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Diameter Dependence of the Wurtzite−Zinc Blende Transition in InAs Nanowires
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Outgoing claims: the papers this work cites, builds on, or argues with.
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An Empirical Potential Approach to Wurtzite–Zinc-Blende Polytypism in Group III–V Semiconductor Nanowires
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Peculiarities of axial and radial Ge–Si heterojunction formation in nanowires: Monte Carlo simulation
inferred← citeshttps://doi.org/10.1380/ejssnt.2014.18openalex-snapshot
Doping Effects on Polytypism in Semiconductor Nanowires: A First-Principles Study
inferred← citeshttps://doi.org/10.3390/coatings12020250openalex-snapshot
Phase Control Growth of InAs Nanowires by Using Bi Surfactant
inferred← citeshttps://doi.org/10.3390/nano10102064openalex-snapshot
Recent Progress on the Gold-Free Integration of Ternary III–As Antimonide Nanowires Directly on Silicon
inferred← citeshttps://doi.org/10.3390/nano11051201openalex-snapshot
Tailoring the Geometry of Bottom-Up Nanowires: Application to High Efficiency Single Photon Sources
inferred← citeshttps://doi.org/10.56053/4.1.75openalex-snapshot
Phase transition of InN films via trimethylindium flows
inferred← citeshttps://doi.org/10.70675/0b654940zeecbz4a26z8ed0z9bb4b3583b84openalex-snapshot
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inferred← citeshttps://doi.org/10.70675/6b6c480az16bdz4edbzb786z7c1d00c5228aopenalex-snapshot
Optical properties of InAs/InP nanowire heterostructures
inferred← citeshttps://doi.org/10.7567/1882-0786/aaef40openalex-snapshot
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
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Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor–liquid–solid method
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Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction
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In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors
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