superconductivity in a chiral nanotube

inferredcites →https://doi.org/10.1038/ncomms2213openalex-snapshot

Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors

inferredcites →https://doi.org/10.1038/nmat2298openalex-snapshot

Electric-field-induced superconductivity in an insulator

inferredcites →https://doi.org/10.1038/nmat2587openalex-snapshot

Liquid-gated interface superconductivity on an atomically flat film

inferredcites →https://doi.org/10.1038/nnano.2012.193openalex-snapshot

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

inferredcites →https://doi.org/10.1038/nnano.2014.323openalex-snapshot

Gate-tunable phase transitions in thin flakes of 1T-TaS2

inferredcites →https://doi.org/10.1038/nnano.2014.35openalex-snapshot

Black phosphorus field-effect transistors

inferredcites →https://doi.org/10.1038/nnano.2015.314openalex-snapshot

Gate-induced superconductivity in atomically thin MoS2 crystals

inferredcites →https://doi.org/10.1038/s41563-018-0246-7openalex-snapshot

Electrolyte-based ionic control of functional oxides

inferredcites →https://doi.org/10.1038/s41928-018-0058-4openalex-snapshot

Field-effect transistors made from solution-grown two-dimensional tellurene

inferredcites →https://doi.org/10.1039/c8cp04069aopenalex-snapshot

Thermoelectric properties of two-dimensional selenene and tellurene from group-VI elements

inferredcites →https://doi.org/10.1039/c8cs00598bopenalex-snapshot

Tellurene: its physical properties, scalable nanomanufacturing, and device applications

inferredcites →https://doi.org/10.1039/c8mh00082dopenalex-snapshot

Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers

inferredcites →https://doi.org/10.1039/c8nr07501hopenalex-snapshot

Charge-governed phase manipulation of few-layer tellurium

inferredcites →https://doi.org/10.1063/1.2772781openalex-snapshot

Insulator-to-metal transition in ZnO by electric double layer gating

inferredcites →https://doi.org/10.1073/pnas.1716781115openalex-snapshot

Full superconducting dome of strong Ising protection in gated monolayer WS 2

inferredcites →https://doi.org/10.1080/13642810108205796openalex-snapshot

The Coulomb gap: The view of an experimenter

inferredcites →https://doi.org/10.1103/physrevb.91.241304openalex-snapshot

Metallic state of low-mobility silicon at high carrier density induced by an ionic liquid

inferredcites →https://doi.org/10.1103/physrevlett.105.036802openalex-snapshot

Carrier Localization on Surfaces of Organic Semiconductors Gated with Electrolytes

inferredcites →https://doi.org/10.1103/physrevlett.107.027001openalex-snapshot

Electrostatic Control of the Evolution from a Superconducting Phase to an Insulating Phase in Ultrathin YBa 2 Cu 3 O 7 − x Films

inferredcites →https://doi.org/10.1103/physrevlett.113.246602openalex-snapshot

High Conductance 2D Transport around the Hall Mobility Peak in Electrolyte-Gated Rubrene Crystals

inferredcites →https://doi.org/10.1103/physrevlett.95.226601openalex-snapshot

Hall Effect in the Accumulation Layers on the Surface of Organic Semiconductors

inferredcites →https://doi.org/10.1103/physrevmaterials.2.111406openalex-snapshot

Giant electrostatic modification of magnetism via electrolyte-gate-induced cluster percolation in La1−xSrxCoO3−δ

inferredcites →https://doi.org/10.1103/revmodphys.57.287openalex-snapshot

Disordered electronic systems

inferredcites →https://doi.org/10.1126/science.1102896openalex-snapshot

Electric Field Effect in Atomically Thin Carbon Films

inferredcites →https://doi.org/10.1126/science.1228006openalex-snapshot

Superconducting Dome in a Gate-Tuned Band Insulator

inferredcites →https://doi.org/10.1146/annurev-matsci-070813-113407openalex-snapshot

Electrostatic Gating of Ultrathin Films

inferredcites →https://doi.org/10.1557/mrs.2012.310openalex-snapshot

Electrolyte gated single-crystal organic transistors to examine transport in the high carrier density regime

inferredcites →https://doi.org/10.48550/arxiv.1806.06550openalex-snapshot

Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.3981509openalex-extracted

inferred← citeshttps://doi.org/10.1002/adfm.202300141openalex-snapshot

Single‐Orientation Epitaxy of Quasi‐1D Tellurium Nanowires on M‐Plane Sapphire for Highly Uniform Polarization Sensitive Short‐Wave Infrared Photodetection

inferred← citeshttps://doi.org/10.1002/adma.202206939openalex-snapshot

P‐Type 2D Semiconductors for Future Electronics

inferred← citeshttps://doi.org/10.1002/adma.202408969openalex-snapshot

Electronics and Optoelectronics Based on Tellurium

inferred← citeshttps://doi.org/10.1002/adma.202507007openalex-snapshot

High‐Performance p‐Type 1D Van der Waals Electronics Prepared Through Solution Processing

inferred← citeshttps://doi.org/10.1002/adma.202519677openalex-snapshot

Dimensionality‐Driven Metal‐to‐Insulator Transition in Two‐Dimensional Antiferromagnetic R‐Cr 2 Se 3

inferred← citeshttps://doi.org/10.1002/admt.202300517openalex-snapshot

Wearable Sensors Based on Atomically Thin P‐Type Semiconductors

inferred← citeshttps://doi.org/10.1002/adom.202300098openalex-snapshot

Optical Properties of Electrochemically Gated La1−xSrxCoO3−δ as a Topotactic Phase‐Change Material

inferred← citeshttps://doi.org/10.1002/cnma.202400648openalex-snapshot

Recent Progress in Elemental Tellurium: Properties, Fabrication and Applications

inferred← citeshttps://doi.org/10.1002/smll.202002252openalex-snapshot

Recent Advances of Spatial Self‐Phase Modulation in 2D Materials and Passive Photonic Device Applications

inferred← citeshttps://doi.org/10.1002/smll.202003319openalex-snapshot

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

inferred← citeshttps://doi.org/10.1002/smll.202005801openalex-snapshot

Study of the Growth Mechanism of Solution‐Synthesized Symmetric Tellurium Nanoflakes at Atomic Resolution

inferred← citeshttps://doi.org/10.1002/smll.202513317openalex-snapshot

Wafer‐Scale (100)‐Oriented Te Single‐Crystalline Thin Films with Exceptional Electronic and Photodetection Performance

inferred← citeshttps://doi.org/10.1002/smll.73960openalex-snapshot

Elemental Tellurium Nanostructures: Controlled Synthesis and Emerging Applications in Photodetection, Electrocatalysis, and Photocatalysis

inferred← citeshttps://doi.org/10.1002/smm2.1234openalex-snapshot

Iontronic and electrochemical investigations of 2D tellurene in aqueous electrolytes

inferred← citeshttps://doi.org/10.1002/smtd.70969openalex-snapshot

Advances in Te/Se‐Based 2D p‐Type Semiconductors for Electronics and Optoelectronics

inferred← citeshttps://doi.org/10.1007/978-3-030-81827-2openalex-snapshot

Nanoporous Carbons for Soft and Flexible Energy Devices

inferred← citeshttps://doi.org/10.1007/978-3-030-81827-2_4openalex-snapshot

Bridging Electronics and Micro Energy Storage

inferred← citeshttps://doi.org/10.1007/s40820-020-00427-zopenalex-snapshot

Two-Dimensional Tellurium: Progress, Challenges, and Prospects

inferred← citeshttps://doi.org/10.1016/b978-0-12-823824-0.00016-2openalex-snapshot

Integration paths for Xenes

inferred← citeshttps://doi.org/10.1016/j.carbon.2022.01.058openalex-snapshot

Printed carbon nanotube thin film transistors based on perhydropolysilazane-derived dielectrics for low power flexible electronics

inferred← citeshttps://doi.org/10.1016/j.chip.2023.100080openalex-snapshot

Wafer-scale synthesis of two-dimensional materials for integrated electronics

inferred← citeshttps://doi.org/10.1016/j.jmmm.2024.172702openalex-snapshot

Anomalous magnetotransport behavior and weak anti localization in disordered Mn2Ni1.6Sn0.4 Heusler alloy thin films

inferred← citeshttps://doi.org/10.1016/j.nantod.2020.101059openalex-snapshot

Two-dimensional nanomaterials with engineered bandgap: Synthesis, properties, applications

inferred← citeshttps://doi.org/10.1016/j.sse.2023.108765openalex-snapshot

Ultrafast self-powered phototransistor based on Te-WSe2 van der Waals heterojunction

inferred← citeshttps://doi.org/10.1021/acs.analchem.0c04357openalex-snapshot

Sensing Food Contaminants: Advances in Analytical Methods and Techniques

inferred← citeshttps://doi.org/10.1021/acs.chemrev.3c00132openalex-snapshot

Phase Engineering of 2D Materials

inferred← citeshttps://doi.org/10.1021/acs.jpclett.0c00651openalex-snapshot

Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

inferred← citeshttps://doi.org/10.1021/acsami.0c08653openalex-snapshot

Single- versus Dual-Ion Conductors for Electric Double Layer Gating: Finite Element Modeling and Hall-Effect Measurements

inferred← citeshttps://doi.org/10.1021/acsami.2c13140openalex-snapshot

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

inferred← citeshttps://doi.org/10.1021/acsami.9b11526openalex-snapshot

Electric Double-Layer Gating of Two-Dimensional Field-Effect Transistors Using a Single-Ion Conductor

inferred← citeshttps://doi.org/10.1021/acsanm.1c03132openalex-snapshot

Anisotropic Properties of Tellurium Nanoflakes Probed by Polarized Raman and Transient Absorption Microscopy: Implications for Polarization-Sensitive Applications

inferred← citeshttps://doi.org/10.1021/acsnano.2c00222openalex-snapshot

Sub-Band Filling, Mott-like Transitions, and Ion Size Effects in C60 Single Crystal Electric Double Layer Transistors

inferred← citeshttps://doi.org/10.1021/acsnano.4c02662openalex-snapshot

Continuous Template Growth of Large-Scale Tellurene Films on 1T′-MoTe 2

inferred← citeshttps://doi.org/10.1021/acsnano.5c02397openalex-snapshot

Ion–Electron Interactions in 2D Nanomaterials-Based Artificial Synapses for Neuromorphic Applications

inferred← citeshttps://doi.org/10.1038/s41467-023-38090-8openalex-snapshot

Van der Waals nanomesh electronics on arbitrary surfaces

inferred← citeshttps://doi.org/10.1038/s41565-020-0715-4openalex-snapshot

Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene

inferred← citeshttps://doi.org/10.1038/s41578-023-00585-7openalex-snapshot

Printed transistors made of 2D material-based inks

inferred← citeshttps://doi.org/10.1038/s41928-024-01198-wopenalex-snapshot

Reporting Hall effect measurements of charge carrier mobility in emerging materials

inferred← citeshttps://doi.org/10.1039/c9ta09429fopenalex-snapshot

Tellurene based chemical sensor

inferred← citeshttps://doi.org/10.1039/c9tc03935jopenalex-snapshot

Electronics from solution-processed 2D semiconductors

inferred← citeshttps://doi.org/10.1039/d0nr07444fopenalex-snapshot

Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications

inferred← citeshttps://doi.org/10.1039/d1na00073jopenalex-snapshot

A high performance self-powered photodetector based on a 1D Te–2D WS 2 mixed-dimensional heterostructure

inferred← citeshttps://doi.org/10.1039/d2cp00070aopenalex-snapshot

Formation of stable polonium monolayers with tunable semiconducting properties driven by strong quantum size effects

inferred← citeshttps://doi.org/10.1039/d2nr07185aopenalex-snapshot

A two-dimensional Te/ReS 2 van der Waals heterostructure photodetector with high photoresponsivity and fast photoresponse

inferred← citeshttps://doi.org/10.1039/d4nr04176copenalex-snapshot

Charge noise in low Schottky barrier multilayer tellurium field-effect transistors

inferred← citeshttps://doi.org/10.1063/5.0017227openalex-snapshot

Scattering mechanisms and mobility enhancement in epitaxial BaSnO3 thin films probed via electrolyte gating

inferred← citeshttps://doi.org/10.1063/5.0017921openalex-snapshot

Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels

inferred← citeshttps://doi.org/10.1063/5.0197630openalex-snapshot

Weak antilocalization and sign inversion of magnetoresistance on CaRuO3 epitaxial films

inferred← citeshttps://doi.org/10.1088/0256-307x/43/4/040712openalex-snapshot

Gate-Tunable Strong Spin–Orbit Torque in 2D Weyl Semiconductor Tellurium-Based Heterostructures

inferred← citeshttps://doi.org/10.1088/1361-648x/ab6f84openalex-snapshot

The superconductivity and topological surface state of type-II Dirac semimetal NiTe 2

inferred← citeshttps://doi.org/10.1088/1361-6528/ab9d40openalex-snapshot

Ambipolar transport in van der Waals black arsenic field effect transistors

inferred← citeshttps://doi.org/10.1088/1674-1056/ac0a5eopenalex-snapshot

Magneto-transport properties of thin flakes of Weyl semiconductor tellurium*

inferred← citeshttps://doi.org/10.1088/1674-4926/41/8/081002openalex-snapshot

Tellurene: An elemental 2D monolayer material beyond its bulk phases without van der Waals layered structures

inferred← citeshttps://doi.org/10.1088/2053-1583/ad7ed0openalex-snapshot

Inkjet-printed p-type tellurene and n-type MoS 2 transistors for CMOS electronics

inferred← citeshttps://doi.org/10.1088/2058-8585/ac039fopenalex-snapshot

Present status of electric-double-layer thin-film transistors and their applications

inferred← citeshttps://doi.org/10.1088/2515-7639/ab8270openalex-snapshot

Electric-double-layer-gated transistors based on two-dimensional crystals: recent approaches and advances

inferred← citeshttps://doi.org/10.1088/2515-7639/ad9ee1openalex-snapshot

Realizing linear synaptic plasticity in electric double layer-gated transistors for improved predictive accuracy and efficiency in neuromorphic computing

inferred← citeshttps://doi.org/10.1088/2632-959x/ac011dopenalex-snapshot

Ionic gating in metallic superconductors: A brief review

inferred← citeshttps://doi.org/10.1103/physrevb.101.205414openalex-snapshot

Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization

inferred← citeshttps://doi.org/10.1103/physrevb.107.104401openalex-snapshot

Concurrent weak localization and double Schottky barrier across a grain boundary in bicrystal SrTiO3

inferred← citeshttps://doi.org/10.1103/physrevb.108.115305openalex-snapshot

Highly tunable Rashba spin-orbit coupling and crossover from weak localization to weak antilocalization in ionic-gated tellurium

inferred← citeshttps://doi.org/10.1109/dts48731.2020.9196160openalex-snapshot

New conditioning circuit for FDSOI-ISFET sensor

inferred← citeshttps://doi.org/10.1109/tmat.2024.3394400openalex-snapshot

Silicene Applications in Nanotechnology: From Transistors to Bendable Membranes

inferred← citeshttps://doi.org/10.1126/sciadv.abn3837openalex-snapshot

Topological phase change transistors based on tellurium Weyl semiconductor

inferred← citeshttps://doi.org/10.1515/nanoph-2019-0561openalex-snapshot

Advances in photonics of recently developed Xenes

inferred← citeshttps://doi.org/10.3390/electronics14091811openalex-snapshot

Critical Considerations for Observing Cross Quantum Capacitance in Electric-Double-Layer-Gated Transistors Based on Two-Dimensional Crystals

Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.