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Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adfm.201102111openalex-snapshot
From Bulk to Monolayer MoS 2 : Evolution of Raman Scattering
inferredcites →https://doi.org/10.1002/adfm.201102913openalex-snapshot
Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
inferredcites →https://doi.org/10.1002/adma.201104798openalex-snapshot
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
inferredcites →https://doi.org/10.1002/smll.201102654openalex-snapshot
Large‐Area Vapor‐Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate
inferredcites →https://doi.org/10.1016/j.surfcoat.2003.09.047openalex-snapshot
Structure and tribological properties of WSex, WSex/TiN, WSex/TiCN and WSex/TiSiN coatings
inferredcites →https://doi.org/10.1021/jp300079dopenalex-snapshot
Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach
inferredcites →https://doi.org/10.1021/nl2018178openalex-snapshot
How Good Can Monolayer MoS2 Transistors Be?
inferredcites →https://doi.org/10.1021/nl301485qopenalex-snapshot
MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
inferredcites →https://doi.org/10.1021/nl301702ropenalex-snapshot
High-Performance Single Layered WSe 2 p-FETs with Chemically Doped Contacts
inferredcites →https://doi.org/10.1021/nn1003937openalex-snapshot
Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2
inferredcites →https://doi.org/10.1021/nn2024557openalex-snapshot
Single-Layer MoS 2 Phototransistors
inferredcites →https://doi.org/10.1021/nn202852jopenalex-snapshot
Nature of Electronic States in Atomically Thin MoS 2 Field-Effect Transistors
inferredcites →https://doi.org/10.1021/nn203715copenalex-snapshot
Integrated Circuits and Logic Operations Based on Single-Layer MoS 2
inferredcites →https://doi.org/10.1021/nn303772bopenalex-snapshot
Breakdown of High-Performance Monolayer MoS2 Transistors
inferredcites →https://doi.org/10.1038/ncomms2018openalex-snapshot
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
inferredcites →https://doi.org/10.1038/nnano.2013.31openalex-snapshot
Reply to 'Measurement of mobility in dual-gated MoS2 transistors'
inferredcites →https://doi.org/10.1063/1.1723695openalex-snapshot
High-mobility field-effect transistors based on transition metal dichalcogenides
inferredcites →https://doi.org/10.1063/1.3696045openalex-snapshot
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
inferredcites →https://doi.org/10.1073/pnas.0502848102openalex-snapshot
Two-dimensional atomic crystals
inferredcites →https://doi.org/10.1088/0957-4484/22/12/125706openalex-snapshot
Visibility of dichalcogenide nanolayers
inferredcites →https://doi.org/10.1103/physrevb.82.115452openalex-snapshot
Effect of high- κ gate dielectrics on charge transport in graphene-based field effect transistors
inferredcites →https://doi.org/10.1103/physrevb.85.115317openalex-snapshot
Phonon-limited mobility in n -type single-layer MoS 2 from first principles
inferredcites →https://doi.org/10.1103/physrevlett.108.156802openalex-snapshot
Designing Electrical Contacts to MoS 2 Monolayers: A Computational Study
inferredcites →https://doi.org/10.1103/physrevlett.98.136805openalex-snapshot
Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
inferredcites →https://doi.org/10.1109/ted.2002.804696openalex-snapshot
A computational study of thin-body, double-gate, Schottky barrier MOSFETs
inferredcites →https://doi.org/10.1126/science.1102896openalex-snapshot
Electric Field Effect in Atomically Thin Carbon Films
inferredcites →https://doi.org/10.1139/p77-052openalex-snapshot
Long wavelength optic phonons in WSe2
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Tunable SnSe 2 /WSe 2 Heterostructure Tunneling Field Effect Transistor
inferred← citeshttps://doi.org/10.1002/smll.201800032openalex-snapshot
Phase‐Engineered PtSe2‐Layered Films by a Plasma‐Assisted Selenization Process toward All PtSe2‐Based Field Effect Transistor to Highly Sensitive, Flexible, and Wide‐Spectrum Photoresponse Photodetectors
inferred← citeshttps://doi.org/10.1002/smll.201800319openalex-snapshot
Charge‐Trap Memory Based on Hybrid 0D Quantum Dot–2D WSe2 Structure
inferred← citeshttps://doi.org/10.1002/smll.201901793openalex-snapshot
Impact of H‐Doping on n‐Type TMD Channels for Low‐Temperature Band‐Like Transport
inferred← citeshttps://doi.org/10.1002/smll.201903173openalex-snapshot
High Coercivity and Magnetization in WSe2 by Codoping Co and Nb
inferred← citeshttps://doi.org/10.1002/smll.202204547openalex-snapshot
Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts
inferred← citeshttps://doi.org/10.1002/smll.202205353openalex-snapshot
Synthesis of Ultrathin Topological Insulator β‐Ag2Te and Ag2Te/WSe2‐Based High‐Performance Photodetector
inferred← citeshttps://doi.org/10.1002/smll.202206550openalex-snapshot
Electrical Contacts With 2D Materials: Current Developments and Future Prospects
inferred← citeshttps://doi.org/10.1002/smll.202207325openalex-snapshot
The Controllable Synthesis of High‐Quality Two‐Dimensional Iron Sulfide with Specific Phases
inferred← citeshttps://doi.org/10.1002/smll.202207394openalex-snapshot
A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High‐κ Er2O3 Insulator Through Thermal Evaporation
inferred← citeshttps://doi.org/10.1002/smll.202307728openalex-snapshot
High‐Performance Monolithic 3D Integrated Complementary Inverters Based on Monolayer n‐MoS2 and p‐WSe2
inferred← citeshttps://doi.org/10.1002/smll.202402857openalex-snapshot
Electronic Devices Based on Heterostructures of 2D Materials and Self‐Assembled Monolayers
inferred← citeshttps://doi.org/10.1002/smll.202408961openalex-snapshot
2D Materials‐Based Field‐Effect Transistor Biosensors for Healthcare
inferred← citeshttps://doi.org/10.1002/smtd.201700384openalex-snapshot
Interfacial Engineering for Fabricating High‐Performance Field‐Effect Transistors Based on 2D Materials
inferred← citeshttps://doi.org/10.1002/smtd.202000837openalex-snapshot
Ambipolar 2D Semiconductors and Emerging Device Applications
inferred← citeshttps://doi.org/10.1002/smtd.202502197openalex-snapshot
Hysteresis Engineering in 2D Field‐Effect Transistors
inferred← citeshttps://doi.org/10.1007/978-3-030-02171-9_6openalex-snapshot
Transition Metal Dichalcogenides Properties and Applications
inferred← citeshttps://doi.org/10.1007/978-3-319-31450-1_14openalex-snapshot
Emerging Applications of 2D TMDCs
inferred← citeshttps://doi.org/10.1007/978-4-431-56912-1_9openalex-snapshot
Growth and Electronic and Optoelectronic Applications of Surface Oxides on Atomically Thin WSe2
inferred← citeshttps://doi.org/10.1007/978-981-13-9045-6_10openalex-snapshot
Electronic Devices Based on Transition Metal Dichalcogenides
inferred← citeshttps://doi.org/10.1007/978-981-19-7963-7_7openalex-snapshot
Layered Chalcogenides: Evolution from Bulk to Nano-Dimension for Renewable Energy Perspectives
inferred← citeshttps://doi.org/10.1007/978-981-96-0247-6_8openalex-snapshot
Applications of TMDs Materials
inferred← citeshttps://doi.org/10.1007/s00339-022-05862-wopenalex-snapshot
Increasing of the ON-state current of 5.1 nm MoTe2 in-plane Schottky barrier field-effect transistors by O-passivation and W-doping
inferred← citeshttps://doi.org/10.1007/s00339-025-08590-zopenalex-snapshot
Interfacial properties of monolayer PtSe2 FETs: A comparative study of traditional metal and semimetal electrodes
inferred← citeshttps://doi.org/10.1007/s00604-018-3005-1openalex-snapshot
Two-dimensional nanomaterial based sensors for heavy metal ions
inferred← citeshttps://doi.org/10.1007/s10765-023-03170-wopenalex-snapshot
First-Principles Investigation on Phonon Mode Conversion of Thermal Transport in Silicene Under Tensile Strain
inferred← citeshttps://doi.org/10.1007/s10825-013-0531-2openalex-snapshot
Atomistic modeling of semiconductor interfaces
inferred← citeshttps://doi.org/10.1007/s10825-017-0978-7openalex-snapshot
Simulation of thin-TFETs using transition metal dichalcogenides: effect of material parameters, gate dielectric on electrostatic device performance
inferred← citeshttps://doi.org/10.1007/s10825-018-1227-4openalex-snapshot
Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors
inferred← citeshttps://doi.org/10.1007/s10825-023-02071-3openalex-snapshot
Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation
inferred← citeshttps://doi.org/10.1007/s10853-018-2815-1openalex-snapshot
Magnetic semiconducting and strain-induced semiconducting–metallic transition in Cu-doped single-layer WSe2
inferred← citeshttps://doi.org/10.1007/s10854-021-06274-xopenalex-snapshot
High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications
inferred← citeshttps://doi.org/10.1007/s11432-019-2651-xopenalex-snapshot
Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides
inferred← citeshttps://doi.org/10.1007/s11432-024-4032-6openalex-snapshot
Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping
inferred← citeshttps://doi.org/10.1007/s11432-024-4033-8openalex-snapshot
Two-dimensional materials for future information technology: status and prospects
inferred← citeshttps://doi.org/10.1007/s11432-025-4954-6openalex-snapshot
Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation
inferred← citeshttps://doi.org/10.1007/s11467-017-0652-3openalex-snapshot
Quantum dot behavior in transition metal dichalcogenides nanostructures
inferred← citeshttps://doi.org/10.1007/s11664-016-5078-0openalex-snapshot
Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors
inferred← citeshttps://doi.org/10.1007/s11664-019-07506-xopenalex-snapshot
Thickness Dependence of Optoelectronic Properties of Molybdenum Diselenide-Based Nanodevices
inferred← citeshttps://doi.org/10.1007/s11664-020-08087-wopenalex-snapshot
Enhancement of WSe2 FET Performance Using Low-Temperature Annealing
inferred← citeshttps://doi.org/10.1007/s11664-023-10245-9openalex-snapshot
A Thrifty Liquid-Phase Exfoliation (LPE) of MoSe2 and WSe2 Nanosheets as Channel Materials for FET Application
inferred← citeshttps://doi.org/10.1007/s12274-015-0895-7openalex-snapshot
Remarkable anisotropic phonon response in uniaxially strained few-layer black phosphorus
inferred← citeshttps://doi.org/10.1007/s12274-015-0918-4openalex-snapshot
A progressive route for tailoring electrical transport in MoS2
inferred← citeshttps://doi.org/10.1007/s12274-016-1386-1openalex-snapshot
Significantly enhanced optoelectronic performance of tungsten diselenide phototransistor via surface functionalization
inferred← citeshttps://doi.org/10.1007/s12274-017-1460-3openalex-snapshot
Tungsten diselenide nanoplates as advanced lithium/sodium ion electrode materials with different storage mechanisms
inferred← citeshttps://doi.org/10.1007/s12274-017-1681-5openalex-snapshot
High-performance multilayer WSe2 field-effect transistors with carrier type control
inferred← citeshttps://doi.org/10.1007/s12274-017-1755-4openalex-snapshot
Effects of dielectric stoichiometry on the photoluminescence properties of encapsulated WSe2 monolayers
inferred← citeshttps://doi.org/10.1007/s12274-018-2243-1openalex-snapshot
Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer
inferred← citeshttps://doi.org/10.1007/s12274-019-2557-7openalex-snapshot
Electronic structure of exfoliated millimeter-sized monolayer WSe2 on silicon wafer
inferred← citeshttps://doi.org/10.1007/s12274-020-2893-7openalex-snapshot
Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate
inferred← citeshttps://doi.org/10.1007/s12274-020-3275-xopenalex-snapshot
Controlling phase transition in WSe2 towards ideal n-type transistor
inferred← citeshttps://doi.org/10.1007/s12274-021-3670-yopenalex-snapshot
Field-effect at electrical contacts to two-dimensional materials
inferred← citeshttps://doi.org/10.1007/s12274-022-4317-3openalex-snapshot
Highly in-plane anisotropy of thermal transport in suspended ternary chalcogenide Ta2NiS5
inferred← citeshttps://doi.org/10.1007/s12274-023-6128-6openalex-snapshot
Van der Waals contacted WSe2 ambipolar transistor for in-sensor computing
inferred← citeshttps://doi.org/10.1007/s12274-023-6235-8openalex-snapshot
Regulating the conductance of tungsten diselenide by oxygen plasma and improving its electrical stability by encapsulation
inferred← citeshttps://doi.org/10.1007/s12598-021-01899-7openalex-snapshot
UV‐activated single‐layer WSe 2 for highly sensitive NO 2 detection
inferred← citeshttps://doi.org/10.1007/s40820-025-01898-8openalex-snapshot
Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution
inferred← citeshttps://doi.org/10.1007/s42247-021-00219-0openalex-snapshot
Synthesis of lateral heterostructure of 2D materials for optoelectronic devices: challenges and opportunities
inferred← citeshttps://doi.org/10.1007/s43207-025-00541-xopenalex-snapshot
Tunable electronic and optical properties of monolayer β-MTe (M = Si, Sn) under mechanical strain and electric fields
inferred← citeshttps://doi.org/10.1007/s43207-025-00576-0openalex-snapshot
Impact of intrinsic trap states on the electrical and optoelectronic behavior of ReS2 and ReSe2
inferred← citeshttps://doi.org/10.1016/b978-0-08-102577-2.00009-9openalex-snapshot
2D Materials for Field-Effect Transistor–Based Biosensors
inferred← citeshttps://doi.org/10.1016/b978-0-12-803581-8.03733-4openalex-snapshot
Conducting Polymer Solution and Gel Processing
inferred← citeshttps://doi.org/10.1016/b978-0-12-821505-0.00005-8openalex-snapshot
2D materials for flexible electronics
inferred← citeshttps://doi.org/10.1016/b978-0-323-85457-3.00001-3openalex-snapshot
Functionalized 2D materials
inferred← citeshttps://doi.org/10.1016/b978-0-443-34203-5.00006-1openalex-snapshot
Characteristic Derivation of ML WSe₂ GAA NS FETs With Various Source/Drain Metal Contacts Using a Coupled Material–Device Simulation Technique
inferred← citeshttps://doi.org/10.1016/bs.semsem.2016.03.001openalex-snapshot
Advances in 2D Materials for Electronic Devices
inferred← citeshttps://doi.org/10.1016/j.apmt.2015.09.001openalex-snapshot
Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals
inferred← citeshttps://doi.org/10.1016/j.apsusc.2016.10.088openalex-snapshot
First-principles study of stability, electronic structure and magnetic properties of Be 2 C nanoribbons
inferred← citeshttps://doi.org/10.1016/j.apsusc.2017.07.060openalex-snapshot
Anisotropic growth mechanism of tungsten diselenide domains using chemical vapor deposition method
inferred← citeshttps://doi.org/10.1016/j.apsusc.2017.10.172openalex-snapshot
DFT investigation on two-dimensional GeS/WS2 van der Waals heterostructure for direct Z-scheme photocatalytic overall water splitting
inferred← citeshttps://doi.org/10.1016/j.apsusc.2018.04.117openalex-snapshot
Terahertz surface emission from layered semiconductor WSe2
inferred← citeshttps://doi.org/10.1016/j.apsusc.2019.06.192openalex-snapshot
Nucleation engineering for atomic layer deposition of uniform sub-10 nm high-K dielectrics on MoTe2
inferred← citeshttps://doi.org/10.1016/j.apsusc.2020.146701openalex-snapshot
Design of MXene contacts for high-performance WS2 transistors
inferred← citeshttps://doi.org/10.1016/j.apsusc.2021.149762openalex-snapshot
Nanotribology of transition metal dichalcogenide flakes deposited by chemical vapour deposition: The influence of chemical composition and sliding speed on nanoscale friction of monolayers
inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.153240openalex-snapshot
Photoexcitation and radiation regulation mechanism of Ag anchoring WSe2 heterojunction with plasma coupling effect
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