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Impact of Metal Salt Precursor on Low-Temperature Annealed Solution-Derived Ga-doped In2O3 Semiconductor for Thin-Film Transistors
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adma.200400368openalex-snapshot
Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature
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Towards See‐Through Displays: Fully Transparent Thin‐Film Transistors Driving Transparent Organic Light‐Emitting Diodes
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Flexible Inorganic/Organic Hybrid Thin‐Film Transistors Using All‐Transparent Component Materials
inferredcites →https://doi.org/10.1002/adma.200902450openalex-snapshot
Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors
inferredcites →https://doi.org/10.1016/j.jnoncrysol.2006.01.073openalex-snapshot
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
inferredcites →https://doi.org/10.1016/j.tsf.2006.12.125openalex-snapshot
Recent progress in transparent oxide semiconductors: Materials and device application
inferredcites →https://doi.org/10.1016/j.tsf.2007.03.144openalex-snapshot
ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor
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Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors
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High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors
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High Performance Solution-Processed Indium Oxide Thin-Film Transistors
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Ink-Jet-Printed Organic−Inorganic Hybrid Dielectrics for Organic Thin-Film Transistors
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors
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Inkjet printed high-mobility indium zinc tin oxide thin film transistors
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X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films
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Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
inferredcites →https://doi.org/10.1063/1.352818openalex-snapshot
Structures and properties of electron-beam-evaporated indium tin oxide films as studied by x-ray photoelectron spectroscopy and work-function measurements
inferredcites →https://doi.org/10.1063/1.97598openalex-snapshot
Effect of hydrogen plasma treatment on transparent conducting oxides
inferredcites →https://doi.org/10.1088/0022-3727/36/20/l02openalex-snapshot
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inferredcites →https://doi.org/10.1103/physrevb.54.13974openalex-snapshot
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inferredcites →https://doi.org/10.1109/jproc.2005.850305openalex-snapshot
Progress Toward Development of All-Printed RFID Tags: Materials, Processes, and Devices
inferredcites →https://doi.org/10.1126/science.1083212openalex-snapshot
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
inferredcites →https://doi.org/10.1143/apex.1.041202openalex-snapshot
Enhancement-Mode ZnO Thin-Film Transistor Grown by Metalorganic Chemical Vapor Deposition
inferredcites →https://doi.org/10.1143/jjap.45.4303openalex-snapshot
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inferredcites →https://doi.org/10.1149/1.2666588openalex-snapshot
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inferredcites →https://doi.org/10.1149/1.3119037openalex-snapshot
High Performance Solution-Processed and Lithographically Patterned Zinc–Tin Oxide Thin-Film Transistors with Good Operational Stability
inferredcites →https://doi.org/10.1149/1.3257613openalex-snapshot
High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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inferred← citeshttps://doi.org/10.1007/s42835-025-02218-1openalex-snapshot
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