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Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor
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Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage
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Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-Assembled Monolayers
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Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone
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Conduction mechanisms in sputtered Ta2O5 on Si with an interfacial SiO2 layer
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Graphene field-effect transistors
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Oxidation of silicon: the VLSI gate dielectric
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Electrical properties of the graphene/ 4H-SiC (0001) interface probed by scanning current spectroscopy
inferredcites →https://doi.org/10.1103/physrevlett.100.016602openalex-snapshot
Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
inferredcites →https://doi.org/10.1109/jproc.2010.2064151openalex-snapshot
Graphene for CMOS and Beyond CMOS Applications
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