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Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices
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High‐k Gate Dielectrics for CMOS Technology
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All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator
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Defect‐Mediated Polarization Switching in Ferroelectrics and Related Materials: From Mesoscopic Mechanisms to Atomistic Control
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Flexible Non‐Volatile Ferroelectric Polymer Memory with Gate‐Controlled Multilevel Operation
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MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit
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In‐Plane Ferroelectricity in Thin Flakes of Van der Waals Hybrid Perovskite
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Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier
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Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
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Ferroelectric Negative Capacitance Field Effect Transistor
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Recent Progress in Two‐Dimensional Ferroelectric Materials
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Wafer bonding : applications and technology
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Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
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Towards Oxide Electronics: a Roadmap
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Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors
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A review of emerging non-volatile memory (NVM) technologies and applications
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Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology
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The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure
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Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma
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Introduction to Quantum Mechanics
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Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface Engineering
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Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices
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Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2–BaTiO3–SrRuO3 Tunnel Junctions
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Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction
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Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS 2 Transistors
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Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In 2 Se 3 Nanoflakes
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Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In 2 Se 3
inferredcites →https://doi.org/10.1021/acs.nanolett.8b00816openalex-snapshot
Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor
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Molecular-Beam Epitaxy of Two-Dimensional In 2 Se 3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction
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Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
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Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
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A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction
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Engineering of Ferroelectric HfO2–ZrO2 Nanolaminates
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Soluble, Exfoliated Hexagonal Boron Nitride Nanosheets
inferredcites →https://doi.org/10.1021/ma301460hopenalex-snapshot
Ferroelectric Phase Diagram of PVDF:PMMA
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Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
inferredcites →https://doi.org/10.1021/nl103650bopenalex-snapshot
Organic Multiferroic Tunnel Junctions with Ferroelectric Poly(vinylidene fluoride) Barriers
inferredcites →https://doi.org/10.1021/nl302015vopenalex-snapshot
Integrated Circuits Based on Bilayer MoS 2 Transistors
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Ferroelectricity in Simple Binary ZrO 2 and HfO 2
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Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures
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Effective Nanometer Airgap of NEMS Devices Using Negative Capacitance of Ferroelectric Materials
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Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
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Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure
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Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
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Nanoscale Memristor Device as Synapse in Neuromorphic Systems
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Giant Electroresistance of Super-tetragonal BiFeO 3 -Based Ferroelectric Tunnel Junctions
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Origin of ferroelectricity in perovskite oxides
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Two-dimensional semiconductors for transistors
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Critical thickness for ferroelectricity in perovskite ultrathin films
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Giant tunnel electroresistance for non-destructive readout of ferroelectric states
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Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes
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Learning through ferroelectric domain dynamics in solid-state synapses
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Revealing the role of defects in ferroelectric switching with atomic resolution
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Ferroelectric tunnel junctions for information storage and processing
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High-performance solution-processed polymer ferroelectric field-effect transistors
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Enhancement of ferroelectricity at metal–oxide interfaces
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Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer
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Reversible electrical switching of spin polarization in multiferroic tunnel junctions
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Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface
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Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films
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Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
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Negative capacitance in a ferroelectric capacitor
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Boron nitride substrates for high-quality graphene electronics
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Solid-state memories based on ferroelectric tunnel junctions
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Interfacial phase-change memory
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Ferroelectric devices show potential
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Memristive devices for computing
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Electronics based on two-dimensional materials
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A new spin on magnetic memories
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Memory leads the way to better computing
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Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
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Sub-nanosecond memristor based on ferroelectric tunnel junction
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Steep-slope hysteresis-free negative capacitance MoS2 transistors
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Ferroelectric negative capacitance
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Ferroelectric switching of a two-dimensional metal
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Enhanced ferroelectricity in ultrathin films grown directly on silicon
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Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating
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A ferroelectric semiconductor field-effect transistor
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The future of ferroelectric field-effect transistor technology
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Low-power linear computation using nonlinear ferroelectric tunnel junction memristors
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Polarization fatigue of organic ferroelectric capacitors
inferredcites →https://doi.org/10.1038/srep12576openalex-snapshot
Functional ferroelectric tunnel junctions on silicon
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Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors
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Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors
inferredcites →https://doi.org/10.1039/c3tc31774aopenalex-snapshot
Controlling the microstructure of poly(vinylidene-fluoride) (PVDF) thin films for microelectronics
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A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement
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Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2 /HfO 2 gate dielectric stack
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Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
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Processing of ferroelectric polymers for microelectronics: from morphological analysis to functional devices
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Emerging two-dimensional monoelemental materials (Xenes) for biomedical applications
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A switchable diode based on room-temperature two-dimensional ferroelectric {\alpha}-In2Se3 thin layers
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High dielectric constant oxides
inferredcites →https://doi.org/10.1063/1.107488openalex-snapshot
Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures
inferredcites →https://doi.org/10.1063/1.121008openalex-snapshot
SrBi 2 Ta 2 O 9 memory capacitor on Si with a silicon nitride buffer
inferredcites →https://doi.org/10.1063/1.124255openalex-snapshot
Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer
inferredcites →https://doi.org/10.1063/1.124771openalex-snapshot
Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates
inferredcites →https://doi.org/10.1063/1.1380246openalex-snapshot
Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures
inferredcites →https://doi.org/10.1063/1.1381542openalex-snapshot
Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features
inferredcites →https://doi.org/10.1063/1.1539928openalex-snapshot
Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates
inferredcites →https://doi.org/10.1063/1.1558206openalex-snapshot
Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrOx insulator layer
inferredcites →https://doi.org/10.1063/1.1579559openalex-snapshot
Effects of scaling the film thickness on the ferroelectric properties of SrBi2Ta2O9 ultra thin films
inferredcites →https://doi.org/10.1063/1.1627944openalex-snapshot
Resistive switching in metal–ferroelectric–metal junctions
inferredcites →https://doi.org/10.1063/1.1644917openalex-snapshot
Ultrafast polarization switching in thin-film ferroelectrics
inferredcites →https://doi.org/10.1063/1.1722518openalex-snapshot
Switching Time in Ferroelectric BaTiO3 and Its Dependence on Crystal Thickness
inferredcites →https://doi.org/10.1063/1.1722712openalex-snapshot
Electrostatic Considerations in BaTiO3 Domain Formation during Polarization Reversal
inferredcites →https://doi.org/10.1063/1.1771458openalex-snapshot
Influence of buffer layer thickness on memory effects of SrBi2Ta2O9∕SiN∕Si structures
inferredcites →https://doi.org/10.1063/1.1806274openalex-snapshot
Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors
inferredcites →https://doi.org/10.1063/1.2177549openalex-snapshot
Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.2336999openalex-snapshot
Ferroelectric thin films: Review of materials, properties, and applications
inferredcites →https://doi.org/10.1063/1.2337359openalex-snapshot
Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory
inferredcites →https://doi.org/10.1063/1.2337361openalex-snapshot
Integration of lead zirconium titanate thin films for high density ferroelectric random access memory
inferredcites →https://doi.org/10.1063/1.2408650openalex-snapshot
Depolarizing field and “real” hysteresis loops in nanometer-scale ferroelectric films
inferredcites →https://doi.org/10.1063/1.2794335openalex-snapshot
Characterization of metal-ferroelectric (BiFeO3)-insulator (ZrO2)-silicon capacitors for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.2924434openalex-snapshot
Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.3055415openalex-snapshot
Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.3056603openalex-snapshot
Polarization fatigue in ferroelectric thin films and related materials
inferredcites →https://doi.org/10.1063/1.3065474openalex-snapshot
Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0.8Bi2.2Ta2O9(001)/SrTiO3(100)/Si(100) structures
inferredcites →https://doi.org/10.1063/1.3106663openalex-snapshot
Polarization retention on short, intermediate, and long time scales in ferroelectric thin films
inferredcites →https://doi.org/10.1063/1.3114403openalex-snapshot
Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.3147859openalex-snapshot
Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness
inferredcites →https://doi.org/10.1063/1.3319591openalex-snapshot
Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
inferredcites →https://doi.org/10.1063/1.351910openalex-snapshot
Physics of the ferroelectric nonvolatile memory field effect transistor
inferredcites →https://doi.org/10.1063/1.355875openalex-snapshot
Effects of operating conditions on the fast-decay component of the retained polarization in lead zirconate titanate thin films
inferredcites →https://doi.org/10.1063/1.3609323openalex-snapshot
Retention mechanism study of the ferroelectric field effect transistor
inferredcites →https://doi.org/10.1063/1.3622656openalex-snapshot
Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.3623768openalex-snapshot
Ferroelectric domain structure of PbZr0.35Ti0.65O3 single crystals by piezoresponse force microscopy
inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.3634072openalex-snapshot
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
inferredcites →https://doi.org/10.1063/1.3636417openalex-snapshot
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.3667205openalex-snapshot
Ferroelectricity in yttrium-doped hafnium oxide
inferredcites →https://doi.org/10.1063/1.372364openalex-snapshot
Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure
inferredcites →https://doi.org/10.1063/1.4704179openalex-snapshot
Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
inferredcites →https://doi.org/10.1063/1.4726120openalex-snapshot
Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers
inferredcites →https://doi.org/10.1063/1.4756918openalex-snapshot
Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO3 film and Ag nanoelectrodes
inferredcites →https://doi.org/10.1063/1.4792525openalex-snapshot
Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions
inferredcites →https://doi.org/10.1063/1.4818626openalex-snapshot
Low voltage extrinsic switching of ferroelectric δ-PVDF ultra-thin films
inferredcites →https://doi.org/10.1063/1.4861059openalex-snapshot
Extreme sub-threshold swing in tunnelling relays
inferredcites →https://doi.org/10.1063/1.4863231openalex-snapshot
Investigation of Pt/Pb(Zr0.2Ti0.8)O3/Ti-Al-O/Si heterostructure as metal/ferroelectric/insulator/semiconductor
inferredcites →https://doi.org/10.1063/1.4866655openalex-snapshot
Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors
inferredcites →https://doi.org/10.1063/1.4867975openalex-snapshot
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Accelerated domain switching speed in single-crystal LiNbO3 thin films
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Ferroelectricity in undoped hafnium oxide
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FERROELECTRIC PROPERTIES OF Ba0.8Sr0.2TiO3 THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING
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Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking
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What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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