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Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1007/bf00615935openalex-snapshot
Schottky barrier and pn-junctionI/V plots ? Small signal evaluation
inferredcites →https://doi.org/10.1016/0039-6028(94)00800-0openalex-snapshot
On the correlation between the scanning tunneling microscopy image imperfections and point defects of layered chalcogenides 2HMX2 (M = Mo, W; X = S, Se)
inferredcites →https://doi.org/10.1016/j.elspec.2012.12.005openalex-snapshot
Atomic-scale structures and electronic states of defects on Ar+-ion irradiated MoS2
inferredcites →https://doi.org/10.1016/j.mssp.2015.07.062openalex-snapshot
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy
inferredcites →https://doi.org/10.1016/j.tsf.2016.08.068openalex-snapshot
Atomically-thin layered films for device applications based upon 2D TMDC materials
inferredcites →https://doi.org/10.1016/s0039-6028(01)00904-9openalex-snapshot
Scanning tunneling microscope images of locally modulated structures in layered materials, MoS2(0 0 0 1) and MoSe2(0 0 0 1), induced by impurity atoms
inferredcites →https://doi.org/10.1021/acs.jpcc.6b02073openalex-snapshot
Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
inferredcites →https://doi.org/10.1021/acs.jpcc.6b04473openalex-snapshot
Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance
inferredcites →https://doi.org/10.1021/acsami.5b01778openalex-snapshot
Surface Defects on Natural MoS2
inferredcites →https://doi.org/10.1021/acsami.5b06897openalex-snapshot
3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides
inferredcites →https://doi.org/10.1021/acsami.6b00275openalex-snapshot
MoS 2 –Titanium Contact Interface Reactions
inferredcites →https://doi.org/10.1021/acsami.6b08847openalex-snapshot
Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability
inferredcites →https://doi.org/10.1021/acsnano.5b03309openalex-snapshot
Impurities and Electronic Property Variations of Natural MoS2Crystal Surfaces
inferredcites →https://doi.org/10.1021/acsnano.5b05854openalex-snapshot
Visualizing Point Defects in Transition-Metal Dichalcogenides Using Optical Microscopy
inferredcites →https://doi.org/10.1021/acsnano.6b07159openalex-snapshot
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
inferredcites →https://doi.org/10.1021/cr300263aopenalex-snapshot
Graphene-Like Two-Dimensional Materials
inferredcites →https://doi.org/10.1021/nl301485qopenalex-snapshot
MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
inferredcites →https://doi.org/10.1021/nl302015vopenalex-snapshot
Integrated Circuits Based on Bilayer MoS 2 Transistors
inferredcites →https://doi.org/10.1021/nl303583vopenalex-snapshot
High Performance Multilayer MoS2 Transistors with Scandium Contacts
inferredcites →https://doi.org/10.1021/nl4007479openalex-snapshot
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
inferredcites →https://doi.org/10.1021/nl403465vopenalex-snapshot
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS 2 Interfaces
inferredcites →https://doi.org/10.1021/nl501659nopenalex-snapshot
Bandgap, Mid-Gap States, and Gating Effects in MoS2
inferredcites →https://doi.org/10.1021/nl903868wopenalex-snapshot
Emerging Photoluminescence in Monolayer MoS 2
inferredcites →https://doi.org/10.1021/nn2024557openalex-snapshot
Single-Layer MoS 2 Phototransistors
inferredcites →https://doi.org/10.1021/nn203715copenalex-snapshot
Integrated Circuits and Logic Operations Based on Single-Layer MoS 2
inferredcites →https://doi.org/10.1021/nn303513copenalex-snapshot
Channel Length Scaling of MoS 2 MOSFETs
inferredcites →https://doi.org/10.1021/nn500044qopenalex-snapshot
Defect-Dominated Doping and Contact Resistance in MoS 2
inferredcites →https://doi.org/10.1021/nn506924jopenalex-snapshot
Layer Number Dependence of MoS2 Photoconductivity Using Photocurrent Spectral Atomic Force Microscopic Imaging
inferredcites →https://doi.org/10.1038/nature04233openalex-snapshot
Two-dimensional gas of massless Dirac fermions in graphene
inferredcites →https://doi.org/10.1038/nature07719openalex-snapshot
Large-scale pattern growth of graphene films for stretchable transparent electrodes
inferredcites →https://doi.org/10.1038/ncomms7293openalex-snapshot
Exploring atomic defects in molybdenum disulphide monolayers
inferredcites →https://doi.org/10.1038/nmat4452openalex-snapshot
Electrical contacts to two-dimensional semiconductors
inferredcites →https://doi.org/10.1038/nnano.2012.193openalex-snapshot
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
inferredcites →https://doi.org/10.1038/nnano.2013.100openalex-snapshot
Ultrasensitive photodetectors based on monolayer MoS2
inferredcites →https://doi.org/10.1038/nnano.2013.30openalex-snapshot
Measurement of mobility in dual-gated MoS2 transistors
inferredcites →https://doi.org/10.1038/nnano.2013.31openalex-snapshot
Reply to 'Measurement of mobility in dual-gated MoS2 transistors'
inferredcites →https://doi.org/10.1038/srep21786openalex-snapshot
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
inferredcites →https://doi.org/10.1038/srep43451openalex-snapshot
Graphene Visualizes the Ion Distribution on Air-Cleaved Mica
inferredcites →https://doi.org/10.1039/c0nr00580kopenalex-snapshot
Resistive switching memory: observations with scanning probe microscopy
inferredcites →https://doi.org/10.1039/c5cs00507hopenalex-snapshot
Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges
inferredcites →https://doi.org/10.1063/1.119044openalex-snapshot
Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy
inferredcites →https://doi.org/10.1063/1.1339260openalex-snapshot
Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy
inferredcites →https://doi.org/10.1063/1.1702952openalex-snapshot
Surface States and Barrier Height of Metal-Semiconductor Systems
inferredcites →https://doi.org/10.1063/1.3609317openalex-snapshot
Probing nanoscale conductance of monolayer graphene under pressure
inferredcites →https://doi.org/10.1063/1.369590openalex-snapshot
Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule
inferredcites →https://doi.org/10.1063/1.4824893openalex-snapshot
Sulfur vacancies in monolayer MoS2 and its electrical contacts
inferredcites →https://doi.org/10.1063/1.4827301openalex-snapshot
Mechanically modulated tunneling resistance in monolayer MoS2
inferredcites →https://doi.org/10.1063/1.4873389openalex-snapshot
Strain effects on in-plane conductance of the topological insulator Bi2Te3
inferredcites →https://doi.org/10.1063/1.4895767openalex-snapshot
Schottky barrier heights for Au and Pd contacts to MoS2
inferredcites →https://doi.org/10.1063/1.4901467openalex-snapshot
Extraction of the Schottky parameters in metal-semiconductor-metal diodes from a single current-voltage measurement
inferredcites →https://doi.org/10.1063/1.4919524openalex-snapshot
Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts
inferredcites →https://doi.org/10.1063/1.4927853openalex-snapshot
Role of vacancies in tuning the electronic properties of Au-MoS2 contact
inferredcites →https://doi.org/10.1063/1.4972233openalex-snapshot
Local conductance mapping of water-intercalated graphene on mica
inferredcites →https://doi.org/10.1073/pnas.0502848102openalex-snapshot
Two-dimensional atomic crystals
inferredcites →https://doi.org/10.1088/0953-8984/26/1/012001openalex-snapshot
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
inferredcites →https://doi.org/10.1088/0953-8984/27/15/154202openalex-snapshot
Influence of the local environment on Mn acceptors in GaAs
inferredcites →https://doi.org/10.1088/0957-4484/25/37/375703openalex-snapshot
Impact of intrinsic atomic defects on the electronic structure of MoS2monolayers
inferredcites →https://doi.org/10.1088/0957-4484/27/10/105702openalex-snapshot
Theoretical characterisation of point defects on a MoS 2 monolayer by scanning tunnelling microscopy
inferredcites →https://doi.org/10.1103/physrevb.64.205310openalex-snapshot
Formation of an electric dipole at metal-semiconductor interfaces
inferredcites →https://doi.org/10.1103/physrevb.89.205417openalex-snapshot
Stability and electronic structures of native defects in single-layer MoS 2
inferredcites →https://doi.org/10.1103/physrevb.91.125304openalex-snapshot
Native defects in bulk and monolayer MoS 2 from first principles
inferredcites →https://doi.org/10.1103/physrevb.92.081307openalex-snapshot
Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS2 multilayers
inferredcites →https://doi.org/10.1103/physrevlett.105.136805openalex-snapshot
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
inferredcites →https://doi.org/10.1103/physrevlett.115.136803openalex-snapshot
Local Spectroscopic Characterization of Spin and Layer Polarization in WSe2
inferredcites →https://doi.org/10.1103/physrevx.4.031005openalex-snapshot
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
inferredcites →https://doi.org/10.1109/jproc.2013.2253435openalex-snapshot
Tunneling Transistors Based on Graphene and 2-D Crystals
inferredcites →https://doi.org/10.1116/1.4818426openalex-snapshot
Band offsets, Schottky barrier heights, and their effects on electronic devices
inferredcites →https://doi.org/10.1126/science.1102896openalex-snapshot
Electric Field Effect in Atomically Thin Carbon Films
inferredcites →https://doi.org/10.1143/jjap.34.3363openalex-snapshot
Investigations of Electronic Structures of Defects Introduced by Ar Ion Bombardments on MoS 2 by Scanning Tunneling Microscopy
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Strong Fermi-Level Pinning in GeS–Metal Nanocontacts
inferred← citeshttps://doi.org/10.1021/acs.jpcc.3c03761openalex-snapshot
First-Principles Investigation of MXene/MoSi2N4 van der Waals Heterostructures: Strong Fermi Level Pinning Effect Resulting in Ohmic Contact with Low Contact Resistance
inferred← citeshttps://doi.org/10.1021/acs.jpcc.5c05834openalex-snapshot
Probing the Electronic Band Structure of Emerging Chalcogenide Absorbers for Photoelectrochemistry
inferred← citeshttps://doi.org/10.1021/acs.jpcc.8b08713openalex-snapshot
Nanoscale Investigation of Defects and Oxidation of HfSe2
inferred← citeshttps://doi.org/10.1021/acs.jpcc.8b10971openalex-snapshot
Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides
inferred← citeshttps://doi.org/10.1021/acs.jpcc.9b04355openalex-snapshot
Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
inferred← citeshttps://doi.org/10.1021/acs.jpclett.9b00862openalex-snapshot
Environmentally Controlled Charge Carrier Injection Mechanisms of Metal/WS2 Junctions
inferred← citeshttps://doi.org/10.1021/acs.nanolett.1c00677openalex-snapshot
Charge Density Waves in Electron-Doped Molybdenum Disulfide
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c06407openalex-snapshot
Photolithography-Induced Doping and Interface Modulation for High-Performance Monolayer WSe2 P-Type Transistors
inferred← citeshttps://doi.org/10.1021/acs.nanolett.6c00871openalex-snapshot
Near-Ideal van der Waals NbSe 2 Contacts for WSe 2 CMOS Electronics
inferred← citeshttps://doi.org/10.1021/acs.nanolett.6c02384openalex-snapshot
Intrinsic Fermi Level Pinning and Reversible Depinning at Ultralow-Defect Epitaxial MoSe2/Au(111) Interfaces
inferred← citeshttps://doi.org/10.1021/acs.nanolett.8b04636openalex-snapshot
Barrier Inhomogeneities in Atomic Contacts on WS2
inferred← citeshttps://doi.org/10.1021/acs.nanolett.9b03337openalex-snapshot
The Critical Role of Electrolyte Gating on the Hydrogen Evolution Performance of Monolayer MoS2
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00901openalex-snapshot
Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00489openalex-snapshot
Iron Pyrite in Photovoltaics: A Review on Recent Trends and Challenges
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00609openalex-snapshot
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
inferred← citeshttps://doi.org/10.1021/acsaelm.2c01176openalex-snapshot
High-Strain-Induced Local Modification of the Electronic Properties of VO2 Thin Films
inferred← citeshttps://doi.org/10.1021/acsaelm.4c00787openalex-snapshot
Interface Traps of Boron Nitride Gated Transition-Metal Dichalcogenide Channel Field-Effect Transistors by Temperature Dependent Pulse Pumping Method
inferred← citeshttps://doi.org/10.1021/acsaelm.4c01583openalex-snapshot
Co-TMDC MTJs: A New Frontier in Spintronics
inferred← citeshttps://doi.org/10.1021/acsaelm.5c00392openalex-snapshot
Contact Engineering in 2D Materials via an nm -Thick Hydrosoluble Polymer Insertion
inferred← citeshttps://doi.org/10.1021/acsaelm.5c01320openalex-snapshot
Effect of Temperature on the Optoelectrical Properties of Photodetectors Based on Mo(S X Se 1– X ) 2 Alloys
inferred← citeshttps://doi.org/10.1021/acsaem.6c00243openalex-snapshot
Understanding the Optoelectronic Properties of Crown-Ether Perovskites and Their Compositionally Substituted Mixed-Halide Derivatives
inferred← citeshttps://doi.org/10.1021/acsami.0c07193openalex-snapshot
Enhanced NO 2 Sensitivity in Schottky-Contacted n-Type SnS 2 Gas Sensors
inferred← citeshttps://doi.org/10.1021/acsami.0c20108openalex-snapshot
Contact Engineering of Vertically Grown ReS2 with Schottky Barrier Modulation
inferred← citeshttps://doi.org/10.1021/acsami.1c07545openalex-snapshot
Learning with Delayed Rewards—A Case Study on Inverse Defect Design in 2D Materials
inferred← citeshttps://doi.org/10.1021/acsami.1c19544openalex-snapshot
Effect of Defects on Optical, Electronic, and Interface Properties of NiO/SnO2 Heterostructures: Dual-Functional Solar Photocatalytic H2 Production and RhB Degradation
inferred← citeshttps://doi.org/10.1021/acsami.2c18514openalex-snapshot
Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals
inferred← citeshttps://doi.org/10.1021/acsami.3c03057openalex-snapshot
Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism
inferred← citeshttps://doi.org/10.1021/acsami.3c12973openalex-snapshot
Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2
inferred← citeshttps://doi.org/10.1021/acsami.4c02294openalex-snapshot
An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions
inferred← citeshttps://doi.org/10.1021/acsami.4c10082openalex-snapshot
Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2
inferred← citeshttps://doi.org/10.1021/acsami.5c09185openalex-snapshot
Investigating Local Electron Transport Dynamics in Layer-Dependent MoS2/RGO Heterostructures Using Conductive Atomic Force Microscopy
inferred← citeshttps://doi.org/10.1021/acsami.6c05536openalex-snapshot
PVA-Mediated Transfer of MoS2 and Au Electrodes: A Lithography-Free Route to Ultraclean van der Waals Interfaces for High-Performance Electronics and Optoelectronics
inferred← citeshttps://doi.org/10.1021/acsami.6c10548openalex-snapshot
Strain-Controlled Interfacial Transport Governs Contact Resistance in Top and Edge n/p-Type Metal-TMD Junctions
inferred← citeshttps://doi.org/10.1021/acsami.7b10967openalex-snapshot
Promising Approach for High-Performance MoS2 Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers
inferred← citeshttps://doi.org/10.1021/acsami.7b18454openalex-snapshot
Determination of Carrier Polarity in Fowler–Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface
inferred← citeshttps://doi.org/10.1021/acsami.8b01506openalex-snapshot
Local Conduction in Mo x W1– x Se2: The Role of Stacking Faults, Defects, and Alloying
inferred← citeshttps://doi.org/10.1021/acsami.8b06728openalex-snapshot
Comparison of Electrical and Photoelectrical Properties of ReS 2 Field-Effect Transistors on Different Dielectric Substrates
inferred← citeshttps://doi.org/10.1021/acsami.8b10569openalex-snapshot
Generating Sub-nanometer Pores in Single-Layer MoS2 by Heavy-Ion Bombardment for Gas Separation: A Theoretical Perspective
inferred← citeshttps://doi.org/10.1021/acsami.8b13112openalex-snapshot
Impact of Synthesized MoS2 Wafer-Scale Quality on Fermi Level Pinning in Vertical Schottky-Barrier Heterostructures
inferred← citeshttps://doi.org/10.1021/acsami.9b10861openalex-snapshot
Improved Sensitivity in Schottky Contacted Two-Dimensional MoS2 Gas Sensor
inferred← citeshttps://doi.org/10.1021/acsami.9b19561openalex-snapshot
Synthesis of High-Quality Monolayer MoS 2 by Direct Liquid Injection
inferred← citeshttps://doi.org/10.1021/acsami.9b19681openalex-snapshot
Defect-Assisted Contact Property Enhancement in a Molybdenum Disulfide Monolayer
inferred← citeshttps://doi.org/10.1021/acsanm.4c01729openalex-snapshot
Scalable Deposition of MoS2 Thin Films with Controlled Doping for Photodetectors
inferred← citeshttps://doi.org/10.1021/acsanm.9b00200openalex-snapshot
Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors
inferred← citeshttps://doi.org/10.1021/acsnano.0c03515openalex-snapshot
Uncovering the Effects of Metal Contacts on Monolayer MoS2
inferred← citeshttps://doi.org/10.1021/acsnano.0c04192openalex-snapshot
Understanding and Mapping Sensitivity in MoS2 Field-Effect-Transistor-Based Sensors
inferred← citeshttps://doi.org/10.1021/acsnano.0c06630openalex-snapshot
Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications
inferred← citeshttps://doi.org/10.1021/acsnano.1c04825openalex-snapshot
The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening
inferred← citeshttps://doi.org/10.1021/acsnano.2c08321openalex-snapshot
True Atomic-Resolution Surface Imaging and Manipulation under Ambient Conditions via Conductive Atomic Force Microscopy
inferred← citeshttps://doi.org/10.1021/acsnano.3c05056openalex-snapshot
Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials
inferred← citeshttps://doi.org/10.1021/acsnano.3c07405openalex-snapshot
Atomic Defect Quantification by Lateral Force Microscopy
inferred← citeshttps://doi.org/10.1021/acsnano.4c12927openalex-snapshot
Back-End-of-Line-Compatible Passivation of Sulfur Vacancies in MoS2 Transistors Using Electron-Withdrawing Benzenethiol
inferred← citeshttps://doi.org/10.1021/acsnano.5c02341openalex-snapshot
MoS2 Transistors with 4 nm hBN Gate Dielectric and 0.46 V Threshold Voltage
inferred← citeshttps://doi.org/10.1021/acsnano.5c03676openalex-snapshot
Direct Visualization of Metal-Induced Gap State Distribution and Valley Band Evolution at Metal Versus Semimetal MoS2 Interfaces
inferred← citeshttps://doi.org/10.1021/acsnano.6c02189openalex-snapshot
Revisiting the Schottky-Mott Relation for Metal/Transition Metal Dichalcogenide Interfaces: The Role of Interface Dipoles
inferred← citeshttps://doi.org/10.1021/acsnano.7b08566openalex-snapshot
Electrical Characterization of Discrete Defects and Impact of Defect Density on Photoluminescence in Monolayer WS2
inferred← citeshttps://doi.org/10.1021/acsnano.8b02844openalex-snapshot
Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy
inferred← citeshttps://doi.org/10.1021/acsnano.9b02540openalex-snapshot
Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers
inferred← citeshttps://doi.org/10.1021/acsnano.9b05965openalex-snapshot
Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors
inferred← citeshttps://doi.org/10.1021/acsomega.1c01570openalex-snapshot
Large-Area, Two-Dimensional MoS2 Exfoliated on Gold: Direct Experimental Access to the Metal–Semiconductor Interface
inferred← citeshttps://doi.org/10.1021/acsomega.6c06145openalex-snapshot
Localized States’ Role in MoS2 Few-Layer Device: A Study by Schottky Capacitance Spectroscopy and Thermally Stimulated Current
inferred← citeshttps://doi.org/10.1021/cbmi.5c00181openalex-snapshot
Unexpected Inner-Sphere Versus Outer-Sphere Redox in Bilayer Molybdenum Disulfide (MoS 2 ) from Correlative Electrochemical Imaging
inferred← citeshttps://doi.org/10.1038/s41467-025-57986-1openalex-snapshot
Large-scale alkali-assisted growth of monolayer and bilayer WSe2 with a low defect density
inferred← citeshttps://doi.org/10.1038/s41467-026-75151-0openalex-snapshot
Unveiling surface and subsurface atomic vacancies in MoS2 with lateral force microscopy
inferred← citeshttps://doi.org/10.1038/s41557-018-0136-2openalex-snapshot
Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions
inferred← citeshttps://doi.org/10.1038/s41567-026-03425-xopenalex-snapshot
Real-space imaging of moiré-confined excitons in twisted bilayer MoS2
inferred← citeshttps://doi.org/10.1038/s41597-023-02004-6openalex-snapshot
Deep learning based atomic defect detection framework for two-dimensional materials
inferred← citeshttps://doi.org/10.1038/s41598-020-61673-0openalex-snapshot
The effect of metallic substrates on the optical properties of monolayer MoSe2
inferred← citeshttps://doi.org/10.1038/s41598-022-22913-7openalex-snapshot
The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study
inferred← citeshttps://doi.org/10.1038/s41598-024-79750-zopenalex-snapshot
Thermally stable Bi2Te3/WSe2 Van Der Waals contacts for pMOSFETs application
inferred← citeshttps://doi.org/10.1038/s41598-025-12618-yopenalex-snapshot
Interfacial doping engineering on electronic states and electrical properties of MoS2/Au contact
inferred← citeshttps://doi.org/10.1038/s41699-019-0133-3openalex-snapshot
Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
inferred← citeshttps://doi.org/10.1038/s41699-021-00253-wopenalex-snapshot
Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
inferred← citeshttps://doi.org/10.1038/s41699-022-00349-xopenalex-snapshot
Origin of contact polarity at metal-2D transition metal dichalcogenide interfaces
inferred← citeshttps://doi.org/10.1038/s41699-023-00424-xopenalex-snapshot
Unveiling the origin of n-type doping of natural MoS2: carbon
inferred← citeshttps://doi.org/10.1038/s41928-021-00685-8openalex-snapshot
Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition
inferred← citeshttps://doi.org/10.1038/s41928-022-00764-4openalex-snapshot
Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
inferred← citeshttps://doi.org/10.1038/s42005-019-0212-yopenalex-snapshot
Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants
inferred← citeshttps://doi.org/10.1039/c7cs00828gopenalex-snapshot
Contact engineering for 2D materials and devices
inferred← citeshttps://doi.org/10.1039/c8cp02300jopenalex-snapshot
Modified MXene: promising electrode materials for constructing Ohmic contacts with MoS 2 for electronic device applications
inferred← citeshttps://doi.org/10.1039/c8cp02365dopenalex-snapshot
Electronic-dimensionality reduction of bulk MoS 2 by hydrogen treatment
inferred← citeshttps://doi.org/10.1039/c8cp06478dopenalex-snapshot
Tuning electronic structure of monolayer InP 3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy
inferred← citeshttps://doi.org/10.1039/c8dt02581aopenalex-snapshot
A ZnO/ZnFe 2 O 4 uniform core–shell heterojunction with a tubular structure modified by NiOOH for efficient photoelectrochemical water splitting
inferred← citeshttps://doi.org/10.1039/c8nr01711eopenalex-snapshot
Parameter control for enhanced peak-to-valley current ratio in a MoS 2 /MoTe 2 van der Waals heterostructure
inferred← citeshttps://doi.org/10.1039/c8ra01513aopenalex-snapshot
Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance
inferred← citeshttps://doi.org/10.1039/c8ra09656bopenalex-snapshot
Formation of an MoTe 2 based Schottky junction employing ultra-low and high resistive metal contacts
inferred← citeshttps://doi.org/10.1039/c9nr00574aopenalex-snapshot
Control of the metal/WS 2 contact properties using 2-dimensional buffer layers
inferred← citeshttps://doi.org/10.1039/c9nr04567hopenalex-snapshot
Metallic contact induced van der Waals gap in a MoS 2 FET
inferred← citeshttps://doi.org/10.1039/c9nr09662kopenalex-snapshot
Achieving a superlubricating ohmic sliding electrical contact via a 2D heterointerface: a computational investigation
inferred← citeshttps://doi.org/10.1039/d0na00795aopenalex-snapshot
Schottky barrier lowering due to interface states in 2D heterophase devices
inferred← citeshttps://doi.org/10.1039/d0nr04633gopenalex-snapshot
P–N conversion of charge carrier types and high photoresponsive performance of composition modulated ternary alloy W(S x Se 1−x ) 2 field-effect transistors
inferred← citeshttps://doi.org/10.1039/d0ta04297hopenalex-snapshot
Defect engineering in photocatalysis: formation, chemistry, optoelectronics, and interface studies
inferred← citeshttps://doi.org/10.1039/d0tc02166kopenalex-snapshot
van der Waals integration of AZO/MoS 2 ohmic junctions toward high-performance transparent 2D electronics
inferred← citeshttps://doi.org/10.1039/d1cp05602fopenalex-snapshot
High-performance, self-powered flexible MoS 2 photodetectors with asymmetric van der Waals gaps
inferred← citeshttps://doi.org/10.1039/d1tc01463copenalex-snapshot
Fermi-level depinning of 2D transition metal dichalcogenide transistors
inferred← citeshttps://doi.org/10.1039/d1tc04148gopenalex-snapshot
Anomalously persistent p-type behavior of WSe 2 field-effect transistors by oxidized edge-induced Fermi-level pinning
inferred← citeshttps://doi.org/10.1039/d2ra00668eopenalex-snapshot
Intriguing interfacial characteristics of the CS contact with MX 2 (M = Mo, W; X = S, Se, Te) and MXY ((X ≠ Y) = S, Se, Te) monolayers
inferred← citeshttps://doi.org/10.1039/d3cp06112dopenalex-snapshot
Designing barrier-free metal/MoS 2 contacts through electrene insertion
inferred← citeshttps://doi.org/10.1039/d3cp06189bopenalex-snapshot
Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability
inferred← citeshttps://doi.org/10.1039/d3nr04626eopenalex-snapshot
Broadening spectral responses and achieving environmental stability in SnS 2 /Ag-NPs/HfO 2 flexible phototransistors
inferred← citeshttps://doi.org/10.1039/d3tc00739aopenalex-snapshot
Achieving real Ohmic contact by the dual protection of outer layer atoms and surface functionalization in 2D metal Mxenes/MoSi 2 N 4 heterostructures
inferred← citeshttps://doi.org/10.1039/d4lf00325jopenalex-snapshot
Promoting combined AFM-electrochemistry techniques for analysis of charge transport at grain boundaries of ceramic components in electrochemical cells
inferred← citeshttps://doi.org/10.1039/d5nr00284bopenalex-snapshot
Electrical properties of collapsed MoS 2 nanotubes
inferred← citeshttps://doi.org/10.1063/1.4995690openalex-snapshot
On the nature of AFM tip metal-MoS2 contact; effect of single layer character and tip force
inferred← citeshttps://doi.org/10.1063/1.5026397openalex-snapshot
Out-of-plane electron transport in finite layer MoS2
inferred← citeshttps://doi.org/10.1063/1.5048099openalex-snapshot
Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET
inferred← citeshttps://doi.org/10.1063/5.0016958openalex-snapshot
Defect-state mediated excitonic transitions and associated electrical nature in exfoliated MoS2 nanostructures
inferred← citeshttps://doi.org/10.1063/5.0048592openalex-snapshot
MoS2|ZnO isotype heterostructure diode: Carrier transport and band alignment
inferred← citeshttps://doi.org/10.1063/5.0057165openalex-snapshot
Defects in multilayer MoS2 grown by pulsed laser deposition and their impact on electronic structure
inferred← citeshttps://doi.org/10.1063/5.0124105openalex-snapshot
Comparison of contact metals evaporated onto monolayer molybdenum disulfide
inferred← citeshttps://doi.org/10.1063/5.0185604openalex-snapshot
Native point defects in 2D transition metal dichalcogenides: A perspective bridging intrinsic physical properties and device applications
inferred← citeshttps://doi.org/10.1063/5.0191536openalex-snapshot
Natural formation of linear defect structures in MoS2
inferred← citeshttps://doi.org/10.1063/5.0196668openalex-snapshot
Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition
inferred← citeshttps://doi.org/10.1063/5.0222472openalex-snapshot
Unveiling charge transport in monolayer and few-layer CoPS3/metal contact: Insight from C-AFM
inferred← citeshttps://doi.org/10.1063/5.0305488openalex-snapshot
Controllable intrinsic defect-induced electronic structure modulation in few-layer pentagonal PdPS
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