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Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adma.201101192openalex-snapshot
Nanoscale Semiconductor “X” on Substrate “Y” – Processes, Devices, and Applications
inferredcites →https://doi.org/10.1016/0038-1101(94)90080-9openalex-snapshot
Subthreshold slope of long-channel, accumulation-mode p-channel SOI MOSFETs
inferredcites →https://doi.org/10.1021/nl2030322openalex-snapshot
Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
inferredcites →https://doi.org/10.1021/nl802681xopenalex-snapshot
Formation and Characterization of NixInAs/InAs Nanowire Heterostructures by Solid Source Reaction
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A diverse printed future
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GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies
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Transfer printing by kinetic control of adhesion to an elastomeric stamp
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Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate
inferredcites →https://doi.org/10.1063/1.1754846openalex-snapshot
MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION
inferredcites →https://doi.org/10.1063/1.2762279openalex-snapshot
Mobility enhancement in strained p-InGaSb quantum wells
inferredcites →https://doi.org/10.1063/1.3374447openalex-snapshot
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface
inferredcites →https://doi.org/10.1063/1.350490openalex-snapshot
Epitaxial and interface properties of InAs/InGaSb multilayered structures
inferredcites →https://doi.org/10.1063/1.3552963openalex-snapshot
Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors
inferredcites →https://doi.org/10.1063/1.3567021openalex-snapshot
Ultrathin body InAs tunneling field-effect transistors on Si substrates
inferredcites →https://doi.org/10.1073/pnas.1102650108openalex-snapshot
Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting
inferredcites →https://doi.org/10.1088/0268-1242/17/8/304openalex-snapshot
Control of structural defects in group III V N alloys grown on Si
inferredcites →https://doi.org/10.1088/0268-1242/26/7/075021openalex-snapshot
Ultra-low resistive GaSb/InAs tunnel junctions
inferredcites →https://doi.org/10.1109/55.841305openalex-snapshot
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
inferredcites →https://doi.org/10.1109/led.2011.2143689openalex-snapshot
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
inferredcites →https://doi.org/10.1109/ted.2010.2049075openalex-snapshot
Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications
inferredcites →https://doi.org/10.1109/ted.2011.2162732openalex-snapshot
Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET
inferredcites →https://doi.org/10.1557/mrs2009.136openalex-snapshot
Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
inferredcites →https://doi.org/10.1557/mrs2009.141openalex-snapshot
Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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III-V Devices and Technology for CMOS
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Parameterization of the dielectric functions of InGaSb alloys
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