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Hydrogen-atom-mediated electrochemistry

https://doi.org/10.1038/ncomms3766
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping
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Behavior of hydrogen in wide band gap oxides
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Electron trapping and hydrogen atoms in oxide glasses
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Behaviour of hydrogen in wide band gap oxides
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First-principles calculations for charged states of hydrogen atoms in SiO2
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Photochemical and Photoelectrochemical Reduction of CO 2

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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inferred← citeshttps://doi.org/10.1039/c5ee02863aopenalex-snapshot
Light-guided electrodeposition of non-noble catalyst patterns for photoelectrochemical hydrogen evolution
inferred← citeshttps://doi.org/10.1039/c8en00727fopenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/d0en00182aopenalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.5055302openalex-snapshot
Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
inferred← citeshttps://doi.org/10.1073/pnas.2005122117openalex-snapshot
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inferred← citeshttps://doi.org/10.1149/2.0061702jesopenalex-snapshot
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КИНЕТИКА КАТОДНОГО ПРОЦЕССА ВЫДЕЛЕНИЯ ВОДОРОДА НА ДИСИЛИЦИДЕ КОБАЛЬТА, АНОДНО ОКИСЛЕННОМ В 0.5 М H2SO4 ПРИ ВЫСОКИХ ПОТЕНЦИАЛАХ
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inferred← citeshttps://doi.org/10.3390/catal11080929openalex-snapshot
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Etude des défauts héréditaires atypiques de la réparation de l'ADN
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.